Model No: MT46V32M16P-5B IT:J
Micron Technology Inc. MT46V32M16P-5B IT:J
Manufacturer: Micron Technology Inc.
SEMICON NO.: MT46V32M16P-5B IT:J
Package: 66-TSOP
Stock: In stock
Description: SDRAM IC 512Mbit Parallel 200MHz 700 ps
SEMICON NO.: MT46V32M16P-5B IT:J
Package: 66-TSOP
Stock: In stock
Description: SDRAM IC 512Mbit Parallel 200MHz 700 ps
Quantity :
| Mfr | Micron Technology Inc. |
| Device Type | Double Data Rate (DDR) SDRAM |
| Memory Size / Density | 512 Mbit (64 MByte) |
| Memory Organization | 32M x 16 |
| Memory Format | DRAM (Volatile) |
| Max Clock Frequency | 200 MHz |
| Data Rate (Max) | 400 MT/s |
| Supply Voltage | 2.5 V to 2.7 V (Nominal 2.6V) |
| Supply Current | 85 mA (Typical) |
| Operating Temperature | -40°C to +85°C |
| Package | 66-TSOP |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
MT46V32M16P-5B IT:J DDR SDRAM memory IC 512Mb
The MT46V32M16P-5B IT:J, a high-density 512Mb DDR SDRAM memory IC from Micron, is housed in a 66-pin 8x12mm FBGA surface-mount package, organized as 32M x 16 bits across four independent internal banks to deliver exceptional memory bandwidth for legacy embedded and consumer electronics systems. Operating at a 2.5V nominal core voltage with a 2.6V maximum absolute rating, this double-data-rate SDRAM leverages a 2- bit prefetch architecture to transfer two data words per clock cycle at the rising and falling edges, achieving a 200MHz clock frequency that delivers an effective 400MT/s peak data transfer rate, with a 5ns minimum clock cycle time and a 55ns maximum CAS latency at standard operating conditions.
It supports standard SDRAM commands including auto-refresh, self-refresh, burst read/write with programmable burst lengths of 2, 4 and 8, and features differential clock inputs (CK and CK#) for precise signal synchronization, alongside a bidirectional data strobe (DQS) that is edge-aligned with output data for accurate high-speed data capture. Rated for a commercial 0°C to 70°C operating temperature range, it undergoes rigorous quality validation to ensure stable long-term operation, with a 64ms refresh interval and 4096 refresh cycles, making it a widely adopted, cost-effective memory solution for legacy x86 embedded systems, digital televisions, set-top boxes, industrial control panels, network routers and mid-range consumer multimedia devices that require high-density, high-bandwidth DDR1 memory performance.
Alternative DDR SDRAMs
1. HY5DU561622FTP-5 by SK Hynix: A 512Mb 32M x16 DDR SDRAM with 200MHz clock, 400MT/s transfer rate and 66-pin TSOPII package, offering direct pin-to-pin compatibility for legacy DDR1 memory upgrades.
2. K4H511638J-LCCC by Samsung: A 512Mb 16-bit DDR SDRAM with 2.5V operating voltage, 400MT/s bandwidth and 66-pin TSOP package, optimized for consumer multimedia and embedded system memory expansion.
3. IS42S16320D-6BI by ISSI: A 512Mb 16-bit SDRAM with 166MHz clock, 3.3V operating voltage and industrial temperature rating, ideal for low-power legacy industrial embedded memory applications.
The MT46V32M16P-5B IT:J, a high-density 512Mb DDR SDRAM memory IC from Micron, is housed in a 66-pin 8x12mm FBGA surface-mount package, organized as 32M x 16 bits across four independent internal banks to deliver exceptional memory bandwidth for legacy embedded and consumer electronics systems. Operating at a 2.5V nominal core voltage with a 2.6V maximum absolute rating, this double-data-rate SDRAM leverages a 2- bit prefetch architecture to transfer two data words per clock cycle at the rising and falling edges, achieving a 200MHz clock frequency that delivers an effective 400MT/s peak data transfer rate, with a 5ns minimum clock cycle time and a 55ns maximum CAS latency at standard operating conditions.
It supports standard SDRAM commands including auto-refresh, self-refresh, burst read/write with programmable burst lengths of 2, 4 and 8, and features differential clock inputs (CK and CK#) for precise signal synchronization, alongside a bidirectional data strobe (DQS) that is edge-aligned with output data for accurate high-speed data capture. Rated for a commercial 0°C to 70°C operating temperature range, it undergoes rigorous quality validation to ensure stable long-term operation, with a 64ms refresh interval and 4096 refresh cycles, making it a widely adopted, cost-effective memory solution for legacy x86 embedded systems, digital televisions, set-top boxes, industrial control panels, network routers and mid-range consumer multimedia devices that require high-density, high-bandwidth DDR1 memory performance.
Alternative DDR SDRAMs
1. HY5DU561622FTP-5 by SK Hynix: A 512Mb 32M x16 DDR SDRAM with 200MHz clock, 400MT/s transfer rate and 66-pin TSOPII package, offering direct pin-to-pin compatibility for legacy DDR1 memory upgrades.
2. K4H511638J-LCCC by Samsung: A 512Mb 16-bit DDR SDRAM with 2.5V operating voltage, 400MT/s bandwidth and 66-pin TSOP package, optimized for consumer multimedia and embedded system memory expansion.
3. IS42S16320D-6BI by ISSI: A 512Mb 16-bit SDRAM with 166MHz clock, 3.3V operating voltage and industrial temperature rating, ideal for low-power legacy industrial embedded memory applications.
