Model No: TC58NVG2S0HBAI4
Kioxia America Inc. TC58NVG2S0HBAI4
Manufacturer: Kioxia America Inc.
SEMICON NO.: TC58NVG2S0HBAI4
Package: 63-TFBGA
Stock: In stock
Description: SLC NAND Memory IC 4Gbit Parallel 25 ns
SEMICON NO.: TC58NVG2S0HBAI4
Package: 63-TFBGA
Stock: In stock
Description: SLC NAND Memory IC 4Gbit Parallel 25 ns
Quantity :
| Mfr | Kioxia America Inc. |
| Device Type | SLC NAND Flash Memory |
| Memory Density / Capacity | 4 Gbit |
| I/O Bus Width | 8-bit |
| Interface Type | Parallel |
| Serial Access (Cycle) | 25 ns (min) |
| Program Time (Typical) | 0.3 ms |
| Block Erase Time (Typical) | 2.5 ms |
| Supply Voltage (Vcc) | 2.7 V to 3.6 V |
| Standby Current (Typ) | 50 µA |
| Operating Temperature | -40°C to +85°C |
| Package | 63-TFBGA |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
TC58NVG2S0HBAI4 SLC NAND Flash memory
The TC58NVG2S0HBAI4 is a 4Gbit (512M x 8) SLC NAND Flash memory device from KIOXIA Corporation, fabricated on advanced 24nm process technology and housed in a compact 63-ball FBGA package measuring 9mm x 11mm with a 0.8mm pin pitch . As a single-level cell architecture, it delivers superior reliability, fast read and program speeds, and extended endurance compared to multi-level cell alternatives, making it the preferred choice for code storage, boot memory, and data logging in embedded systems.
KIOXIA Memory Performance Characteristics and Applications
Operating from a 2.7V to 3.6V supply voltage, this device provides a typical 25 µs first access time and a fast 25 ns serial cycle access time . The page architecture consists of (4096+256) bytes per page with (256K+16K) bytes per block, enabling efficient read-modify-write operations. Programming time is typically 0.3 ms per page, while block erasing is completed in just 2.5 ms, ensuring rapid data throughput for performance-critical applications . The device supports the standard 8-bit I/O interface commonly used in NAND Flash memory systems.
This memory device is exceptionally well-suited for embedded systems requiring reliable, non-volatile code storage including industrial controllers, automotive electronics, medical devices, and networking equipment . It serves as the primary boot memory in many ARM-based processors and microcontrollers, providing fast power-on initialization. Its high endurance and industrial temperature range also make it ideal for data logging applications in harsh environments, while its simplicity and proven reliability make it a preferred choice over more complex managed NAND solutions for many mission-critical systems.
Alternative Flash memory models
For design flexibility, several pin-to-pin and functional alternatives are available:
● TC58NVG2S0FBAI4 is a functionally equivalent alternative from KIOXIA with identical specifications, differing primarily in manufacturing revision.
● TC58BVG2S0HBAI4 is a drop-in compatible alternative with the same 3.3V operation and FBGA-63 package, also from KIOXIA.
● IS34ML04G168-BLI from ISSI is a comparable 4Gbit SLC NAND in a VFBGA-63 package with 3.3V supply and industrial temperature grade.
● S34ML04G300BHI100 from Cypress (now Infineon) provides identical BGA-63 packaging, 3.3V operation, and 25ns speed rating, serving as a robust second-source option.
● TH58NVG2S3HBAI4 is another KIOXIA variant offering similar 4Gbit SLC NAND functionality with comparable package dimensions, suitable for designs requiring a compatible memory footprint.
The TC58NVG2S0HBAI4 is a 4Gbit (512M x 8) SLC NAND Flash memory device from KIOXIA Corporation, fabricated on advanced 24nm process technology and housed in a compact 63-ball FBGA package measuring 9mm x 11mm with a 0.8mm pin pitch . As a single-level cell architecture, it delivers superior reliability, fast read and program speeds, and extended endurance compared to multi-level cell alternatives, making it the preferred choice for code storage, boot memory, and data logging in embedded systems.
KIOXIA Memory Performance Characteristics and Applications
Operating from a 2.7V to 3.6V supply voltage, this device provides a typical 25 µs first access time and a fast 25 ns serial cycle access time . The page architecture consists of (4096+256) bytes per page with (256K+16K) bytes per block, enabling efficient read-modify-write operations. Programming time is typically 0.3 ms per page, while block erasing is completed in just 2.5 ms, ensuring rapid data throughput for performance-critical applications . The device supports the standard 8-bit I/O interface commonly used in NAND Flash memory systems.
This memory device is exceptionally well-suited for embedded systems requiring reliable, non-volatile code storage including industrial controllers, automotive electronics, medical devices, and networking equipment . It serves as the primary boot memory in many ARM-based processors and microcontrollers, providing fast power-on initialization. Its high endurance and industrial temperature range also make it ideal for data logging applications in harsh environments, while its simplicity and proven reliability make it a preferred choice over more complex managed NAND solutions for many mission-critical systems.
Alternative Flash memory models
For design flexibility, several pin-to-pin and functional alternatives are available:
● TC58NVG2S0FBAI4 is a functionally equivalent alternative from KIOXIA with identical specifications, differing primarily in manufacturing revision.
● TC58BVG2S0HBAI4 is a drop-in compatible alternative with the same 3.3V operation and FBGA-63 package, also from KIOXIA.
● IS34ML04G168-BLI from ISSI is a comparable 4Gbit SLC NAND in a VFBGA-63 package with 3.3V supply and industrial temperature grade.
● S34ML04G300BHI100 from Cypress (now Infineon) provides identical BGA-63 packaging, 3.3V operation, and 25ns speed rating, serving as a robust second-source option.
● TH58NVG2S3HBAI4 is another KIOXIA variant offering similar 4Gbit SLC NAND functionality with comparable package dimensions, suitable for designs requiring a compatible memory footprint.
