Model No: MMBT3906
onsemi MMBT3906
Manufacturer: onsemi
SEMICON NO.: MMBT3906
Package: SOT-23-3
Stock: In stock
Description: TRANS PNP 40V 0.2A SOT-23-3
SEMICON NO.: MMBT3906
Package: SOT-23-3
Stock: In stock
Description: TRANS PNP 40V 0.2A SOT-23-3
Quantity :
| Mfr | onsemi |
| Devices Type | Bipolar Junction Transistor (BJT) - PNP General Purpose |
| Collector-Emitter Voltage | -40V |
| Collector Current | -200mA (Continuous) |
| DC Current Gain | 100–300 (min. 30 at 10mA, 1V) |
| Power Dissipation | 200mW–350mW |
| Transition Frequency | 250MHz–300MHz |
| Collector-Emitter Saturation Voltage | -300mV to -400mV |
| Package/Sizes | SOT-23-3 |
| Operating Temperature | -55°C to +150°C |
| Mounting Type | Surface Mount (SMD) |
| RoHS Compliance | Yes |
MMBT3906 PNP transistor, General-purpose switching transistor
The MMBT3906 is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It is widely used in modern electronics due to its high efficiency, compact size, and reliable performance. The MMBT3906 is available in a small SOT-23 package, making it ideal for surface-mount applications. This transistor is commonly used in conjunction with its NPN counterpart, the MMBT3904, to form complementary pairs in various electronic circuits.
Technical Specifications
The MMBT3906 features a maximum collector current (IC) of -200 mA and a collector-emitter voltage (VCEO) of -40 V, making it suitable for moderate power applications. It has a DC current gain (hFE) ranging from 100 to 300, providing effective amplification with minimal distortion. The transistor also supports a transition frequency (fT) of up to 250 MHz, ensuring high-speed operation. It operates within an ambient temperature range of -55°C to +150°C, making it suitable for a wide range of environmental conditions. Additionally, the MMBT3906 has a maximum power dissipation of 250 mW and an emitter-base voltage (VEBO) of -5 V.
Applications
The MMBT3906 is highly versatile and can be used in a variety of electronic circuits. It is commonly employed in switching circuits, where its high switching speed is advantageous for rapid on/off states. It is also used in low-power audio amplifiers and signal amplification circuits due to its high transition frequency. The MMBT3906 can be found in voltage regulator circuits, consumer electronics, and various control systems, providing reliable switching and amplification.
Ttransistor ic Alternative Models
● 2N3906: This is the through-hole version of the MMBT3906, available in a TO-92 package. It shares similar electrical characteristics and is suitable for general-purpose switching and amplification.
● MMBT3904: The NPN counterpart of the MMBT3906, often used in complementary pairs for switching and amplification applications.
● SMBT3906S: A variant with similar characteristics, suitable for applications requiring a small form factor.
● MMBT3906VL: Another variant with similar specifications, often used in applications requiring low power loss and high efficiency.
● PMBT3906: A PNP transistor with similar characteristics, suitable for general-purpose switching applications.
The MMBT3906 is a PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It is widely used in modern electronics due to its high efficiency, compact size, and reliable performance. The MMBT3906 is available in a small SOT-23 package, making it ideal for surface-mount applications. This transistor is commonly used in conjunction with its NPN counterpart, the MMBT3904, to form complementary pairs in various electronic circuits.
Technical Specifications
The MMBT3906 features a maximum collector current (IC) of -200 mA and a collector-emitter voltage (VCEO) of -40 V, making it suitable for moderate power applications. It has a DC current gain (hFE) ranging from 100 to 300, providing effective amplification with minimal distortion. The transistor also supports a transition frequency (fT) of up to 250 MHz, ensuring high-speed operation. It operates within an ambient temperature range of -55°C to +150°C, making it suitable for a wide range of environmental conditions. Additionally, the MMBT3906 has a maximum power dissipation of 250 mW and an emitter-base voltage (VEBO) of -5 V.
Applications
The MMBT3906 is highly versatile and can be used in a variety of electronic circuits. It is commonly employed in switching circuits, where its high switching speed is advantageous for rapid on/off states. It is also used in low-power audio amplifiers and signal amplification circuits due to its high transition frequency. The MMBT3906 can be found in voltage regulator circuits, consumer electronics, and various control systems, providing reliable switching and amplification.
Ttransistor ic Alternative Models
● 2N3906: This is the through-hole version of the MMBT3906, available in a TO-92 package. It shares similar electrical characteristics and is suitable for general-purpose switching and amplification.
● MMBT3904: The NPN counterpart of the MMBT3906, often used in complementary pairs for switching and amplification applications.
● SMBT3906S: A variant with similar characteristics, suitable for applications requiring a small form factor.
● MMBT3906VL: Another variant with similar specifications, often used in applications requiring low power loss and high efficiency.
● PMBT3906: A PNP transistor with similar characteristics, suitable for general-purpose switching applications.
