Model No: SGL160N60UFDTU
onsemi SGL160N60UFDTU
Manufacturer: onsemi
SEMICON NO.: SGL160N60UFDTU
Package: TO-264-3
Stock: In stock
Description: IC IGBT 600V 160A TO-264-3
SEMICON NO.: SGL160N60UFDTU
Package: TO-264-3
Stock: In stock
Description: IC IGBT 600V 160A TO-264-3
Quantity :
| Mfr | onsemi |
| Product Type | IGBT |
| Collector-Emitter Voltage (VCES) | 600 V |
| Continuous Collector Current (IC @ 25°C) | 160 A |
| Continuous Collector Current (IC @ 100°C) | 100 A |
| Max Pulsed Collector Current (ICM) | 320 A |
| Voltage Collector-Emitter Saturation (VCE(sat)) | 1.55 V (Typ) @ IC = 160A, VGE = 15V |
| Integrated Diode | Yes, Fast Recovery Epitaxial Diode (FRED) |
| Diode Forward Voltage (VFS) | 1.35 V (Typ) @ IF = 160A, VGE = 0V |
| Switching Speed | - Turn-On Delay (td(on)): 18 ns (Typ) - Turn-Off Delay (td(off)): 310 ns (Typ) |
| Gate Charge (Qg) | 220 nC (Typ) |
| Max Junction Temperature (Tj) | +175 °C |
| Package | TO-264-3 |
| Mounting Type | Surface Mount (SMD/SMT) |
| Compliance | RoHS Complian |
SGL160N60UFDTU Insulated Gate Bipolar Transistor 600V 160A IGBT
The SGL160N60UFDTU is a high-performance, ultrafast IGBT (Insulated Gate Bipolar Transistor) designed by onsemi (formerly Fairchild Semiconductor). It features a maximum collector-emitter voltage (VCE) of 600V and a continuous collector current (IC) of 160A. The device is designed for applications requiring high power switching and low conduction losses, making it suitable for motor control, UPS systems, and general inverters. It is available in a TO-264-3 package, which is ideal for through-hole mounting.
SGL160N60UFDTU IGBT Applications
● Motor Control: Ideal for controlling AC and DC motors in various industrial applications.
● UPS Systems: Suitable for uninterruptible power supply systems requiring high efficiency and reliability.
● General Inverters: Applicable in general-purpose inverters for power conversion tasks.
● Power Supplies: Used in high-power switching power supplies for efficient energy conversion.
AlternativeIGBT Models
When selecting an IGBT, consider factors such as voltage rating, current handling capability, switching speed, and package type. The SGL160N60UFDTU offers a balance of high voltage and current handling with ultrafast switching, making it suitable for applications requiring high efficiency and reliability.
● HGTG30N60A4: A 600V, 75A N-channel IGBT from Fairchild Semiconductor, offering similar performance characteristics but with a different current rating.
● IXGH15N120BD1: A 1200V, 30A N-channel IGBT from IXYS Corporation, suitable for high-voltage applications.
● MG150J1BS11: A high-power N-channel IGBT from Toshiba Semiconductor, designed for motor control and power switching applications.
● RJH60F7ADPK: A 600V, 90A N-channel IGBT from Renesas Electronics Corporation, offering high current handling and fast switching.
The SGL160N60UFDTU is a high-performance, ultrafast IGBT (Insulated Gate Bipolar Transistor) designed by onsemi (formerly Fairchild Semiconductor). It features a maximum collector-emitter voltage (VCE) of 600V and a continuous collector current (IC) of 160A. The device is designed for applications requiring high power switching and low conduction losses, making it suitable for motor control, UPS systems, and general inverters. It is available in a TO-264-3 package, which is ideal for through-hole mounting.
SGL160N60UFDTU IGBT Applications
● Motor Control: Ideal for controlling AC and DC motors in various industrial applications.
● UPS Systems: Suitable for uninterruptible power supply systems requiring high efficiency and reliability.
● General Inverters: Applicable in general-purpose inverters for power conversion tasks.
● Power Supplies: Used in high-power switching power supplies for efficient energy conversion.
AlternativeIGBT Models
When selecting an IGBT, consider factors such as voltage rating, current handling capability, switching speed, and package type. The SGL160N60UFDTU offers a balance of high voltage and current handling with ultrafast switching, making it suitable for applications requiring high efficiency and reliability.
● HGTG30N60A4: A 600V, 75A N-channel IGBT from Fairchild Semiconductor, offering similar performance characteristics but with a different current rating.
● IXGH15N120BD1: A 1200V, 30A N-channel IGBT from IXYS Corporation, suitable for high-voltage applications.
● MG150J1BS11: A high-power N-channel IGBT from Toshiba Semiconductor, designed for motor control and power switching applications.
● RJH60F7ADPK: A 600V, 90A N-channel IGBT from Renesas Electronics Corporation, offering high current handling and fast switching.
