Model No: SI7157DP-T1-GE3
Vishay Siliconix SI7157DP-T1-GE3
Manufacturer: Vishay Siliconix
SEMICON NO.: SI7157DP-T1-GE3
Package: PowerPAK® SO-8
Stock: In stock
Description: MOSFET P-Channel 20V 60A 6.25W
SEMICON NO.: SI7157DP-T1-GE3
Package: PowerPAK® SO-8
Stock: In stock
Description: MOSFET P-Channel 20V 60A 6.25W
Quantity :
| Mfr | Vishay Siliconix |
| Device Type | P-Channel Power MOSFET |
| Product Series | TrenchFET® Gen III |
| Drain-Source Voltage | -20 V (Max) |
| Gate-Source Voltage | ±12 V (Max) |
| Continuous Drain Current | -60 A @25℃ (Max) |
| Pulsed Drain Current | -300 A (Max) |
| Power Dissipation | 6.25, 104 W |
| Input Capacitance | 22 nF (Max) |
| Reverse Transfer Capacitance | 415 pF (Typ) |
| Forward Transconductance | 120 S (Min) |
| Operating Temperature | -55°C to +150°C |
| Package | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
The SI7157DP-T1-GE3 is a high-performance third-generation TrenchFET P-channel power MOSFET developed by Vishay Siliconix, packaged in compact PowerPAK SO-8 surface-mount housing. Rated for 20V drain-source voltage and 60A continuous drain current, this device features ultra-low 1.25mΩ maximum on-resistance, outstanding thermal conductivity and robust avalanche tolerance. It supports a wide operating temperature range from -55°C to 150°C, undergoes 100% Rg and UIS testing for reliable transient resistance, and delivers minimal conduction and switching losses. This high-current low-resistance MOSFET is optimized for high-efficiency power switching, load management and battery protection in industrial, automotive and consumer high-power embedded systems.
Key Features
● Advanced Gen III TrenchFET technology achieves ultra-low Rds(on) to drastically reduce power dissipation and thermal generation under heavy loads.
● High 60A continuous drain current and 104W maximum power dissipation support high-current power switching applications.
● Strict 100% Rg and UIS factory testing ensures superior avalanche and surge withstand capability for harsh working conditions.
● Low gate charge and optimized switching characteristics enable fast switching speed and high-frequency operation stability.
● Wide -55°C to 150°C operating temperature range adapts to extreme industrial and automotive temperature environments.
FAQ
Q: Is external gate resistor required for SI7157DP-T1-GE3?
A: A small gate resistor is recommended to suppress high-frequency oscillation. Ensure sufficient copper heat dissipation area; avoid long-time overcurrent operation to prevent thermal damage and performance degradation.
Alternative models
1. SI7156DP-T1-GE3: 20V P-channel MOSFET with slightly lower current rating and identical package, suitable for medium-current low-power switching scenarios.
2. AO4409: Common 20V high-current P-channel MOSFET with low on-resistance, serving as cost-effective cross-brand replacement for general power switching designs.
3. SI7158DP-T1-GE3: Upgraded high-current P-channel MOSFET with lower Rds(on), optimized for ultra-low loss high-current power supply systems.
Key Features
● Advanced Gen III TrenchFET technology achieves ultra-low Rds(on) to drastically reduce power dissipation and thermal generation under heavy loads.
● High 60A continuous drain current and 104W maximum power dissipation support high-current power switching applications.
● Strict 100% Rg and UIS factory testing ensures superior avalanche and surge withstand capability for harsh working conditions.
● Low gate charge and optimized switching characteristics enable fast switching speed and high-frequency operation stability.
● Wide -55°C to 150°C operating temperature range adapts to extreme industrial and automotive temperature environments.
FAQ
Q: Is external gate resistor required for SI7157DP-T1-GE3?
A: A small gate resistor is recommended to suppress high-frequency oscillation. Ensure sufficient copper heat dissipation area; avoid long-time overcurrent operation to prevent thermal damage and performance degradation.
Alternative models
1. SI7156DP-T1-GE3: 20V P-channel MOSFET with slightly lower current rating and identical package, suitable for medium-current low-power switching scenarios.
2. AO4409: Common 20V high-current P-channel MOSFET with low on-resistance, serving as cost-effective cross-brand replacement for general power switching designs.
3. SI7158DP-T1-GE3: Upgraded high-current P-channel MOSFET with lower Rds(on), optimized for ultra-low loss high-current power supply systems.
