Model No: STGWA30IH65DF
STMicroelectronics STGWA30IH65DF
Manufacturer: STMicroelectronics
SEMICON NO.: STGWA30IH65DF
Package: TO-247-3
Stock: In stock
Description: IGBT TRENCH FS 650V 60A TO247
SEMICON NO.: STGWA30IH65DF
Package: TO-247-3
Stock: In stock
Description: IGBT TRENCH FS 650V 60A TO247
Quantity :
| Mfr | STMicroelectronics |
| Devices Type | IGBT (Discrete) |
| IGBT Type | Trench Gate Field-Stop |
| Input Type | Standard |
| Collector-Emitter Voltage (Vces) | 650V (Max) |
| Continuous Collector Current (Ic) | 60A (Max) |
| Pulsed Collector Current (Icm) | 90A (Max) |
| Gate-Emitter Voltage (Vge) | ±20V |
| Gate Threshold Voltage (Vge(th)) | 2.05V @ 15V, 30A |
| Gate Charge (Qg) | 80ns |
| Turn-Off Delay Time (Td(off)) | 200ns |
| Switching Energy (Eoff) | 123µJ (Turn-Off) |
| Max Power Dissipation (Pd) | 180W |
| Package/Sizes | TO-247-3 |
| Operating Temperature | -55°C to +175°C |
| Mounting Type | Through-Hole (THT) |
| RoHS Compliance | Yes |
ST IGBTSTGWA30IH65DF650V 30A IGBT
The STGWA30IH65DF is a high-performance Trench Gate Field-Stop IGBT (Insulated Gate Bipolar Transistor) designed by STMicroelectronics. It is part of the IH series, specifically optimized for soft-switching applications. This device features a maximum collector-emitter voltage (VCE) of 650V and a continuous collector current (IC) of up to 60A, making it suitable for high-power applications.
STGWA30IH65DF Features
The STGWA30IH65DF offers several key features that make it ideal for demanding power control applications. It has a low saturation voltage (VCE(sat)) of 1.55V (typical) at 30A, ensuring high efficiency and minimal power loss. The device is designed for soft commutation only, minimizing tail current and providing a tight parameter distribution for consistent performance. It also includes a built-in anti-parallel diode for enhanced functionality. The IGBT is housed in a TO-247 long leads package, which is suitable for through-hole mounting.
This IGBT operates within a junction temperature range of up to 175°C, ensuring reliability in high-temperature environments. It has a maximum gate-emitter voltage (VGE) of ±20V and a total gate charge (Qg) of 80nC (typical), which helps in reducing switching losses. The device also features a low output capacitance (Coes) of 82pF (typical), contributing to its high-speed switching capabilities.
Applications
TheSTGWA30IH65DF is widely used in applications requiring high power and efficient switching, such as motor drives, power supplies, and renewable energy systems. Its ability to handle high current and voltage makes it suitable for industrial and automotive applications where robustness and efficiency are critical.
High power IGBT Alternative models
● STGWA30H65DFB2: 650V, 30A IGBT with a TO-247 long leads package, similar to STGWA30IH65DF but may have slight differences in package marking.
● STGWA30M65DF2: 650V, 30A IGBT with low-loss characteristics, suitable for applications requiring minimal power dissipation.
● STGWA30N120KD: 1200V, 30A IGBT with an ultrafast diode, designed for high-voltage applications and short-circuit ruggedness.
The STGWA30IH65DF is a high-performance Trench Gate Field-Stop IGBT (Insulated Gate Bipolar Transistor) designed by STMicroelectronics. It is part of the IH series, specifically optimized for soft-switching applications. This device features a maximum collector-emitter voltage (VCE) of 650V and a continuous collector current (IC) of up to 60A, making it suitable for high-power applications.
STGWA30IH65DF Features
The STGWA30IH65DF offers several key features that make it ideal for demanding power control applications. It has a low saturation voltage (VCE(sat)) of 1.55V (typical) at 30A, ensuring high efficiency and minimal power loss. The device is designed for soft commutation only, minimizing tail current and providing a tight parameter distribution for consistent performance. It also includes a built-in anti-parallel diode for enhanced functionality. The IGBT is housed in a TO-247 long leads package, which is suitable for through-hole mounting.
This IGBT operates within a junction temperature range of up to 175°C, ensuring reliability in high-temperature environments. It has a maximum gate-emitter voltage (VGE) of ±20V and a total gate charge (Qg) of 80nC (typical), which helps in reducing switching losses. The device also features a low output capacitance (Coes) of 82pF (typical), contributing to its high-speed switching capabilities.
Applications
TheSTGWA30IH65DF is widely used in applications requiring high power and efficient switching, such as motor drives, power supplies, and renewable energy systems. Its ability to handle high current and voltage makes it suitable for industrial and automotive applications where robustness and efficiency are critical.
High power IGBT Alternative models
● STGWA30H65DFB2: 650V, 30A IGBT with a TO-247 long leads package, similar to STGWA30IH65DF but may have slight differences in package marking.
● STGWA30M65DF2: 650V, 30A IGBT with low-loss characteristics, suitable for applications requiring minimal power dissipation.
● STGWA30N120KD: 1200V, 30A IGBT with an ultrafast diode, designed for high-voltage applications and short-circuit ruggedness.
