Model No: H5AG46DXNDX117N
SK Hynix H5AG46DXNDX117N
Manufacturer: SK Hynix
SEMICON NO.: H5AG46DXNDX117N
Package: 96-FBGA
Stock: In stock
Description: DDR4 SDRAM 16 Gbit 1.6 GHz
SEMICON NO.: H5AG46DXNDX117N
Package: 96-FBGA
Stock: In stock
Description: DDR4 SDRAM 16 Gbit 1.6 GHz
Quantity :
| Mfr | SK Hynix |
| Device Type | DDR4 SDRAM (Memory IC) |
| Memory Size / Density | 16 Gbit (2 GByte) |
| Memory Organization | 1G x 16 (1 Gig Words × 16 bits) |
| Memory Format | DRAM |
| Interface Type | Parallel (DDR4 architecture) |
| Max Clock Frequency (fc) | 1.6 GHz |
| Supply Voltage (VDD/VDDQ) | 1.14 V to 1.26 V |
| Supply Current (Operating) | 72 mA (typical) |
| Refresh Current | 3.5 mA (typical) |
| Operating Temperature | 0°C to +95°C |
| Package | 96-FBGA |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
H5AG46DXNDX117N DDR4 SDRAM
H5AG46DXNDX117N is a 16Gb x16 DDR4 synchronous DRAM manufactured by SK Hynix, built with advanced CMOS memory process and packaged in compact 96-ball FBGA surface-mount tray housing, fully lead-free, halogen-free and RoHS compliant for mass SMT assembly, designed as high-density standalone main memory IC rather than assembled memory module, delivering 3200 Mbps peak data bandwidth at 1.6 GHz clock frequency with standard industrial-grade temperature tolerance and stable synchronous double-data-rate operation for embedded computing hardware that requires discrete high-speed DRAM without standard DIMM footprint constraints.
This memory IC adopts unified 1.2V nominal VDD/VDDQ operating voltage with allowable 1.14V to 1.26V tolerance, features 16 independent internal memory banks, 8-bit prefetch architecture, differential CK clock and differential DQS data strobe signals to suppress signal noise, supports programmable burst length of 4 or 8 with interleaved burst ordering, operates stably within 0°C to 95°C ambient temperature with 7.8μs regular refresh cycle, consumes typical 72mA active operating current and maintains low standby power draw, integrates on-chip DLL to align data and strobe timing with clock edges, and has absolute maximum voltage ratings protecting against transient power surges during hot-plug and power cycling events.
Alternative SDRAMs
● H5AG44DXNDX116: SK Hynix original 8Gb x16 FBGA-96 DDR4 chip with identical electrical voltage and frequency specs, cost-effective downgrade replacement for low-data-throughput IoT embedded hardware with smaller memory capacity requirements.
● H5AG48DXNDX116: SK Hynix same-form-factor 32Gb x16 DDR4 memory IC sharing 96-ball FBGA pinout and 1.2V operating voltage, direct pin-to-pin upgrade variant for image-intensive devices needing doubled storage bandwidth.
● MT60B256G32-32: Micron 16Gb x16 FBGA DDR4 SDRAM with matching 3200Mbps transfer rate and temperature range, universal aftermarket substitute compatible with most industrial embedded SoC memory interfaces.
H5AG46DXNDX117N is a 16Gb x16 DDR4 synchronous DRAM manufactured by SK Hynix, built with advanced CMOS memory process and packaged in compact 96-ball FBGA surface-mount tray housing, fully lead-free, halogen-free and RoHS compliant for mass SMT assembly, designed as high-density standalone main memory IC rather than assembled memory module, delivering 3200 Mbps peak data bandwidth at 1.6 GHz clock frequency with standard industrial-grade temperature tolerance and stable synchronous double-data-rate operation for embedded computing hardware that requires discrete high-speed DRAM without standard DIMM footprint constraints.
This memory IC adopts unified 1.2V nominal VDD/VDDQ operating voltage with allowable 1.14V to 1.26V tolerance, features 16 independent internal memory banks, 8-bit prefetch architecture, differential CK clock and differential DQS data strobe signals to suppress signal noise, supports programmable burst length of 4 or 8 with interleaved burst ordering, operates stably within 0°C to 95°C ambient temperature with 7.8μs regular refresh cycle, consumes typical 72mA active operating current and maintains low standby power draw, integrates on-chip DLL to align data and strobe timing with clock edges, and has absolute maximum voltage ratings protecting against transient power surges during hot-plug and power cycling events.
Alternative SDRAMs
● H5AG44DXNDX116: SK Hynix original 8Gb x16 FBGA-96 DDR4 chip with identical electrical voltage and frequency specs, cost-effective downgrade replacement for low-data-throughput IoT embedded hardware with smaller memory capacity requirements.
● H5AG48DXNDX116: SK Hynix same-form-factor 32Gb x16 DDR4 memory IC sharing 96-ball FBGA pinout and 1.2V operating voltage, direct pin-to-pin upgrade variant for image-intensive devices needing doubled storage bandwidth.
● MT60B256G32-32: Micron 16Gb x16 FBGA DDR4 SDRAM with matching 3200Mbps transfer rate and temperature range, universal aftermarket substitute compatible with most industrial embedded SoC memory interfaces.
