Model No: W66DP2RQQAHJ
Winbond Electronics W66DP2RQQAHJ
Manufacturer: Winbond Electronics
SEMICON NO.: W66DP2RQQAHJ
Package: 200-TFBGA
Stock: In stock
Description: DRAM 8Gb LPDDR4/4X 2133MHz
SEMICON NO.: W66DP2RQQAHJ
Package: 200-TFBGA
Stock: In stock
Description: DRAM 8Gb LPDDR4/4X 2133MHz
Quantity :
| Mfr | Winbond Electronics |
| Device Type | LPDDR4/LPDDR4X Combo SDRAM (DDP) |
| Memory Size / Density | 8 Gbit (1 GByte) |
| Memory Organization | 256M x 32 |
| Memory Architecture | DDP |
| Technology | SDRAM - Mobile LPDDR4X |
| Max Clock Frequency (tCK) | 2133 MHz |
| Max Data Rate | 4266 Mbps |
| Supply Voltage | 1.06 V to 1.17 V (LPDDR4), 1.7 V to 1.95 V (LPDDR4X) |
| Operating Temperature | -40°C to +105°C |
| Package | 200-TFBGA |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
W66DP2RQQAHJ Winbond 8Gbit LPDDR4X DDP SDRAM 2133MHz
W66DP2RQQAHJ is Winbond's industrial-grade dual-die packaged(DDP) LPDDR4X mobile SDRAM with total 8Gbit storage density configured as 256M×32 X32 bus architecture, fabricated with advanced low-power process and packed in compact 200-ball TFBGA measuring 10mm×14.5mm, supporting maximum 2133MHz clock speed equivalent to 4267Mbps data rate, multi-tier power supply of 1.06V~1.17V core voltage plus 0.6V low-voltage I/O and auxiliary 1.8V, operating steadily across -40°C to +105°C extended industrial temperature range while fully complying with RoHS3 standard and MSL3 moisture sensitivity requirement for standardized SMT mounting.
W66DP2RQQAHJ Features and Applications
This LPDDR4X memory integrates dual-channel parallel access design split into eight independent internal memory banks for concurrent read-write operations with merely 3.5ns minimal access latency, embedded multiple power-saving modes including deep power-down, partial array self-refresh and auto self-refresh to cut standby power drastically, features built-in write leveling and ZQ calibration for high-speed signal integrity, optimizes EMI suppression for switching noise reduction and supports dynamic frequency scaling to balance runtime performance and overall power dissipation in battery-driven equipment.
It acts as core system memory widely deployed in edge AI computing modules, automotive auxiliary ECU control boards, industrial handheld measurement devices, high-end portable medical diagnostic instruments and IoT gateway main controllers, catering to high-bandwidth yet strict low-power memory requirements for real-time algorithm operation and continuous field long-running work scenarios.
Alternative SDRAMs
● W66DP2RQQAGJ (Winbond): Pin-to-pin identical TFBGA-200 Winbond sibling variant running at 1866MHz, directly replaceable without PCB modification for lower-frequency cost-down redesign.
● MT53D51232DA-046 WT:B (Micron): Micron 8Gbit X32 LPDDR4X with matching package and voltage specs as mainstream second-source alternative during component supply shortage.
● K4F8032RBJ-XXXX (Samsung): Samsung 8Gb dual-channel LPDDR4X in same footprint for cross-brand substitution on automotive and industrial memory projects.
W66DP2RQQAHJ is Winbond's industrial-grade dual-die packaged(DDP) LPDDR4X mobile SDRAM with total 8Gbit storage density configured as 256M×32 X32 bus architecture, fabricated with advanced low-power process and packed in compact 200-ball TFBGA measuring 10mm×14.5mm, supporting maximum 2133MHz clock speed equivalent to 4267Mbps data rate, multi-tier power supply of 1.06V~1.17V core voltage plus 0.6V low-voltage I/O and auxiliary 1.8V, operating steadily across -40°C to +105°C extended industrial temperature range while fully complying with RoHS3 standard and MSL3 moisture sensitivity requirement for standardized SMT mounting.
W66DP2RQQAHJ Features and Applications
This LPDDR4X memory integrates dual-channel parallel access design split into eight independent internal memory banks for concurrent read-write operations with merely 3.5ns minimal access latency, embedded multiple power-saving modes including deep power-down, partial array self-refresh and auto self-refresh to cut standby power drastically, features built-in write leveling and ZQ calibration for high-speed signal integrity, optimizes EMI suppression for switching noise reduction and supports dynamic frequency scaling to balance runtime performance and overall power dissipation in battery-driven equipment.
It acts as core system memory widely deployed in edge AI computing modules, automotive auxiliary ECU control boards, industrial handheld measurement devices, high-end portable medical diagnostic instruments and IoT gateway main controllers, catering to high-bandwidth yet strict low-power memory requirements for real-time algorithm operation and continuous field long-running work scenarios.
Alternative SDRAMs
● W66DP2RQQAGJ (Winbond): Pin-to-pin identical TFBGA-200 Winbond sibling variant running at 1866MHz, directly replaceable without PCB modification for lower-frequency cost-down redesign.
● MT53D51232DA-046 WT:B (Micron): Micron 8Gbit X32 LPDDR4X with matching package and voltage specs as mainstream second-source alternative during component supply shortage.
● K4F8032RBJ-XXXX (Samsung): Samsung 8Gb dual-channel LPDDR4X in same footprint for cross-brand substitution on automotive and industrial memory projects.
