Model No: IPL60R075CFD7
Infineon Technologies IPL60R075CFD7
Manufacturer: Infineon Technologies
SEMICON NO.: IPL60R075CFD7
Package: PG-VSON-4
Stock: In stock
Description: N channel 600 V 33 A (Tc) 189W (Tc)
SEMICON NO.: IPL60R075CFD7
Package: PG-VSON-4
Stock: In stock
Description: N channel 600 V 33 A (Tc) 189W (Tc)
Quantity :
| Mfr | Infineon Technologies |
| Product Family | CoolMOS™ CFD7 |
| Device Type | N-Channel Power MOSFET |
| Drain-Source Voltage (VDSS) | 600 V |
| Continuous Drain Current (ID) | 33 A |
| Drain-Source On-Resistance (RDS(on)) | 66 mΩ typ, 67.5 mΩ max |
| Gate Charge (Qg) | 67 nC @ 10V |
| Input Capacitance (Ciss) | 2721 pF |
| Reverse Transfer Capacitance (Crss) | 53 pF |
| Gate-Source Threshold Voltage (VGS(th)) | 3.5 V (typ) / 4.0 V (max) |
| Operating Temperature | -40°C to +150°C |
| Package | PG-VSON-4 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
IPL60R075CFD7 600V N-channel power MOSFET
The IPL60R075CFD7 from Infineon Technologies is a 600V, N-channel superjunction (SJ) power MOSFET belonging to the advanced CoolMOS™ CFD7 series. Housed in a compact ThinPAK 8x8 (PG-VSON-4) surface-mount package, this device is engineered for high-efficiency power conversion in demanding industrial and automotive environments. It features a remarkably low maximum on-state resistance (RDS(on)of 75 mΩ at 10V gate drive) and a continuous drain current rating of 33 A, enabling high power density by minimizing conduction losses. A key differentiator of the CFD7 platform is its integrated ultra-fast body diode, specifically optimized for soft-switching and resonant topologies where low reverse recovery charge (Qrr) is critical for reducing switching losses and improving EMI performance.
The IPL60R075CFD7 is the preferred choice for high-power, high-frequency switch-mode power supplies (SMPS) and energy-efficient converters. Its primary application areas include server & telecom power systems (especially LLC resonant converters and PFC stages), EV charging stations, industrial motor drives, solar inverters, and welding equipment. It is also widely used in 48V DC-DC conversion systems for data centers and automotive applications, where its low RDS(on)and fast switching capabilities maximize overall system efficiency.
Alternative MOSFET Numbers
● IPL60R060CFD7 (Infineon): A lower RDS(on)(60 mΩ) variant from the same CFD7 family, offering even lower conduction losses for ultra-high efficiency designs.
● STP65N75DM2 (STMicroelectronics): A 600V / 75mΩ MDmesh™ DM2 series MOSFET in a TO-220 package, providing a robust through-hole alternative for prototyping or high-power linear applications.
● NTP65N075 (onsemi): A 600V / 75mΩ Super-Junction MOSFET in a TO-220F package, featuring low gate charge and fast switching speed suitable for SMPS and lighting ballasts.
● SiHG65N75E (Vishay): A 600V / 75mΩ E-Series power MOSFET offering a good balance of low RDS(on)and low Qgfor high-frequency power conversion.
The IPL60R075CFD7 from Infineon Technologies is a 600V, N-channel superjunction (SJ) power MOSFET belonging to the advanced CoolMOS™ CFD7 series. Housed in a compact ThinPAK 8x8 (PG-VSON-4) surface-mount package, this device is engineered for high-efficiency power conversion in demanding industrial and automotive environments. It features a remarkably low maximum on-state resistance (RDS(on)of 75 mΩ at 10V gate drive) and a continuous drain current rating of 33 A, enabling high power density by minimizing conduction losses. A key differentiator of the CFD7 platform is its integrated ultra-fast body diode, specifically optimized for soft-switching and resonant topologies where low reverse recovery charge (Qrr) is critical for reducing switching losses and improving EMI performance.
The IPL60R075CFD7 is the preferred choice for high-power, high-frequency switch-mode power supplies (SMPS) and energy-efficient converters. Its primary application areas include server & telecom power systems (especially LLC resonant converters and PFC stages), EV charging stations, industrial motor drives, solar inverters, and welding equipment. It is also widely used in 48V DC-DC conversion systems for data centers and automotive applications, where its low RDS(on)and fast switching capabilities maximize overall system efficiency.
Alternative MOSFET Numbers
● IPL60R060CFD7 (Infineon): A lower RDS(on)(60 mΩ) variant from the same CFD7 family, offering even lower conduction losses for ultra-high efficiency designs.
● STP65N75DM2 (STMicroelectronics): A 600V / 75mΩ MDmesh™ DM2 series MOSFET in a TO-220 package, providing a robust through-hole alternative for prototyping or high-power linear applications.
● NTP65N075 (onsemi): A 600V / 75mΩ Super-Junction MOSFET in a TO-220F package, featuring low gate charge and fast switching speed suitable for SMPS and lighting ballasts.
● SiHG65N75E (Vishay): A 600V / 75mΩ E-Series power MOSFET offering a good balance of low RDS(on)and low Qgfor high-frequency power conversion.
