Model No: MT40A1G8SA-062E:E
Micron Technology MT40A1G8SA-062E:E
Manufacturer: Micron Technology
SEMICON NO.: MT40A1G8SA-062E:E
Package: 78-FBGA
Stock: In stock
Description: IC DDR4 SDRAM 8Gb 3200 Mbps
SEMICON NO.: MT40A1G8SA-062E:E
Package: 78-FBGA
Stock: In stock
Description: IC DDR4 SDRAM 8Gb 3200 Mbps
Quantity :
| Mfr | Micron Technology |
| Memory Type | DDR4 SDRAM |
| Density / Capacity | 8 Gb (Gigabit) / 1 GB (Gigabyte) |
| Organization | 1G x 8 (1 Gigawatt x 8 bits) |
| Speed Grade | -062E (DDR4-3200) |
| Data Rate | 3200 MT/s (Mega Transfers per second) |
| Clock Frequency (CK) | 1600 MHz |
| Voltage (VDD/VDDQ) | 1.2 V |
| Burst Length (BL) | 8 (Burst Chop 4 supported) |
| CAS Latency (CL) | 22 ( @ DDR4-3200, tCK=0.625ns) |
| Refresh | Auto-Refresh & Self-Refresh |
| Operating Temperature | 0°C to +95°C (Commercial) / -40°C to +95°C (Industrial) |
| Package | 78-FBGA |
| Mounting Type | Surface Mount (SMD/SMT) |
| Compliance | RoHS Complian |
MT40A1G8SA-062E:E DDR4 SDRAM
The MT40A1G8SA-062E:E is a high-performance DDR4 SDRAM (Synchronous Dynamic Random-Access Memory) device manufactured by Micron Technology. This 8 Gbit (1G x 8) memory chip is designed for applications requiring fast data access and high-density storage. It features a data bus width of 8 bits and operates at a maximum clock frequency of 1.6 GHz. The device supports a wide operating temperature range of -40°C to +95°C, making it suitable for both commercial and industrial applications. Housed in a compact 78-pin FBGA (Fine Ball Grid Array) package, it offers low power consumption with a supply voltage range of 1.14V to 1.26V. The MT40A1G8SA-062E:E is ideal for use in high-speed computing systems, networking equipment, and other applications where reliable and efficient memory performance is critical.
Alternative DDR4 SDRAM Models
● MT40A1G8SA-062E:R: A similar DDR4 SDRAM from Micron, offering the same memory capacity and performance characteristics but with slight variations in packaging or manufacturing processes.
● MT40A512M16LY-062E IT:E: A higher-density alternative (512M x 16) from Micron, providing more storage capacity while maintaining similar performance specifications, suitable for applications requiring larger memory sizes.
● MT41K128M16JT-125IT:K: Another DDR4 SDRAM from Micron, offering a different memory organization (128M x 16) and optimized for specific system requirements.
The MT40A1G8SA-062E:E is a high-performance DDR4 SDRAM (Synchronous Dynamic Random-Access Memory) device manufactured by Micron Technology. This 8 Gbit (1G x 8) memory chip is designed for applications requiring fast data access and high-density storage. It features a data bus width of 8 bits and operates at a maximum clock frequency of 1.6 GHz. The device supports a wide operating temperature range of -40°C to +95°C, making it suitable for both commercial and industrial applications. Housed in a compact 78-pin FBGA (Fine Ball Grid Array) package, it offers low power consumption with a supply voltage range of 1.14V to 1.26V. The MT40A1G8SA-062E:E is ideal for use in high-speed computing systems, networking equipment, and other applications where reliable and efficient memory performance is critical.
Alternative DDR4 SDRAM Models
● MT40A1G8SA-062E:R: A similar DDR4 SDRAM from Micron, offering the same memory capacity and performance characteristics but with slight variations in packaging or manufacturing processes.
● MT40A512M16LY-062E IT:E: A higher-density alternative (512M x 16) from Micron, providing more storage capacity while maintaining similar performance specifications, suitable for applications requiring larger memory sizes.
● MT41K128M16JT-125IT:K: Another DDR4 SDRAM from Micron, offering a different memory organization (128M x 16) and optimized for specific system requirements.
