Infineon Technologies IRFP90N20DPBF

Manufacturer: Infineon Technologies
SEMICON NO.: IRFP90N20DPBF
Package: TO-247AC
Stock: In stock
Description: N-Ch Power MOSFET 200V 94A 580W

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Mfr	Infineon Technologies
Device Type	N-Channel Power MOSFET
Technology	HEXFET® Power MOSFET / MOSFET (Metal Oxide)
Polarity	N-Channel
Drain-Source Voltage	200 V
Continuous Drain Current	94 A
Gate-Source Voltage	±30 V
Power Dissipation	580 W
Drain-Source On-Resistance	23 mΩ (Max)
Gate-Source Threshold Voltage	5 V (Max)
Input Capacitance	6040 pF (Max)
Output Capacitance	8350 pF (Typ)
Drive Voltage	10 V
Operating Temperature	-55°C to +175°C
Package	TO-247AC
Mounting Type	Through Hole
Compliance	RoHS Compliant

IRFP90N20DPBF is a high‑power N‑channel HEXFET power MOSFET manufactured by Infineon, providing 200 V drain‑source breakdown voltage and 94 A continuous drain‑current capability for heavy‑duty power‑switching circuits. Packaged in the through‑hole TO‑247AC three‑pin housing with lead‑free construction, this silicon power transistor features ultra‑low 23 mΩ on‑state resistance, optimized gate charge parameters for high‑frequency operation, full avalanche ruggedness and a wide operating junction temperature range of ‑55 °C to 175 °C, delivering low conduction losses and reliable switching performance for industrial inverters, DC‑DC converters and motor‑drive power systems
Key Features
● Ultra‑low maximum Rds(on) of 0.023 Ω measured at 10 V gate drive and 56 A drain‑current to minimize conduction heat loss.
● Optimized low gate‑to‑drain charge reduces switching losses, making this device well‑suited for high‑frequency DC‑DC converter topologies.
● Fully characterized unclamped inductive switching (UIS) avalanche energy rating delivers strong short‑circuit transient‑withstand capability.
● Maximum power dissipation reaches 580 W with adequate external heat‑sink cooling.
● Wide junction temperature operating range from ‑55 °C up to 175 °C, enabling stable operation inside harsh industrial environments.
FAQ
Q: What gate drive voltage is recommended for IRFP90N20DPBF?
A: A 10 V gate‑source voltage is recommended to guarantee low on‑resistance and full turn‑on of the MOSFET channel.
Q: Is an external heat sink mandatory during operation?
A: Yes, a properly sized heat sink is required for sustained high‑current work to avoid thermal overstress.
Alternative N‑channel transistor Models
1. IRFP80N20DPBF: TO‑247AC N‑channel MOSFET with identical 200 V voltage rating and 80 A drain‑current capacity, a cost‑effective downgrade option for projects with lower current demand.
2. FDP90N20: 200 V, 90 A N‑channel power MOSFET with comparable on‑resistance specifications, offered by a different supplier as a functional cross‑reference replacement.
3. IRFP460PBF: 500 V high‑voltage power MOSFET in TO‑247AC package, selected when circuit designs require higher drain‑source voltage withstand capability.