Model No: IRFR3707ZTRPBF
Infineon Technologies IRFR3707ZTRPBF
Manufacturer: Infineon Technologies
SEMICON NO.: IRFR3707ZTRPBF
Package: TO-252-3 (DPAK)
Stock: In stock
Description: MOSFET 1 N-CH HEXFET 30V 56A 50W
SEMICON NO.: IRFR3707ZTRPBF
Package: TO-252-3 (DPAK)
Stock: In stock
Description: MOSFET 1 N-CH HEXFET 30V 56A 50W
Quantity :
| Mfr | Infineon Technologies |
| Product Series | HEXFET® |
| Device Type | Single N-Channel Power MOSFET |
| Drain-Source Voltage | 30 V (Max) |
| Continuous Drain Current | 56 A (Max) |
| Power Dissipation | 50 W (Max) |
| Gate-Source Voltage | ±20 V (Max) |
| Drain-Source On-Resistance | 9.5 mΩ (Max) |
| Gate Threshold Voltage | 2.25 V @ 25 µA (Max) |
| Gate Charge | 14 nC @ 4.5 V (Max) |
| Input Capacitance | 1150 pF @ 15 V (Max) |
| Drive Voltage Range | 4.5 V / 10 V (Min/Max) |
| Operating Temperature | –55°C to +175°C |
| Package | TO-252-3 (DPAK) |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
The IRFR3707ZTRPBF is a 30 V N-channel HEXFET power MOSFET from Infineon (originally International Rectifier), supplied in a surface-mount D-Pak TO-252AA package on tape and reel. It delivers 56 A continuous drain current at Tc = 25°C, maximum on-resistance of 9.5 mΩ at Vgs = 10 V and 12.5 mΩ at Vgs = 4.5 V, typical gate charge of 9.6 nC at 4.5 V with only 3.5 nC gate-drain charge, and a fast-recovery integrated body diode, combining very low conduction loss with minimal switching loss for high-frequency synchronous rectification and point-of-load conversion. Rated for ±20 V gate drive, 50 W power dissipation at case temperature and a -55°C to +175°C junction range, this RoHS Pb-free device targets dense 12 V to low-voltage power rails in computing, telecom and industrial systems.
● Ultra-low Rds(on) of 9.5 mΩ at 10 V and 12.5 mΩ at 4.5 V minimizes conduction losses in high-current synchronous switches.
● Low total gate charge (9.6 nC typ) and low Qgd (3.5 nC) cut gate drive effort and switching losses at high operating frequencies.
● Fast intrinsic body diode with 25 ns typical reverse recovery time suits synchronous rectifier commutation.
● 56 A continuous drain and 50 W Pd rating support robust high-current board-level power delivery.
● Fully characterized avalanche voltage and current plus a rugged body diode improve transient and fault withstand.
● Low total gate charge (9.6 nC typ) and low Qgd (3.5 nC) cut gate drive effort and switching losses at high operating frequencies.
● Fast intrinsic body diode with 25 ns typical reverse recovery time suits synchronous rectifier commutation.
● 56 A continuous drain and 50 W Pd rating support robust high-current board-level power delivery.
● Fully characterized avalanche voltage and current plus a rugged body diode improve transient and fault withstand.
This MOSFET is designed for high-efficiency power conversion roles: high-frequency synchronous buck converters for computer processor and core power rails; isolated DC-DC converters using synchronous rectification for telecom and industrial equipment; low-side or high-side switches in 12 V distributed power; battery management and load switches in telecom power modules; POL regulators, OR-ing and hot-swap functions; and motor or solenoid drive in compact industrial control hardware.
Alternative N-channel MOSFET models
1. IRFR3707ZTRLPBF: Same 30 V HEXFET in D-Pak with an alternative leaded packaging code for drop-in compatibility in existing assemblies.
2. IRLR3707ZTRPBF: Logic-level 30 V variant with lower threshold for direct 4.5 V gate drive in gentle switching designs.
3. BSC030N04LS6: Infineon OptiMOS 40 V modern-generation FET with lower Qg for upgraded synchronous buck and telecom rectifier designs.
4. AOD514: Alpha & Omega 30 V N-channel D-Pak FET as a cross-brand replacement for standard 12 V load switching.
1. IRFR3707ZTRLPBF: Same 30 V HEXFET in D-Pak with an alternative leaded packaging code for drop-in compatibility in existing assemblies.
2. IRLR3707ZTRPBF: Logic-level 30 V variant with lower threshold for direct 4.5 V gate drive in gentle switching designs.
3. BSC030N04LS6: Infineon OptiMOS 40 V modern-generation FET with lower Qg for upgraded synchronous buck and telecom rectifier designs.
4. AOD514: Alpha & Omega 30 V N-channel D-Pak FET as a cross-brand replacement for standard 12 V load switching.
Core parameters : 30 V VDSS, 56 A continuous, 9.5 mΩ/12.5 mΩ Rds(on), 9.6 nC Qg, fast body diode, D-Pak TO-252AA.
