Model No: NTJS4151PT1G
onsemi NTJS4151PT1G
Manufacturer: onsemi
SEMICON NO.: NTJS4151PT1G
Package: SOT-363 (SC-88, 6-TSSOP)
Stock: In stock
Description: Power MOSFET P-Channel Dual 20 V 3.3A 1W
SEMICON NO.: NTJS4151PT1G
Package: SOT-363 (SC-88, 6-TSSOP)
Stock: In stock
Description: Power MOSFET P-Channel Dual 20 V 3.3A 1W
Quantity :
| Mfr | onsemi |
| Device Type | Dual P-Channel Power MOSFET |
| Technology | MOSFET(Metal Oxide) |
| Drain-Source Voltage (VDSS) | -20 V |
| Gate-Source Voltage (VGS) | ±8 V |
| Continuous Drain Current (ID) @ 25°C | -880 mA |
| Power Dissipation (PD) | 330 mW |
| Operating Temperature | -55°C to +150°C |
| Package | SOT-363 (SC-88, 6-TSSOP) |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
NTJS4151PT1G N-channel MOSFET
The NTJS4151PT1G, a high-performance, low-voltage dual N-channel enhancement mode MOSFET from ON Semiconductor, is housed in a compact SOT-363 (SC-88) 6-pin surface-mount package, engineered to deliver efficient power switching and signal amplification in space-constrained portable and battery-powered applications. Its key electrical specifications include a low 1.8V typical gate threshold voltage (Vgs(th)) that ensures reliable switching from 3.3V and 5V logic levels, a maximum drain-source voltage (Vds) of 20V and gate-source voltage (Vgs) of ±8V, a fast switching performance with typical input capacitance (Ciss) of 60pF and output capacitance (Coss) of 20pF per channel, and a low gate charge (Qg) of 1.3nC typical that minimizes drive losses in high-frequency switching applications. Rated for an operating junction temperature range of -55°C to 150°C and supplied on a 7-inch, 3,000-unit tape-and-reel for automated assembly, it is fully RoHS compliant and features lead-free plating, making it widely deployed in load switching circuits, power management modules, battery protection circuits, motor drivers in small consumer electronics, and signal routing in portable audio devices that demand compact dual MOSFET solutions with low on-resistance and logic-level compatibility.
Alternative automotive MOSFET models
● DMN3404L (Diodes Incorporated): A dual N-channel MOSFET with 0.065Ω Rds(on) at 4.5V, 2.5A continuous current in SOT-363 package, optimized for high-current load switching in portable devices.
● NX3008NBK (Nexperia): A dual N-channel MOSFET with 0.12Ω Rds(on) at 4.5V, 1.8A continuous current in SOT-363 package, designed for space-constrained power management applications.
● FDN340P (onsemi): A single P-channel MOSFET with 0.09Ω Rds(on) at 4.5V, 2.3A continuous current in SOT-23 package, ideal for high-side load switching in battery-powered systems.
The NTJS4151PT1G, a high-performance, low-voltage dual N-channel enhancement mode MOSFET from ON Semiconductor, is housed in a compact SOT-363 (SC-88) 6-pin surface-mount package, engineered to deliver efficient power switching and signal amplification in space-constrained portable and battery-powered applications. Its key electrical specifications include a low 1.8V typical gate threshold voltage (Vgs(th)) that ensures reliable switching from 3.3V and 5V logic levels, a maximum drain-source voltage (Vds) of 20V and gate-source voltage (Vgs) of ±8V, a fast switching performance with typical input capacitance (Ciss) of 60pF and output capacitance (Coss) of 20pF per channel, and a low gate charge (Qg) of 1.3nC typical that minimizes drive losses in high-frequency switching applications. Rated for an operating junction temperature range of -55°C to 150°C and supplied on a 7-inch, 3,000-unit tape-and-reel for automated assembly, it is fully RoHS compliant and features lead-free plating, making it widely deployed in load switching circuits, power management modules, battery protection circuits, motor drivers in small consumer electronics, and signal routing in portable audio devices that demand compact dual MOSFET solutions with low on-resistance and logic-level compatibility.
Alternative automotive MOSFET models
● DMN3404L (Diodes Incorporated): A dual N-channel MOSFET with 0.065Ω Rds(on) at 4.5V, 2.5A continuous current in SOT-363 package, optimized for high-current load switching in portable devices.
● NX3008NBK (Nexperia): A dual N-channel MOSFET with 0.12Ω Rds(on) at 4.5V, 1.8A continuous current in SOT-363 package, designed for space-constrained power management applications.
● FDN340P (onsemi): A single P-channel MOSFET with 0.09Ω Rds(on) at 4.5V, 2.3A continuous current in SOT-23 package, ideal for high-side load switching in battery-powered systems.
