CXMT Kicks Off HBM3E Risk Production

2026-09-01

Chinese DRAM leader CXMT has officially kicked off risk production of HBM3E high-bandwidth memory, marking the first time a domestic storage vendor has reached the mass-production threshold for a current-generation HBM product and taking a critical step on the high-end memory track long dominated by Samsung, SK Hynix, and Micron.

Risk Production Underway

Industry sources indicate that CXMT's HBM3E output remains very limited at present, placing it in the early phase of risk production. However, drawing on its proven track record of rapidly transitioning from risk production to mass manufacturing, the market broadly expects HBM3E volume ramp-up within weeks. While specific specifications have not yet been disclosed, under JEDEC standards HBM3E adopts a 1024-bit interface with per-pin data rates ranging from 9.2 Gbps to 12.4 Gbps, delivering aggregate bandwidth of up to 1.2 TB/s in typical configurations. An 8-high stack offers 24 GB per module, while a 12-high stack reaches 36 GB—sufficient to support AI accelerators and high-performance computing workloads.

Aggressive Capacity Expansion

As HBM3E risk production advances, CXMT is accelerating its overall DRAM capacity build-out. The company currently operates three 12-inch wafer fabs in Hefei and Beijing with combined monthly output of roughly 300,000 wafers. Under the current plan, DRAM manufacturing capacity will rise to 350,000 wafers per month by year-end, already closing in on Micron's comparable level of approximately 375,000 wafers.

More notably, CXMT has demonstrated remarkable efficiency in cleanroom construction—completing a new facility in roughly 12 months versus the two years typically required by international peers—providing a critical boost to subsequent capacity ramp and technology iteration.

Technology Gap and Domestic Substitution

It should be noted that CXMT's HBM3E still trails overseas leaders by roughly two generations: while CXMT is just entering HBM3E risk production, Samsung and SK Hynix are already transitioning toward HBM4E. Nevertheless, this breakthrough carries significant weight for the domestic supply chain. It not only helps alleviate China's reliance on imported HBM for AI computing infrastructure, but also opens a pathway for CXMT to upgrade from commodity DRAM into higher-margin products.

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