Model No: W29N01HVSINA
Winbond Electronics W29N01HVSINA
Manufacturer: Winbond Electronics
SEMICON NO.: W29N01HVSINA
Package: 48-TSOP
Stock: In stock
Description: FLASH - NAND (SLC) Mmemory IC 1Gbit 25 ns
SEMICON NO.: W29N01HVSINA
Package: 48-TSOP
Stock: In stock
Description: FLASH - NAND (SLC) Mmemory IC 1Gbit 25 ns
Quantity :
| Mfr | Winbond Electronics |
| Device Type | NAND Flash Memory (SLC) |
| Memory Size / Density | 1 Gb (128 MB) |
| Memory Organization | 128M x 8 |
| Memory Architecture | SLC (Single-Level Cell) |
| Max Clock Frequency | 40 MHz |
| Access Time (Random) | 25 µs (Max) |
| Page Program Time (Typ) | 250 µs (0.25 ms) |
| Block Erase Time (Typ) | 2 ms |
| Data Retention | 10 years (Min) |
| Supply Voltage (Vcc) | 2.7 V to 3.6 V |
| Supply Current (Active) | 35 mA (Max) |
| Interface Type | Parallel |
| Data Bus Width | 8-bit |
| Operating Temperature | -40°C to +85°C |
| Package | 48-TSOP |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
W29N01HVSINA NAND flash memory
The W29N01HVSINA is a 1Gbit (128M×8) SLC NAND flash memory from Winbond Electronics, designed for high‑density, cost‑effective non‑volatile data storage in embedded systems and consumer electronics. Built on single‑level cell (SLC) technology, it delivers fast access, reliable retention, and robust endurance with a standard parallel interface and 48‑TSOP‑I package 25ns random access time, 250μs typical page program time, and 2ms typical block erase time, balancing performance and power efficiency. With a uniform 2KB+64B page size and symmetrical block architecture, it supports straightforward system integration and efficient memory management. The memory operates reliably across -40°C to +85°C, complies with RoHS and halogen‑free standards, and includes 1‑bit ECC support to ensure data integrity in high‑noise environments.
It provides 1Gbit SLC NAND storage with 128M×8 organization, offering high density and low cost for mass data storage applications. The 25ns fast random read, 250μs page program, and 2ms block erase times enable high‑speed data operations suitable for boot code, firmware, and data logging. A wide 2.7V–3.6V operating voltage range supports battery‑powered and industrial systems, while the 48‑pin TSOP‑I package ensures compatibility with standard PCB layouts and high‑volume production. Integrated 1‑bit ECC and robust block protection enhance data reliability, and the SLC architecture delivers superior endurance (up to 100,000 program/erase cycles) and 10‑year data retention. It is Pb‑free, RoHS‑compliant, and halogen‑free, meeting global environmental regulations for consumer and industrial products.
Alternative NAND Memory Ics
1. Micron MT29F1G08ABAEAWP: 1Gbit SLC NAND flash with 25ns access time, 48‑pin TSOP, and 2.7V–3.6V operation for high‑volume consumer and industrial storage.
2. Samsung K9F1G08U0E: 1Gbit SLC NAND memory with 25μs read time, 48‑pin TSOP‑I, and 1‑bit ECC support for embedded and automotive applications.
3. Toshiba TH58NVG1S3ETA00: 1Gbit SLC NAND flash with 2.7V–3.6V supply, 48‑pin TSOP, and fast program/erase times for cost‑effective data storage.
The W29N01HVSINA is a 1Gbit (128M×8) SLC NAND flash memory from Winbond Electronics, designed for high‑density, cost‑effective non‑volatile data storage in embedded systems and consumer electronics. Built on single‑level cell (SLC) technology, it delivers fast access, reliable retention, and robust endurance with a standard parallel interface and 48‑TSOP‑I package 25ns random access time, 250μs typical page program time, and 2ms typical block erase time, balancing performance and power efficiency. With a uniform 2KB+64B page size and symmetrical block architecture, it supports straightforward system integration and efficient memory management. The memory operates reliably across -40°C to +85°C, complies with RoHS and halogen‑free standards, and includes 1‑bit ECC support to ensure data integrity in high‑noise environments.
It provides 1Gbit SLC NAND storage with 128M×8 organization, offering high density and low cost for mass data storage applications. The 25ns fast random read, 250μs page program, and 2ms block erase times enable high‑speed data operations suitable for boot code, firmware, and data logging. A wide 2.7V–3.6V operating voltage range supports battery‑powered and industrial systems, while the 48‑pin TSOP‑I package ensures compatibility with standard PCB layouts and high‑volume production. Integrated 1‑bit ECC and robust block protection enhance data reliability, and the SLC architecture delivers superior endurance (up to 100,000 program/erase cycles) and 10‑year data retention. It is Pb‑free, RoHS‑compliant, and halogen‑free, meeting global environmental regulations for consumer and industrial products.
Alternative NAND Memory Ics
1. Micron MT29F1G08ABAEAWP: 1Gbit SLC NAND flash with 25ns access time, 48‑pin TSOP, and 2.7V–3.6V operation for high‑volume consumer and industrial storage.
2. Samsung K9F1G08U0E: 1Gbit SLC NAND memory with 25μs read time, 48‑pin TSOP‑I, and 1‑bit ECC support for embedded and automotive applications.
3. Toshiba TH58NVG1S3ETA00: 1Gbit SLC NAND flash with 2.7V–3.6V supply, 48‑pin TSOP, and fast program/erase times for cost‑effective data storage.
