Model No: AT45DB161E-SHD-T
Renesas Electronics Corporation AT45DB161E-SHD-T
Manufacturer: Renesas Electronics Corporation
SEMICON NO.: AT45DB161E-SHD-T
Package: 8-SOIC
Stock: In stock
Description: FLASH Memory IC 16Mbit SPI 85 MHz
SEMICON NO.: AT45DB161E-SHD-T
Package: 8-SOIC
Stock: In stock
Description: FLASH Memory IC 16Mbit SPI 85 MHz
Quantity :
| Mfr | Renesas Electronics Corporation |
| Device Type | 16-Mbit SPI Serial Flash Memory |
| Product Series | DataFlash |
| Memory Size | 16 Mbit (2 MByte) |
| Memory Organization | 528 Bytes × 4096 Pages |
| Memory Format | FLASH - NOR |
| Memory Type | Non-Volatile |
| Interface Type | SPI (Single SPI) |
| Max Clock Frequency | 85 MHz |
| Supply Voltage | 2.3 V to 3.6 V |
| Read Current (Typ) | 6 mA |
| Operating Temperature | -40°C to +85°C |
| Package | 8-SOIC |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
The AT45DB161E-SHD-T is a 16Mbit serial-interface DataFlash memory from Renesas Electronics (formerly Adesto/Atmel), featuring an advanced dual SRAM buffer architecture that makes it one of the most efficient memories for data logging applications. The device integrates 17,301,504 bits organized as 4,096 pages of 512/528 bytes each, along with two fully independent SRAM data buffers of 512/528 bytes enabling simultaneous read-while-write operation. Housed in an 8-SOIC package measuring 5.18mm x 7.70mm with 1.27mm pitch, this RoHS-compliant device operates across the -40°C to +85°C industrial temperature range with a longevity commitment through January 2034.
Key Features
- Dual SRAM data buffers (512/528 bytes each): Two fully independent buffers allow receiving data while reprogramming main memory, enabling continuous data stream writing without interruption
- Flexible page size configuration: User-configurable 512-byte or 528-byte (default) page sizes with factory pre-configuration option for 512-byte binary mode
- 85MHz maximum clock speed: Supports RapidS operation for high-speed data transfer with clock-to-output time of 6ns maximum
- Low-power read option up to 15MHz: Reduced power consumption for battery-powered applications
- Comprehensive erase architecture: Page Erase (512/528 bytes), Block Erase (4KB), Sector Erase (128KB), and Chip Erase options provide granular flexibility
- Program and Erase Suspend/Resume: Enables concurrent read operations during program/erase cycles for improved system responsiveness
- Ultra-deep power down mode: 0.4µA standby current dramatically extends battery life in portable applications
- Byte-write functionality: Provides Serial EEPROM emulation capability within a Serial NOR Flash device
- Advanced data protection: Individual sector protection and sector lockdown for permanent read-only operation, plus 128-byte OTP security register
- SPI modes 0 and 3 compatibility: Standard SPI interface ensures broad microcontroller compatibility
FAQ
Q: What is the primary advantage of the dual SRAM buffer architecture?
A: The dual buffers allow the system to write data to one buffer while programming the other to main memory, enabling continuous data logging without missing any incoming data stream.
Q: What distinguishes DataFlash from conventional SPI NOR Flash?
A: DataFlash features page-based architecture with built-in SRAM buffers and read-modify-write capability, eliminating the erase-before-write limitation of conventional NOR Flash and reducing processor overhead for byte-level updates.
Alternative Data Storage Solutions
Q: What is the primary advantage of the dual SRAM buffer architecture?
A: The dual buffers allow the system to write data to one buffer while programming the other to main memory, enabling continuous data logging without missing any incoming data stream.
Q: What distinguishes DataFlash from conventional SPI NOR Flash?
A: DataFlash features page-based architecture with built-in SRAM buffers and read-modify-write capability, eliminating the erase-before-write limitation of conventional NOR Flash and reducing processor overhead for byte-level updates.
Alternative Data Storage Solutions
- AT45DB161E-SHD-B (Renesas): The identical SOIC-W packaged device supplied in tube packaging rather than tape-and-reel for lower-volume production requirements.
- AT25SF161-SHB-T (Renesas): A 16Mbit SPI NOR Flash with standard page architecture (256-byte pages) offering cost-effective alternative for applications not requiring dual-buffer DataFlash functionality.
- W25Q16FVSSIG (Winbond): A 16Mbit SPI Flash with standard 4KB sector erase and 104MHz clock support providing high-speed alternative for code storage applications.
- S25FL116K0XFIW04 (Infineon/Cypress): A 16Mbit SPI NOR Flash with dual/quad I/O capability and uniform 4KB sector architecture for bandwidth-intensive applications.
