Model No: MT29F4G08ABADAWP-IT:D
Micron Technology Inc. MT29F4G08ABADAWP-IT:D
Manufacturer: Micron Technology Inc.
SEMICON NO.: MT29F4G08ABADAWP-IT:D
Package: 48-TSOP
Stock: In stock
Description: IC NAND Flash Memory 4 Gbit 35 mA
SEMICON NO.: MT29F4G08ABADAWP-IT:D
Package: 48-TSOP
Stock: In stock
Description: IC NAND Flash Memory 4 Gbit 35 mA
Quantity :
| Mfr | Micron Technology Inc. |
| Device Type | NAND Flash Memory (Parallel) |
| Memory Size / Density | 4 Gbit (512 MByte) |
| Memory Organization | 512M x 8-bit |
| Interface Type | Parallel |
| Maximum Access Time (tRC/tWC) | 25 ns (maximum) |
| Data Retention | 10 years (minimum) |
| Supply Voltage (Vcc) | 2.7 V to 3.6 V |
| Active Supply Current (Max) | 35 mA |
| Standby Current (Max) | 100 µA |
| Operating Temperature | -40°C to +85°C |
| Package | 48-TSOP |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
MT29F4G08ABADAWP-IT:D Micron 4Gb SLC NAND Flash Memory
MT29F4G08ABADAWP-IT:D is a 4-gigabit single-level cell NAND flash memory from Micron, organized as 512MB ×8-bit data width and housed in standard 48-pin TSOPI surface-mount packaging shipped via tape-and-reel, RoHS compliant and MSL3 rated for stable automated SMT assembly. This industrial-grade device supports an operating temperature range of -40°C to +85°C, powered by a single 3.3V core supply voltage, following JEDEC standard NAND command and address protocols with page size of 2048 bytes plus spare 64-byte ECC storage area for error correction. Designed for long-lifecycle embedded storage scenarios, it delivers reliable non-volatile data retention up to 10 years at rated temperature and maintains consistent program/erase cycling performance far beyond consumer MLC flash variants for mission-critical firmware and log storage systems.
Micron SLC NAND flash Applications
It serves as dependable non-volatile storage for industrial PLC firmware banks, rugged data logging equipment, medical device program memory, automotive aftermarket control modules, network switch boot flash, portable measurement instrument storage, and remote IoT gateway firmware repositories, where high endurance, wide temperature tolerance and long data retention are mandatory requirements unavailable from low-cost multi-level cell flash memory alternatives.
Alternative NAND Flash chips
● MT29F4G08ABADAWP:A (Micron): Pin-compatible commercial temperature variant (0°C~70°C) with identical density and timing specs for indoor cost-sensitive substitution.
● K9F4G08U0B-SCB0 (Samsung): 4Gb 8-bit SLC NAND TSOP48 flash with matching page structure and cycle rating as cross-brand second-source replacement.
● W29N04GVTAA (Winbond): Cost-effective 4Gb SLC parallel NAND memory with compatible controller interface for mass production hardware redesign.
MT29F4G08ABADAWP-IT:D is a 4-gigabit single-level cell NAND flash memory from Micron, organized as 512MB ×8-bit data width and housed in standard 48-pin TSOPI surface-mount packaging shipped via tape-and-reel, RoHS compliant and MSL3 rated for stable automated SMT assembly. This industrial-grade device supports an operating temperature range of -40°C to +85°C, powered by a single 3.3V core supply voltage, following JEDEC standard NAND command and address protocols with page size of 2048 bytes plus spare 64-byte ECC storage area for error correction. Designed for long-lifecycle embedded storage scenarios, it delivers reliable non-volatile data retention up to 10 years at rated temperature and maintains consistent program/erase cycling performance far beyond consumer MLC flash variants for mission-critical firmware and log storage systems.
Micron SLC NAND flash Applications
It serves as dependable non-volatile storage for industrial PLC firmware banks, rugged data logging equipment, medical device program memory, automotive aftermarket control modules, network switch boot flash, portable measurement instrument storage, and remote IoT gateway firmware repositories, where high endurance, wide temperature tolerance and long data retention are mandatory requirements unavailable from low-cost multi-level cell flash memory alternatives.
Alternative NAND Flash chips
● MT29F4G08ABADAWP:A (Micron): Pin-compatible commercial temperature variant (0°C~70°C) with identical density and timing specs for indoor cost-sensitive substitution.
● K9F4G08U0B-SCB0 (Samsung): 4Gb 8-bit SLC NAND TSOP48 flash with matching page structure and cycle rating as cross-brand second-source replacement.
● W29N04GVTAA (Winbond): Cost-effective 4Gb SLC parallel NAND memory with compatible controller interface for mass production hardware redesign.
