Model No: 2N7002KW
onsemi 2N7002KW
Manufacturer: onsemi
SEMICON NO.: 2N7002KW
Package: SOT-323
Stock: In stock
Description: N-channel MOSFET 60V 310mA (Ta) 350mW (Ta)
SEMICON NO.: 2N7002KW
Package: SOT-323
Stock: In stock
Description: N-channel MOSFET 60V 310mA (Ta) 350mW (Ta)
Quantity :
| Mfr | onsemi |
| FET Type | N-Channel |
| Drain-Source Voltage (Vdss) | 60 V |
| Continuous Drain Current (Id) | 310mA |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| On-Resistance (Rds(on) max) | 1.6Ω@10V |
| Total Power Dissipation (Pd) | 350mW |
| Operating Temperature | -55°C to +150°C |
| Package | SOT-323 |
| Mounting Type | Surface Mount (SMD/SMT) |
| Compliance | RoHS Compliant |
2N7002KW N-channel MOSFET Chip
The 2N7002KW is a high-performance, N-channel enhancement mode MOSFET designed for low-power applications. It features a drain-source breakdown voltage (VDS) of 60V and a continuous drain current (ID) of 340mA. This device is known for its low on-resistance (RDS(on)) and fast switching speed, making it suitable for a wide range of applications.
The 2N7002KW operates within a gate-source voltage (VGS) range of ±20V. It features a low gate threshold voltage (VGS(th)) of 1V to 2.5V at 1mA, ensuring efficient operation with minimal gate drive. The device has a maximum drain-source on-resistance (RDS(on)) of 2.5Ω at 500mA and 10V.
2N7002KW MOSFET Applications
The 2N7002KW is ideal for applications requiring low power consumption and high efficiency, such as portable devices, consumer electronics, and industrial controls. Its low on-resistance and fast switching speed make it suitable for applications like logic level translators, high-speed line drivers, and low-side load switches.
AlternativeN-channel MOSFETModels
● 2N7002KDW: A similar 60V N-channel MOSFET from Pan Jit International, offering comparable performance and features.
● 2N7002K-AU: A 60V N-channel MOSFET with similar specifications, suitable for applications requiring low on-resistance.
● NTJD4401N: A dual N-channel MOSFET from ON Semiconductor, offering similar voltage and current ratings, suitable for applications needing dual-channel switching.
The 2N7002KW is a high-performance, N-channel enhancement mode MOSFET designed for low-power applications. It features a drain-source breakdown voltage (VDS) of 60V and a continuous drain current (ID) of 340mA. This device is known for its low on-resistance (RDS(on)) and fast switching speed, making it suitable for a wide range of applications.
The 2N7002KW operates within a gate-source voltage (VGS) range of ±20V. It features a low gate threshold voltage (VGS(th)) of 1V to 2.5V at 1mA, ensuring efficient operation with minimal gate drive. The device has a maximum drain-source on-resistance (RDS(on)) of 2.5Ω at 500mA and 10V.
2N7002KW MOSFET Applications
The 2N7002KW is ideal for applications requiring low power consumption and high efficiency, such as portable devices, consumer electronics, and industrial controls. Its low on-resistance and fast switching speed make it suitable for applications like logic level translators, high-speed line drivers, and low-side load switches.
AlternativeN-channel MOSFETModels
● 2N7002KDW: A similar 60V N-channel MOSFET from Pan Jit International, offering comparable performance and features.
● 2N7002K-AU: A 60V N-channel MOSFET with similar specifications, suitable for applications requiring low on-resistance.
● NTJD4401N: A dual N-channel MOSFET from ON Semiconductor, offering similar voltage and current ratings, suitable for applications needing dual-channel switching.
