Model No: MT41K256M16TW-107:P
Micron Technology Inc. MT41K256M16TW-107:P
Manufacturer: Micron Technology Inc.
SEMICON NO.: MT41K256M16TW-107:P
Package: 96-FBGA
Stock: In stock
Description: SDRAM DDR3L Memory IC 4Gb 933MHz 20ns
SEMICON NO.: MT41K256M16TW-107:P
Package: 96-FBGA
Stock: In stock
Description: SDRAM DDR3L Memory IC 4Gb 933MHz 20ns
Quantity :
| Mfr | Micron Technology Inc. |
| Device Type | DDR3L SDRAM (Low Voltage) |
| Memory Size | 4 Gbit (512 MByte) |
| Memory Organization | 256M x 16 |
| Internal Banks | 8 |
| Data Rate | 1866 MT/s |
| Max Clock Frequency (tCK) | 933 MHz |
| Access Time (tAC) | 20 ns |
| CAS Latency (CL) | 13 |
| Interface Type | Parallel |
| Prefetch Architecture | 8n-bit |
| Supply Voltage (VDD/VDDQ) | 1.283 V to 1.45 V |
| Supply Current (Max) | 46 mA |
| Operating Temperature | 0°C to 95°C |
| Package | 96-FBGA |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
MT41K256M16TW-107:P Micron 4Gb DDR3L SDRAM,96-FBGA Commercial Grade Memory IC
MT41K256M16TW-107:P is a JEDEC-standard low-voltage DDR3L SDRAM from Micron's mainstream MT41K product line with total 4Gb storage organized as 256M×16-bit configuration, sealed inside compact 96-ball thin FBGA surface-mount package rated for commercial operating temperature ranging from 0℃ to +95℃, running nominal core supply voltage at 1.35V with acceptable input range between 1.283V and 1.45V while supporting backward compatibility with conventional 1.5V DDR3 power rail, featuring maximum 933MHz core clock and 1866MT/s effective double-edge data transfer speed, fully RoHS compliant with MSL3 moisture rating to satisfy standard automated SMT PCB assembly for consumer and embedded electronics production.
DDR3 SDRAM Features and Applications
This memory chip adopts industry-standard 8n prefetch internal architecture alongside eight independent internal memory banks to realize flexible burst operation switching between BC4 and BL8 modes on-the-fly, integrated core functions including dynamic on-die termination, write leveling, ZQ impedance calibration and multi-mode self-refresh to optimize signal integrity and lower idle power draw, programmable CAS latency options of CL9,CL10 and CL11 adapt to varied system timing requirements, built-in asynchronous reset and data mask pins simplify peripheral circuit design while typical quiescent operating current stays around 32mA for low-power embedded equipment deployment.
It works as primary external system memory widely equipped inside industrial control mainboards, FPGA/ARM embedded core boards, portable multimedia devices, digital set-top boxes, medical handheld testing instruments and low-power IoT gateway hardware, balancing high bandwidth, moderate power consumption and stable cost to become a mainstream bulk-stock DRAM solution for medium-volume consumer and industrial embedded product development.
Alternative DDR3L memory solutions
● K4B4G1646D-BYMA(Samsung): Samsung original 4Gb×16 DDR3L 1866MT/s 96FBGA memory with identical pin assignment and electrical specs for direct drop-in PCB replacement during Micron part shortage.
● H5TC4G63AFR-PBA(SK Hynix): Hynix cross-brand DDR3L alternative sharing same density, bit width and package dimension with matched timing parameters for seamless second-source substitution.
● IS43TR16256BL(ISSI): Industrial-friendly DRAM with compatible footprint and 1866Mbps rate to serve cost-sensitive domestic production substitution demand.
MT41K256M16TW-107:P is a JEDEC-standard low-voltage DDR3L SDRAM from Micron's mainstream MT41K product line with total 4Gb storage organized as 256M×16-bit configuration, sealed inside compact 96-ball thin FBGA surface-mount package rated for commercial operating temperature ranging from 0℃ to +95℃, running nominal core supply voltage at 1.35V with acceptable input range between 1.283V and 1.45V while supporting backward compatibility with conventional 1.5V DDR3 power rail, featuring maximum 933MHz core clock and 1866MT/s effective double-edge data transfer speed, fully RoHS compliant with MSL3 moisture rating to satisfy standard automated SMT PCB assembly for consumer and embedded electronics production.
DDR3 SDRAM Features and Applications
This memory chip adopts industry-standard 8n prefetch internal architecture alongside eight independent internal memory banks to realize flexible burst operation switching between BC4 and BL8 modes on-the-fly, integrated core functions including dynamic on-die termination, write leveling, ZQ impedance calibration and multi-mode self-refresh to optimize signal integrity and lower idle power draw, programmable CAS latency options of CL9,CL10 and CL11 adapt to varied system timing requirements, built-in asynchronous reset and data mask pins simplify peripheral circuit design while typical quiescent operating current stays around 32mA for low-power embedded equipment deployment.
It works as primary external system memory widely equipped inside industrial control mainboards, FPGA/ARM embedded core boards, portable multimedia devices, digital set-top boxes, medical handheld testing instruments and low-power IoT gateway hardware, balancing high bandwidth, moderate power consumption and stable cost to become a mainstream bulk-stock DRAM solution for medium-volume consumer and industrial embedded product development.
Alternative DDR3L memory solutions
● K4B4G1646D-BYMA(Samsung): Samsung original 4Gb×16 DDR3L 1866MT/s 96FBGA memory with identical pin assignment and electrical specs for direct drop-in PCB replacement during Micron part shortage.
● H5TC4G63AFR-PBA(SK Hynix): Hynix cross-brand DDR3L alternative sharing same density, bit width and package dimension with matched timing parameters for seamless second-source substitution.
● IS43TR16256BL(ISSI): Industrial-friendly DRAM with compatible footprint and 1866Mbps rate to serve cost-sensitive domestic production substitution demand.
