Model No: FDP083N15A-F102
onsemi FDP083N15A-F102
Manufacturer: onsemi
SEMICON NO.: FDP083N15A-F102
Package: TO-220-3
Stock: In stock
Description: N channel 150 V 83 A 294W
SEMICON NO.: FDP083N15A-F102
Package: TO-220-3
Stock: In stock
Description: N channel 150 V 83 A 294W
Quantity :
| Mfr | onsemi |
| Device Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage | 150 V |
| Continuous Drain Current | 117 A |
| Pulsed Drain Current | 468 A |
| Power Dissipation | 294 W |
| Gate-Source Voltage | ±20 V |
| Drain-Source On-Resistance(Max) | 8.3 mΩ |
| Drain-Source On-Resistance (Typ) | 6.85 mΩ |
| Gate Threshold Voltage (Max) | 4.0 V |
| Total Gate Charge (Typ) | 64.5 nC |
| Total Gate Charge (Max) | 84 nC |
| Input Capacitance (Typ) | 4645 pF |
| Input Capacitance (Max) | 6040 pF |
| Output Capacitance (Typ) | 1445 pF |
| Reverse Transfer Capacitance (Typ) | 100 pF |
| Operating Temperature | -55°C to +175°C |
| Package | TO-220-3 |
| Mounting Type | Through Hole |
| Compliance | RoHS Compliant |
FDP083N15A-F102 N-channel power MOSFET
The FDP083N15A-F102 from onsemi is a 150V N-channel PowerTrench power MOSFET optimized for very low on-resistance and robust high-current switching in server, telecom and industrial power conversion. It is rated for 150V VDS and up to 117A continuous drain current at 25°C case temperature, with a maximum RDS(on) of 8.3mΩ at VGS=10V, ID=75A and a typical RDS(on) of 6.85mΩ under the same conditions, which minimizes conduction losses in high-current synchronous rectification and OR-ing applications. The device achieves this through onsemi’s PowerTrench trench-gate technology, which reduces cell pitch and optimizes the vertical current path to simultaneously lower RDS(on) and gate charge, while maintaining a safe operating area and high avalanche energy capability.
Dynamic performance is supported by a typical gate charge of 64.5nC at VGS=10V and an input capacitance around 4.6nF, enabling fast switching transitions and moderate driving loss in medium-frequency hard-switched and soft-switched converters. The MOSFET is housed in a through-hole TO-220-3 package with a maximum power dissipation of 294W at Tc=25°C and a junction temperature range of -55°C to 175°C, making it suitable for high-density boards that require heatsinking and reliable operation under severe thermal cycling. Typical applications include ATX/server/telecom PSU synchronous rectification, battery protection, motor drives, UPS and micro-inverters, where low RDS(on) and high current handling directly improve efficiency and power density.
Alternative MOSFETs
● IRFB4321PBF: A 150V, 85A N-channel HEXFET power MOSFET from Infineon with 15mΩ max RDS(on) and 71nC typical gate charge in TO-220AB, offering robust high-current switching for motor drives and inverters where a slightly higher RDS(on) is acceptable.
● IPB083N10N3G: An Infineon OptiMOS 3 100V, 80A N-channel MOSFET in TO-263-3 with 8.3mΩ max RDS(on) and 55nC gate charge, optimized for high-efficiency synchronous rectification and DC-DC converters in telecom and datacom systems.
● STP80NF70: An STMicroelectronics STripFET II 68V, 98A N-channel MOSFET in TO-220 with 9.8mΩ max RDS(on) and 75nC gate charge, tailored for high-efficiency switching in 48V battery and industrial power applications.
Dynamic performance is supported by a typical gate charge of 64.5nC at VGS=10V and an input capacitance around 4.6nF, enabling fast switching transitions and moderate driving loss in medium-frequency hard-switched and soft-switched converters. The MOSFET is housed in a through-hole TO-220-3 package with a maximum power dissipation of 294W at Tc=25°C and a junction temperature range of -55°C to 175°C, making it suitable for high-density boards that require heatsinking and reliable operation under severe thermal cycling. Typical applications include ATX/server/telecom PSU synchronous rectification, battery protection, motor drives, UPS and micro-inverters, where low RDS(on) and high current handling directly improve efficiency and power density.
Alternative MOSFETs
● IRFB4321PBF: A 150V, 85A N-channel HEXFET power MOSFET from Infineon with 15mΩ max RDS(on) and 71nC typical gate charge in TO-220AB, offering robust high-current switching for motor drives and inverters where a slightly higher RDS(on) is acceptable.
● IPB083N10N3G: An Infineon OptiMOS 3 100V, 80A N-channel MOSFET in TO-263-3 with 8.3mΩ max RDS(on) and 55nC gate charge, optimized for high-efficiency synchronous rectification and DC-DC converters in telecom and datacom systems.
● STP80NF70: An STMicroelectronics STripFET II 68V, 98A N-channel MOSFET in TO-220 with 9.8mΩ max RDS(on) and 75nC gate charge, tailored for high-efficiency switching in 48V battery and industrial power applications.
