Model No: S29GL512S10TFI010
Infineon Technologies S29GL512S10TFI010
Manufacturer: Infineon Technologies
SEMICON NO.: S29GL512S10TFI010
Package: 56-TSOP
Stock: In stock
Description: NOR Flash Memory Parallel 512 Mb 3V 100ns
SEMICON NO.: S29GL512S10TFI010
Package: 56-TSOP
Stock: In stock
Description: NOR Flash Memory Parallel 512 Mb 3V 100ns
Quantity :
| Mfr | Infineon Technologies |
| Product Family | GL-S |
| Device Type | Parallel NOR Flash Memory |
| Memory Size / Density | 512 Mbit (64 MByte) |
| Memory Organization | 32M x 16-bit |
| Architecture | Uniform Sector |
| Interface Type | Parallel |
| Data Bus Width | 16-bit |
| Supply Voltage (Vcc) | 2.7 V to 3.6 V |
| Standby Current (Typ) | 100 µA |
| Active Read Current (Max) | 60 mA |
| Operating Temperature | -40°C to +85°C |
| Package | 56-TSOP |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
S29GL512S10TFI010 Infineon 512Mbit Parallel NOR Flash
S29GL512S10TFI010 is an industrial-grade parallel NOR flash memory originally developed by Spansion and later manufactured under Infineon’s product portfolio with MirrorBit 90nm fabrication process, structured as 32M×16bit (total 512Mbit storage density), packed in standard 56-pin TSOP surface-mount housing rated for 2.7V to 3.6V single-supply operation and 100ns typical random access speed, supporting reliable working temperature spanning from -40°C up to +85°C for general industrial and embedded ambient environments while complying with global RoHS restriction standards for lead-free electronic assembly.
Infineon NOR Flash Features and Applications
This nonvolatile flash component integrates built-in 16-byte page read buffer and 64-byte write buffer to shorten bulk programming cycles significantly, delivers minimum 100,000 guaranteed sector erase endurance cycles alongside typical 20-year ambient data retention without external refresh circuitry, includes secured OTP silicon sector for fixed boot-code storage and program/erase suspend-resume function to pause ongoing memory operations for urgent system read tasks, and features uniform sector partitioning plus hardware write-protect pins to avoid accidental data overwriting during equipment production or field operation.
It serves as core boot firmware storage widely adopted inside industrial PLC controllers, network communication gateway mainboards, medical diagnostic embedded devices, automotive non-safety auxiliary control modules and legacy set-top-box main circuits, fulfilling high-reliability fixed program storage demands that require instant parallel memory access and long-term stable data preservation across fluctuating working temperatures.
Alternative flash memory models
● MX29GL512FTTI-10G (Macronix): Pin-to-pin compatible 512Mbit parallel NOR flash with identical 3V working voltage,100ns access time and TSOP-56 outline as direct drop-in cross-brand replacement without PCB layout revision.
● JS28F512M29EWHA (Micron): 56-TSOP packaged 512Mbit parallel flash matching core electrical specs for alternate second sourcing in mass-production component shortage scenarios.
● S29GL512P10TFIR10 (Infineon): Same-family Infineon variant with consistent density and package, optimized sector layout for seamless substitution within existing S29GL platform designs.
S29GL512S10TFI010 is an industrial-grade parallel NOR flash memory originally developed by Spansion and later manufactured under Infineon’s product portfolio with MirrorBit 90nm fabrication process, structured as 32M×16bit (total 512Mbit storage density), packed in standard 56-pin TSOP surface-mount housing rated for 2.7V to 3.6V single-supply operation and 100ns typical random access speed, supporting reliable working temperature spanning from -40°C up to +85°C for general industrial and embedded ambient environments while complying with global RoHS restriction standards for lead-free electronic assembly.
Infineon NOR Flash Features and Applications
This nonvolatile flash component integrates built-in 16-byte page read buffer and 64-byte write buffer to shorten bulk programming cycles significantly, delivers minimum 100,000 guaranteed sector erase endurance cycles alongside typical 20-year ambient data retention without external refresh circuitry, includes secured OTP silicon sector for fixed boot-code storage and program/erase suspend-resume function to pause ongoing memory operations for urgent system read tasks, and features uniform sector partitioning plus hardware write-protect pins to avoid accidental data overwriting during equipment production or field operation.
It serves as core boot firmware storage widely adopted inside industrial PLC controllers, network communication gateway mainboards, medical diagnostic embedded devices, automotive non-safety auxiliary control modules and legacy set-top-box main circuits, fulfilling high-reliability fixed program storage demands that require instant parallel memory access and long-term stable data preservation across fluctuating working temperatures.
Alternative flash memory models
● MX29GL512FTTI-10G (Macronix): Pin-to-pin compatible 512Mbit parallel NOR flash with identical 3V working voltage,100ns access time and TSOP-56 outline as direct drop-in cross-brand replacement without PCB layout revision.
● JS28F512M29EWHA (Micron): 56-TSOP packaged 512Mbit parallel flash matching core electrical specs for alternate second sourcing in mass-production component shortage scenarios.
● S29GL512P10TFIR10 (Infineon): Same-family Infineon variant with consistent density and package, optimized sector layout for seamless substitution within existing S29GL platform designs.
