Model No: IRFR120NTRPBF

Infineon Technologies IRFR120NTRPBF

Manufacturer: Infineon Technologies
SEMICON NO.: IRFR120NTRPBF
Package: TO-252AA
Stock: In stock
Description: MOSFET N-CH 100V 9.4A DPAK
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 Mfr Infineon Technologies
 Product Category N-Channel Power MOSFET
 Series  HEXFET®
 Drain-Source Voltage (Vdss)  100 V
 Continuous Drain Current (Id)  9.4 A (at Tc = 25°C)
 Drive Voltage (Max Rds On, Min Rds On)  10 V
 Drain-Source On Resistance (Rds(on))  210 mΩ (Max) @ 5.6 A, 10 V
 Power Dissipation (Pd) 48 W (at Tc = 25°C)
 Gate Threshold Voltage (Vgs(th)) 4 V (Max) @ 250 µA
 Gate-Source Voltage (Vgs) ±20 V (Max)
 Total Gate Charge (Qg)  25 nC (Max) @ 10 V
 Input Capacitance (Ciss) 330 pF (Max) @ 25 V
 Reverse Transfer Capacitance (Crss)  54 pF @ 50 V
 Operating Temperature  -55 °C to +175 °C
 Package TO-252AA
 Mounting Surface Mount (SMD/SMT)
 Compliance     RoHS Compliant
 
IRFR120NTRPBF MOSFET N-channel 100 V 9.4A (Tc) 48W (Tc)
The IRFR120NTRPBF is a high-performance, N-channel HEXFET® Power MOSFET from Infineon Technologies, designed for high-speed switching applications. This device features a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 9.4A. It has a low on-state resistance (RDS(on)) of 0.21Ω at VGS = 10V, ensuring high efficiency and minimal power loss. The IRFR120NTRPBF is housed in a TO-252AA (D-Pak) surface-mount package, making it suitable for compact designs.
Characteristics and Advantages
The IRFR120NTRPBF operates within a supply voltage range of ±20V and features a gate-source threshold voltage (VGS(th)) of 2V to 4V. It has a typical turn-on delay time of 4.5ns and a turn-off delay time of 32ns. The device also includes a dynamic dV/dt rating and is fully avalanche rated, ensuring robust performance under various conditions.
This MOSFET's low on-state resistance and fast switching speed make it ideal for applications requiring high efficiency and minimal power loss. The IRFR120NTRPBF also features a low gate charge (Qg) of 16.7nC, contributing to its fast switching capabilities. Additionally, the device includes enhanced avalanche energy capability, ensuring reliability in harsh operating conditions.
IRFR120NTRPBF Applications
1. Power Management: For efficient power conversion in power supplies and motor control systems.
2. Switching Applications: For high-speed switching in DC-DC converters and other power electronics.
3. Industrial Automation: For reliable power control in industrial equipment.
4. Consumer Electronics: For applications requiring high efficiency and compact design.
Alternative N-channel Power MOSFET Models
● IRFR120N: A similar N-channel Power MOSFET with the same voltage and current ratings, but in a different package type.
● IRFZ44N: A popular N-channel MOSFET with a higher current rating, suitable for applications requiring higher power handling.
● IRFB3607: Another N-channel MOSFET with a lower on-state resistance, ideal for applications requiring minimal power loss.