Diodes Incorporated 1N4448WS-7-F - Semicone IC Supplier

Mfr	Diodes Incorporated
Device Type	Fast Switching Diode
Peak Repetitive Reverse Voltage	75 V
DC Reverse Voltage	75 V
Average Rectified Forward Current	500 mA
Non-Repetitive Peak Forward Surge Current	4 A
Forward Voltage (Max)	1.25 V @ I_F = 150 mA
Reverse Recovery Time (Max)	4 ns
Reverse Leakage Current (Max)	2.5 µA @ V_R = 75 V
Diode Capacitance (Typ)	4 pF @ V_R = 0 V, f = 1 MHz
Operating Temperature	-65°C to +150°C
Package	SOD-323
Mounting Type	Surface Mount
Compliance	RoHS Compliant

The 1N4448WS-7-F is a surface-mount fast switching diode from Diodes Incorporated, engineered for general-purpose high-speed switching applications in compact electronic designs. Housed in the space-saving SOD-323 package, this silicon epitaxial planar diode delivers a 75V peak repetitive reverse voltage rating, 250mA average rectified output current, and ultra-fast 4ns reverse recovery time, making it ideal for signal routing, waveform clipping, and high-frequency circuit protection. Featuring low junction capacitance of 4pF maximum and a wide -65°C to +150°C operating temperature range, this diode provides reliable performance across consumer, industrial, and communication applications requiring fast switching speed in minimal board space.
Key Features

4ns reverse recovery time: Ultra-fast switching speed enables high-frequency operation in switching power supplies and digital logic circuits
75V peak repetitive reverse voltage: Adequate voltage blocking for signal-level and low-voltage power applications
250mA average rectified current: Sufficient current handling for signal processing and low-power rectification tasks
4A non-repetitive peak forward surge current: Robust surge tolerance protects against transient overcurrent conditions
Low 4pF junction capacitance: Minimal capacitive loading preserves signal integrity in high-speed circuits
200mW power dissipation rating: Adequate thermal performance for signal-level power dissipation

FAQ

Q: What distinguishes the 1N4448WS from the 1N4148WS?

A: The 1N4448WS offers slightly higher current capability (250mA vs 150mA for Taiwan Semi version) and lower forward voltage drop at low currents, while both share similar 75V reverse voltage and 4ns recovery time specifications.
Q: What is the forward voltage specification?
A: Forward voltage measures typically 0.62V at 5mA, with maximum values of 1.0V at 100mA and 1.25V at 250mA forward current.

Q: Is this device suitable for automotive applications?

A: The standard 1N4448WS-7-F is not automotive-qualified; AEC-Q101 automotive applications should use the 1N4448HWSQ variant with specific change control.

Alternative Small Signal Diode Models

1N4148WS-7-F (Diodes Incorporated): The widely-used alternative fast switching diode with similar 75V/4ns specifications but lower 150mA current rating for standard switching applications.
BAS16 (Nexperia): A general-purpose switching diode in SOT-23 package offering 75V voltage rating with equivalent switching speed for space-critical designs.
BAV99 (Nexperia): A dual-series configuration switching diode pair in SOT-23 providing two matched 70V diodes for single-package signal routing applications.
1N4448W-7-F (Diodes Incorporated): The through-hole DO-35 glass packaged variant offering identical electrical characteristics for applications requiring leaded components.