Model No: H5TQ4G63EFR-TEC
SK Hynix H5TQ4G63EFR-TEC
Manufacturer: SK Hynix
SEMICON NO.: H5TQ4G63EFR-TEC
Package: 96-FPBGA
Stock: In stock
Description: DRAM Chip 4Gb DDR3 SDRAM
SEMICON NO.: H5TQ4G63EFR-TEC
Package: 96-FPBGA
Stock: In stock
Description: DRAM Chip 4Gb DDR3 SDRAM
Quantity :
| Mfr | SK Hynix Inc. |
| Product Family | DDR3 SDRAM |
| Technology | CMOS |
| Memory Size / Density | 4 Gbit |
| Memory Organization | 256M x 16 |
| Number of Banks | 8 banks |
| Supply Voltage (VDD/VDDQ) | 1.5 V (Nominal) |
| Supply Voltage Range | 1.425V to 1.575V |
| I/O Interface | 1.5V |
| Clock Frequency (Max) | 1066 MHz (fc) |
| Operating Temperature | -40°C to +95°C (Industrial), 0°C to 95°C (Commercial) |
| Package | 96-FPBGA |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
H5TQ4G63EFR-TEC 4Gb DDR3 SDRAM
The H5TQ4G63EFR-TEC is a high-performance 4Gb DDR3 SDRAM memory chip from SK Hynix, delivering 256M × 16-bit organization with 2133 Mbps data transfer rate in a compact 96-ball FBGA (Fine-pitch Ball Grid Array) package. This synchronous DRAM operates at 1.5V nominal supply voltage (1.425V to 1.575V range) with maximum clock frequency of 1066 MHz, utilizing fully differential clock inputs and dual data rate architecture to achieve high bandwidth for demanding memory applications. The DDR SDRAM features commercial temperature rating of 0°C to +95°C and is manufactured using advanced CMOS process technology with lead-free and halogen-free RoHS-compliant packaging.
H5TQ4G63EFR-TECDDR SDRAM Reliability Features
This DDR3 SDRAM incorporates advanced power-saving features including auto-refresh and self-refresh modes that significantly reduce standby power consumption for battery-operated applications. The on-die termination (ODT) feature dynamically adjusts termination resistance to match system impedance, improving signal integrity while minimizing power dissipation compared to external termination schemes. Data mask (DM) functionality allows masking of write data at both rising and falling edges of the data strobe, enabling partial word writes without read-modify-write operations. The DRAM maintains data integrity through 8192 refresh cycles every 64ms, with operating temperatures up to 95°C ensuring reliable performance in thermally challenging environments.
Alternativememory chips
● H5TQ4G63EFR-RDC: Speed grade variant offering identical 4Gb density and 256M×16 organization with different timing specifications for applications requiring alternative performance profiles.
● H5TQ4G63EFR-TEI: Industrial temperature grade version rated for -40°C to +95°C operation, suitable for outdoor and harsh environment deployments requiring extended temperature range.
● K4B4G1646E-BYMA: Samsung's equivalent 4Gb DDR3 SDRAM providing pin-compatible alternative with comparable 2133 Mbps data rate and FBGA-96 packaging for supply chain flexibility.
● MT41J256M16HA-125:E: Micron Technology's 4Gb DDR3L solution offering similar density with lower 1.35V operating voltage for power-sensitive mobile applications.
● W9751G6NB-25: Winbond's cost-competitive 4Gb DDR3 alternative featuring compatible electrical specifications and package options for budget-conscious designs.
The H5TQ4G63EFR-TEC is a high-performance 4Gb DDR3 SDRAM memory chip from SK Hynix, delivering 256M × 16-bit organization with 2133 Mbps data transfer rate in a compact 96-ball FBGA (Fine-pitch Ball Grid Array) package. This synchronous DRAM operates at 1.5V nominal supply voltage (1.425V to 1.575V range) with maximum clock frequency of 1066 MHz, utilizing fully differential clock inputs and dual data rate architecture to achieve high bandwidth for demanding memory applications. The DDR SDRAM features commercial temperature rating of 0°C to +95°C and is manufactured using advanced CMOS process technology with lead-free and halogen-free RoHS-compliant packaging.
H5TQ4G63EFR-TECDDR SDRAM Reliability Features
This DDR3 SDRAM incorporates advanced power-saving features including auto-refresh and self-refresh modes that significantly reduce standby power consumption for battery-operated applications. The on-die termination (ODT) feature dynamically adjusts termination resistance to match system impedance, improving signal integrity while minimizing power dissipation compared to external termination schemes. Data mask (DM) functionality allows masking of write data at both rising and falling edges of the data strobe, enabling partial word writes without read-modify-write operations. The DRAM maintains data integrity through 8192 refresh cycles every 64ms, with operating temperatures up to 95°C ensuring reliable performance in thermally challenging environments.
Alternativememory chips
● H5TQ4G63EFR-RDC: Speed grade variant offering identical 4Gb density and 256M×16 organization with different timing specifications for applications requiring alternative performance profiles.
● H5TQ4G63EFR-TEI: Industrial temperature grade version rated for -40°C to +95°C operation, suitable for outdoor and harsh environment deployments requiring extended temperature range.
● K4B4G1646E-BYMA: Samsung's equivalent 4Gb DDR3 SDRAM providing pin-compatible alternative with comparable 2133 Mbps data rate and FBGA-96 packaging for supply chain flexibility.
● MT41J256M16HA-125:E: Micron Technology's 4Gb DDR3L solution offering similar density with lower 1.35V operating voltage for power-sensitive mobile applications.
● W9751G6NB-25: Winbond's cost-competitive 4Gb DDR3 alternative featuring compatible electrical specifications and package options for budget-conscious designs.
