Model No: IS42S32200N-6BLI-TR
ISSI IS42S32200N-6BLI-TR
Manufacturer: ISSI
SEMICON NO.: IS42S32200N-6BLI-TR
Package: 90-TFBGA
Stock: In stock
Description: IC DRAM 64MBIT LVTTL 166 MHz 5.4 ns
SEMICON NO.: IS42S32200N-6BLI-TR
Package: 90-TFBGA
Stock: In stock
Description: IC DRAM 64MBIT LVTTL 166 MHz 5.4 ns
Quantity :
| Mfr | ISSI |
| Device Type | SDRAM |
| Memory Size / Density | 64 Mbit (8 MByte) |
| Memory Organization | 2M x 32 |
| Number of Banks | 4 |
| Max Clock Frequency | 166 MHz |
| Access Time (tAC) | 5.4 ns (Max) |
| Interface Type | Parallel (Synchronous) |
| I/O Type | LVTTL (3.3V Logic) |
| Supply Voltage (Vdd/Vddq) | 3.0 V to 3.6 V |
| Operating Temperature | -40°C to +85°C (TA) |
| Package | 90-TFBGA |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
IS42S32200N-6BLI-TR synchronous DRAM
The IS42S32200N-6BLI-TR is a high-performance 64Mbit (2M×32) synchronous DRAM (SDRAM) from Integrated Silicon Solution Inc (ISSI), built on a 3.3V core with LVTTL-compatible interface and organized as four independent banks for efficient concurrent access. It operates at a 166MHz clock frequency with a fast 5.4ns access time, delivering high bandwidth for data-intensive embedded systems. Housed in a compact 90-TFBGA (8mm×13mm) package and supplied in tape-and-reel (TR) format, it is optimized for automated assembly and space-constrained designs. The device supports standard SDRAM commands including burst read/write, auto-refresh, and self-refresh, ensuring seamless integration with most memory controllers.
SDRAM Key Features AND Applications
This SDRAM offers a 3V to 3.6V wide supply voltage range and an industrial temperature rating of -40°C to 85°C, ensuring stable operation in harsh industrial and commercial environments. It provides a 32-bit wide data bus and four bank architecture to enable high-speed data throughput and efficient memory interleaving. With a 166MHz clock speed and 5.4ns access time, it delivers reliable performance for real-time data processing. The device features auto-refresh and self-refresh modes to minimize power consumption during idle periods, and it is RoHS-compliant with a moisture sensitivity level (MSL) of 3 for reliable manufacturing handling.
It is widely used in embedded systems such as industrial controllers, automotive electronics, and networking equipment, providing high-speed volatile storage for firmware buffering and data processing. It serves consumer electronics including set-top boxes, smart TVs, and gaming devices, supporting high-bandwidth multimedia data handling. Additionally, it is applied in medical devices, point-of-sale terminals, and IoT gateways, delivering cost-effective, high-reliability memory solutions for compact, power-sensitive designs.
Alternative memory chips
● Micron MT48LC2M32B2-6A: 64Mbit (2M×32) SDRAM, 166MHz, 5.4ns, 90-TFBGA, industrial temperature range, compatible with ISSI IS42S32200N series.
● Samsung K4S643232C-UC60: 64Mbit 32-bit SDRAM, 166MHz clock, 5.4ns access time, 90-ball BGA, optimized for high-speed embedded applications.
● Winbond W9864G2JH-6: 64Mbit (2M×32) SDRAM, 166MHz, 5.4ns, 90-TFBGA, low power consumption, pin-compatible alternative for general-purpose memory designs.
The IS42S32200N-6BLI-TR is a high-performance 64Mbit (2M×32) synchronous DRAM (SDRAM) from Integrated Silicon Solution Inc (ISSI), built on a 3.3V core with LVTTL-compatible interface and organized as four independent banks for efficient concurrent access. It operates at a 166MHz clock frequency with a fast 5.4ns access time, delivering high bandwidth for data-intensive embedded systems. Housed in a compact 90-TFBGA (8mm×13mm) package and supplied in tape-and-reel (TR) format, it is optimized for automated assembly and space-constrained designs. The device supports standard SDRAM commands including burst read/write, auto-refresh, and self-refresh, ensuring seamless integration with most memory controllers.
SDRAM Key Features AND Applications
This SDRAM offers a 3V to 3.6V wide supply voltage range and an industrial temperature rating of -40°C to 85°C, ensuring stable operation in harsh industrial and commercial environments. It provides a 32-bit wide data bus and four bank architecture to enable high-speed data throughput and efficient memory interleaving. With a 166MHz clock speed and 5.4ns access time, it delivers reliable performance for real-time data processing. The device features auto-refresh and self-refresh modes to minimize power consumption during idle periods, and it is RoHS-compliant with a moisture sensitivity level (MSL) of 3 for reliable manufacturing handling.
It is widely used in embedded systems such as industrial controllers, automotive electronics, and networking equipment, providing high-speed volatile storage for firmware buffering and data processing. It serves consumer electronics including set-top boxes, smart TVs, and gaming devices, supporting high-bandwidth multimedia data handling. Additionally, it is applied in medical devices, point-of-sale terminals, and IoT gateways, delivering cost-effective, high-reliability memory solutions for compact, power-sensitive designs.
Alternative memory chips
● Micron MT48LC2M32B2-6A: 64Mbit (2M×32) SDRAM, 166MHz, 5.4ns, 90-TFBGA, industrial temperature range, compatible with ISSI IS42S32200N series.
● Samsung K4S643232C-UC60: 64Mbit 32-bit SDRAM, 166MHz clock, 5.4ns access time, 90-ball BGA, optimized for high-speed embedded applications.
● Winbond W9864G2JH-6: 64Mbit (2M×32) SDRAM, 166MHz, 5.4ns, 90-TFBGA, low power consumption, pin-compatible alternative for general-purpose memory designs.
