Model No: PSMN1R2-30YLDX
Nexperia USA Inc. PSMN1R2-30YLDX
Manufacturer: Nexperia USA Inc.
SEMICON NO.: PSMN1R2-30YLDX
Package: LFPAK56 (Power-SO8)
Stock: In stock
Description: Power MOSFET Logic Gate 30 V 250 A
SEMICON NO.: PSMN1R2-30YLDX
Package: LFPAK56 (Power-SO8)
Stock: In stock
Description: Power MOSFET Logic Gate 30 V 250 A
Quantity :
| Mfr | Nexperia USA Inc. |
| Device Type | N-Channel Enhancement Mode Power MOSFET |
| Gate Drive | Logic Level |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) @ 25°C | 250 A |
| Power Dissipation (PD) | 194 W |
| Gate-Source Voltage (VGS) | ±20 V |
| Operating Temperature | -55°C to +175°C |
| Package | LFPAK56 (Power-SO8) |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
PSMN1R2-30YLDX logic level power MOSFET
The PSMN1R2-30YLDX, a high-performance N-channel trenchMOS® logic level power MOSFET from Nexperia, is housed in a thermally efficient LFPAK56 (Power-SO8) surface-mount package. Rated for a 30 V drain-source breakdown voltage, it supports a continuous drain current of 99 A at 25°C case temperature, with an ultra-low maximum on-resistance (Rds(on)) of only 1.2 mΩ at a 4.5 V gate drive voltage, drastically reducing power dissipation and improving overall converter efficiency in low-voltage high-current switching circuits. Its key electrical parameters include a typical total gate charge (Qg) of 85 nC at 10 V Vgs, a typical input capacitance (Ciss) of 3200 pF, a low gate threshold voltage of 1.0 V minimum, and a ±20 V maximum gate-source voltage rating, enabling fast, stable switching with minimal gate drive power consumption. It operates reliably across an extended -55°C to 175°C junction temperature range, with a maximum power dissipation of 45 W at 25°C, and exhibits fast dynamic switching characteristics: a 15 ns typical turn-on delay, 8 ns typical rise time, 27 ns typical turn-off delay and 7 ns typical fall time, making it perfectly suited for synchronous buck converters, motor drive circuits, battery management systems, power distribution modules, server VRMs and automotive DC-DC converters that demand high efficiency, high current capability and reliable operation under demanding thermal conditions.
Alternative logic level MOSFETs
● IPT015N10N5 by Infineon: An N-channel 100 V 150 A power MOSFET in TO-247 package with 1.5 mΩ maximum Rds(on), optimized for high-power industrial motor drives and server power supplies.
● IRFH7914TRPBF by Infineon: An N-channel 40 V 120 A power MOSFET in DirectFET package with 1.4 mΩ maximum Rds(on), designed for high-frequency, high-density synchronous buck converters in computing applications.
● AONR21357 by Alpha & Omega Semiconductor: An N-channel 30 V 150 A power MOSFET in DFN 5x6 package with 1.35 mΩ maximum Rds(on), ideal for low-voltage high-current point-of-load (POL) converters.
The PSMN1R2-30YLDX, a high-performance N-channel trenchMOS® logic level power MOSFET from Nexperia, is housed in a thermally efficient LFPAK56 (Power-SO8) surface-mount package. Rated for a 30 V drain-source breakdown voltage, it supports a continuous drain current of 99 A at 25°C case temperature, with an ultra-low maximum on-resistance (Rds(on)) of only 1.2 mΩ at a 4.5 V gate drive voltage, drastically reducing power dissipation and improving overall converter efficiency in low-voltage high-current switching circuits. Its key electrical parameters include a typical total gate charge (Qg) of 85 nC at 10 V Vgs, a typical input capacitance (Ciss) of 3200 pF, a low gate threshold voltage of 1.0 V minimum, and a ±20 V maximum gate-source voltage rating, enabling fast, stable switching with minimal gate drive power consumption. It operates reliably across an extended -55°C to 175°C junction temperature range, with a maximum power dissipation of 45 W at 25°C, and exhibits fast dynamic switching characteristics: a 15 ns typical turn-on delay, 8 ns typical rise time, 27 ns typical turn-off delay and 7 ns typical fall time, making it perfectly suited for synchronous buck converters, motor drive circuits, battery management systems, power distribution modules, server VRMs and automotive DC-DC converters that demand high efficiency, high current capability and reliable operation under demanding thermal conditions.
Alternative logic level MOSFETs
● IPT015N10N5 by Infineon: An N-channel 100 V 150 A power MOSFET in TO-247 package with 1.5 mΩ maximum Rds(on), optimized for high-power industrial motor drives and server power supplies.
● IRFH7914TRPBF by Infineon: An N-channel 40 V 120 A power MOSFET in DirectFET package with 1.4 mΩ maximum Rds(on), designed for high-frequency, high-density synchronous buck converters in computing applications.
● AONR21357 by Alpha & Omega Semiconductor: An N-channel 30 V 150 A power MOSFET in DFN 5x6 package with 1.35 mΩ maximum Rds(on), ideal for low-voltage high-current point-of-load (POL) converters.
