Model No: DMN2053U-7
Diodes Incorporated DMN2053U-7
Manufacturer: Diodes Incorporated
SEMICON NO.: DMN2053U-7
Package: SOT-23-3
Stock: In stock
Description: N-Channel MOSFET 20V 6.5A 800mW
SEMICON NO.: DMN2053U-7
Package: SOT-23-3
Stock: In stock
Description: N-Channel MOSFET 20V 6.5A 800mW
Quantity :
| Mfr | Diodes Incorporated |
| Device Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | 20 V (Max) |
| Gate-Source Voltage | ±12 V (Max) |
| Continuous Drain Current | 6.5 A (Max) |
| Pulsed Drain Current | 22 A (per TME) |
| Power Dissipation | 800 mW (Max) |
| Drain-Source On-Resistance | 29 mΩ (Max) |
| Gate Threshold Voltage | 1.2 V (Typ) |
| Gate Charge | 4.6 nC (Max) |
| Input Capacitance | 414 pF (Max) |
| Operating Temperature | –55°C to +150°C |
| Package | SOT-23-3 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
DMN2053U-7 is a single N-channel enhancement-mode power MOSFET from Diodes Incorporated, supplied in a 3-pin SOT23 (TO-236AB) surface-mount package on tape and reel. Rated for 20 V drain-source breakdown voltage with up to 6.5 A continuous drain current, it combines low on-state resistance around 26 mΩ at 4.5 V to 10 V gate drive with a low gate threshold of roughly 0.5 V to 1.2 V, an ESD-protected gate, fast switching speed and a compact footprint, making this low-voltage MOSFET ideal for load switching, level translation, battery protection and small power-management circuits in 3.3 V and 5 V embedded systems.
● 20 V VDSS rating with 6.5 A continuous drain current handles moderate load switching inside 12 V-free low-voltage boards.
● Very low Rds(on) near 26 mΩ minimizes conduction loss and heat generation during high-current on-state operation.
● Low Vgs(th) around 0.5 V to 1.2 V allows direct drive from 3.3 V or 5 V MCU GPIO without external gate drivers.
● ESD-protected gate and ±12 V maximum gate-source voltage improve reliability against static and drive overshoot.
● Fast switching with low gate charge supports efficient load switching and small-signal level translation.
● Very low Rds(on) near 26 mΩ minimizes conduction loss and heat generation during high-current on-state operation.
● Low Vgs(th) around 0.5 V to 1.2 V allows direct drive from 3.3 V or 5 V MCU GPIO without external gate drivers.
● ESD-protected gate and ±12 V maximum gate-source voltage improve reliability against static and drive overshoot.
● Fast switching with low gate charge supports efficient load switching and small-signal level translation.
This N-channel MOSFET serves a broad set of low-voltage switching roles: GPIO-driven load switches for LEDs, relays, solenoids and small motors; battery pack protection and charge/discharge switches in portable devices; 3.3 V to 5 V bidirectional level shifting between MCUs and sensors; power distribution and load disconnect in USB-powered boards; synchronous or low-side switching in buck converters and boost chargers; peripheral power gating, reverse-current blocking and small signal relay drivers in consumer electronics, handheld instruments and industrial control modules.
Alternative logic-level MOSFET models
● DMN2053UVT-7: Dual 20 V N-channel MOSFET in TSOT26 for dual-channel load switching with shared compact routing.
● DMN2056U: Same SOT23 20 V family member with slightly higher Rds(on) for cost-sensitive lower-current switching jobs.
● AO3400A: Industry-standard 30 V N-channel SOT23 MOSFET with similar logic-level drive for cross-brand replacement.
● BSS138-7: Common small-signal N-channel switch for lower-current level translation and signal gating designs.
● DMN2053UVT-7: Dual 20 V N-channel MOSFET in TSOT26 for dual-channel load switching with shared compact routing.
● DMN2056U: Same SOT23 20 V family member with slightly higher Rds(on) for cost-sensitive lower-current switching jobs.
● AO3400A: Industry-standard 30 V N-channel SOT23 MOSFET with similar logic-level drive for cross-brand replacement.
● BSS138-7: Common small-signal N-channel switch for lower-current level translation and signal gating designs.
Core parameters : 20 V VDSS, 6.5 A continuous drain, SOT23-3 tape & reel, ~26 mΩ Rds(on), 0.5-1.2 V gate threshold, ESD-protected gate.
