Model No: IRFR5410TRPBF
Infineon Technologies IRFR5410TRPBF
Manufacturer: Infineon Technologies
SEMICON NO.: IRFR5410TRPBF
Package: TO-252AA (DPAK)
Stock: In stock
Description: Power MOSFET P-Ch 20V 66W 205mΩ
SEMICON NO.: IRFR5410TRPBF
Package: TO-252AA (DPAK)
Stock: In stock
Description: Power MOSFET P-Ch 20V 66W 205mΩ
Quantity :
| Mfr | Infineon Technologies |
| Device Type | Single P-Channel Power MOSFET |
| Drain-Source Voltage (Max) | –100 V |
| Gate-Source Voltage (Max) | ±20 V |
| Continuous Drain Current (Max) | –13 A |
| Pulsed Drain Current (Max) | –52 A |
| Power Dissipation (Max) | 66 W |
| Drain-Source On-Resistance (Max) | 205 mΩ |
| Gate Threshold Voltage Range | –2 V to –4 V |
| Total Gate Charge (Typ) | 38.7 nC |
| Gate-Drain Charge | 21.3 nC |
| Input Capacitance (Max) | 760 pF |
| Operating Temperature | –55°C to +150°C |
| Package | TO-252AA (DPAK) |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
The IRFR5410TRPBF is a -100V P-channel enhancement-mode HEXFET power MOSFET from Infineon Technologies (formerly International Rectifier), engineered for high-side switching and load-switch applications up to switching frequencies below 100kHz. Built on fifth-generation HEXFET processing, this P-channel MOSFET delivers a continuous drain current of -13A, a maximum on-resistance of 205mΩ at VGS = -10V, and 66W power dissipation, with a total gate charge of 58nC enabling efficient drive in linear and switching regimes. Fully avalanche rated with a 194mJ single-pulse avalanche energy tolerance, the device ships in an industry-standard DPAK (TO-252-3) surface-mount package with tape-and-reel packing (TR suffix), operating from -55°C to +150°C and featuring fast switching with 58ns rise and 46ns fall times typical.
Infineon HEXFET transistor Applications
● High-side load switches in automotive and industrial power distribution, where P-channel topology eliminates the need for gate-drive transformers or bootstrap diodes.
● DC-DC converters and switching power supplies operating below 100kHz switching frequency.
● Motor control circuits and H-bridge complementary configurations requiring rugged -100V P-channel devices.
● Audio amplifier output stages and Class-AB power stages benefiting from wide safe operating area (SOA).
● Hot-swap and inrush-current-limiting controllers in server and telecom power paths.
● Battery-powered load switches and reverse-polarity protection in portable systems.
FAQs
Q: Why choose P-channel IRFR5410 over N-channel in high-side switching? A: The P-channel device allows the source to connect directly to the positive supply, so the gate can be pulled to ground to turn it on - eliminating bootstrap circuits or charge pumps required with N-channel high-side switches.
Q: Is this MOSFET suitable for switching above 100kHz? A: No - Infineon specifies this device optimized for frequencies below 100kHz, since the 58nC gate charge and 760pF input capacitance increase drive losses at higher frequencies.
Q: Can IRFR5410 replace IRFR5305? A: No direct substitution - the IRFR5410 is -100V/13A while IRFR5305 is -55V/31A, so verify voltage and current margins before interchange.
Alternative power MOSFET Models
● IRFR5305TRPBF: A -55V, -31A P-channel DPAK MOSFET with lower 65mΩ RDS(ON) for lower-voltage, higher-current high-side switch designs.
● IRFR5210TRPBF: A -100V, -9.4A sibling with lower current capability for moderate-power P-channel switching in the same DPAK package.
● IRFR9310: A Vishay -400V, -1.8A P-channel DPAK MOSFET for high-voltage, low-current applications requiring greater drain-source headroom.
● AUIRFR5410TRR: The automotive-grade AEC-Q101-qualified version of the same die for under-hood and automotive power-distribution systems.
● IRFR9328TRPBF: An Infineon SOIC-8 P-channel MOSFET for space-constrained designs where DPAK thermal performance is not required.
● High-side load switches in automotive and industrial power distribution, where P-channel topology eliminates the need for gate-drive transformers or bootstrap diodes.
● DC-DC converters and switching power supplies operating below 100kHz switching frequency.
● Motor control circuits and H-bridge complementary configurations requiring rugged -100V P-channel devices.
● Audio amplifier output stages and Class-AB power stages benefiting from wide safe operating area (SOA).
● Hot-swap and inrush-current-limiting controllers in server and telecom power paths.
● Battery-powered load switches and reverse-polarity protection in portable systems.
FAQs
Q: Why choose P-channel IRFR5410 over N-channel in high-side switching? A: The P-channel device allows the source to connect directly to the positive supply, so the gate can be pulled to ground to turn it on - eliminating bootstrap circuits or charge pumps required with N-channel high-side switches.
Q: Is this MOSFET suitable for switching above 100kHz? A: No - Infineon specifies this device optimized for frequencies below 100kHz, since the 58nC gate charge and 760pF input capacitance increase drive losses at higher frequencies.
Q: Can IRFR5410 replace IRFR5305? A: No direct substitution - the IRFR5410 is -100V/13A while IRFR5305 is -55V/31A, so verify voltage and current margins before interchange.
Alternative power MOSFET Models
● IRFR5305TRPBF: A -55V, -31A P-channel DPAK MOSFET with lower 65mΩ RDS(ON) for lower-voltage, higher-current high-side switch designs.
● IRFR5210TRPBF: A -100V, -9.4A sibling with lower current capability for moderate-power P-channel switching in the same DPAK package.
● IRFR9310: A Vishay -400V, -1.8A P-channel DPAK MOSFET for high-voltage, low-current applications requiring greater drain-source headroom.
● AUIRFR5410TRR: The automotive-grade AEC-Q101-qualified version of the same die for under-hood and automotive power-distribution systems.
● IRFR9328TRPBF: An Infineon SOIC-8 P-channel MOSFET for space-constrained designs where DPAK thermal performance is not required.
