Model No: STW70N60DM2
STMicroelectronics STW70N60DM2
Manufacturer: STMicroelectronics
SEMICON NO.: STW70N60DM2
Package: TO-247-3
Stock: In stock
Description: MOSFET N-channel 600V 66A
SEMICON NO.: STW70N60DM2
Package: TO-247-3
Stock: In stock
Description: MOSFET N-channel 600V 66A
Quantity :
| Mfr | STMicroelectronics |
| Device Type | N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 600V |
| Gate-Source Voltage (VGS) | ±25V |
| Continuous Drain Current (ID) | 66A @ 25°C, 42A @ TC = 100°C |
| Pulsed Drain Current (IDM) | 264A |
| Drain-Source On-Resistance (RDS(on)) | 37 mΩ (Typ), 42 mΩ (Max) |
| Drive Voltage | 10 V |
| Operating Temperature | -55°C to +150°C |
| Package | TO-247-3 |
| Mounting Type | Through Hole |
| Compliance | RoHS Compliant |
STW70N60DM2 is a high‑voltage N‑channel MDmesh DM2 power MOSFET manufactured by STMicroelectronics, delivering 600 V drain‑source breakdown voltage and 66 A continuous drain‑current rating with an integrated fast‑recovery body‑diode optimized for high‑efficiency switching‑converter topologiesSTMicroele.... Packaged in the standard through‑hole TO‑247‑3 housing, this lead‑free power transistor features low 42 mΩ maximum on‑state resistance, reduced gate‑charge parameters, high dv/dt ruggedness and Zener gate‑source protection, supporting stable operation across ‑55 °C to 150 °C junction‑temperature range and offering excellent performance for hard‑switching, resonant and zero‑voltage‑switched industrial power conversion circuits.
Key Features
● N‑channel enhancement‑mode power MOSFET with 600 V Vds rating, suitable for high‑voltage DC‑bus industrial power supplies.
● Built‑in fast‑recovery intrinsic body‑diode with low reverse recovery charge, minimizing switching losses for bridge‑type power circuits.
● Ultra‑high dv/dt ruggedness of 50 V/ns, greatly improving system reliability against fast‑voltage transients during switching events.
● Zener diode gate‑source protection prevents gate‑oxide damage caused by unexpected voltage spikes.
● 100% avalanche‑tested device guarantees robust unclamped inductive‑switching endurance for inductive‑load applications.
FAQ
Q: Why is the fast‑recovery body‑diode important for this MOSFET?
A: It reduces reverse recovery losses, which makes this device ideal for bridge‑based power‑converter topologies.
Q: What recommended gate‑drive voltage should be used?
A: A 10 V gate‑source driving voltage is required to achieve the specified low on‑resistance value.
Alternative N‑channel transistor Models
1. STW65N60DM2: Pin‑compatible 600 V N‑channel MDmesh DM2 MOSFET with 58 A drain‑current rating, a cost‑effective downgrade for lower‑power converter projects.
2. IRFP460: Well‑known 500 V, 20 A high‑voltage power MOSFET in TO‑247 package, suitable for low‑current high‑voltage switching applications with relaxed current requirements.
3. FCH47N60F: 600 V, 47 A fast‑recovery power MOSFET with comparable switching characteristics, a cross‑brand functional replacement for general high‑voltage converter designs.
