Model No: IPD30N10S3L-34
Infineon Technologies IPD30N10S3L-34
Manufacturer: Infineon Technologies
SEMICON NO.: IPD30N10S3L-34
Package: PG-TO-252-3-11 (DPAK)
Stock: In stock
Description: Power MOSFET N-Channel 100 V 30 A
SEMICON NO.: IPD30N10S3L-34
Package: PG-TO-252-3-11 (DPAK)
Stock: In stock
Description: Power MOSFET N-Channel 100 V 30 A
Quantity :
| Mfr | Infineon Technologies |
| Device Type | N-Channel Enhancement Mode Power MOSFET |
| Product Family / Technology | OptiMOS™-T |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) @ 25°C | 30 A |
| Pulsed Drain Current (IDM) | 180 A |
| Gate-Source Voltage (VGS) | ±20 V |
| Power Dissipation (PD) | 57 W |
| Operating Temperature | -55°C to +175°C |
| Package | PG-TO-252-3-11 (DPAK) |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
IPD30N10S3L-34 Infineon OptiMOS N-channel MOSFET
The IPD30N10S3L-34, a high-performance N-channel enhancement-mode power MOSFET from Infineon's OptiMOS™ series, is housed in a compact PG-TO252-3-11 (DPAK) surface-mount package, delivering exceptional power efficiency and rugged reliability for automotive and industrial power management applications. Rated for a 100 V drain-source breakdown voltage, it supports a continuous drain current of 30 A at 25°C case temperature, with a maximum on-resistance (Rds(on)) of only 31 mΩ at 4.5 V gate drive voltage, drastically minimizing conduction losses in low-voltage high-current switching circuits.
This AEC-Q101 automotive-qualified MOSFET is fully RoHS-compliant, 100% avalanche-tested for unclamped inductive load scenarios, and features an MSL 1 moisture sensitivity rating that allows up to 260°C peak reflow soldering without special pre-drying requirements. It operates reliably across an extended -55°C to 175°C junction temperature range, with a maximum power dissipation of 57 W at 25°C, and exhibits extremely short dynamic switching timings: a 6 ns typical turn-on delay, 4 ns typical rise time, 18 ns typical turn-off delay and 3 ns typical fall time, making it perfectly suited for high-frequency DC-DC converters, automotive body electronics, motor drive circuits, load switches, battery management systems, power distribution modules and industrial power supplies that demand consistent performance under harsh operating conditions.
Alternative power MOSFEs
1. NTD3055L174 by onsemi: An N-channel 60 V 55 A power MOSFET in TO-252 package with 14 mΩ maximum Rds(on), AEC-Q101 qualified and optimized for automotive low-side switching and motor control applications.
2. AO4407A by Alpha & Omega Semiconductor: A P-channel -30 V -12 A power MOSFET in SO-8 package with 28 mΩ maximum Rds(on), designed for low-voltage battery protection and load switch circuits in portable electronics.
3. IRFR7440TRPBF by Infineon: An N-channel 40 V 40 A power MOSFET in DPAK package with 4.2 mΩ maximum Rds(on), featuring low gate charge and high avalanche ruggedness for high-current DC-DC converter designs.
The IPD30N10S3L-34, a high-performance N-channel enhancement-mode power MOSFET from Infineon's OptiMOS™ series, is housed in a compact PG-TO252-3-11 (DPAK) surface-mount package, delivering exceptional power efficiency and rugged reliability for automotive and industrial power management applications. Rated for a 100 V drain-source breakdown voltage, it supports a continuous drain current of 30 A at 25°C case temperature, with a maximum on-resistance (Rds(on)) of only 31 mΩ at 4.5 V gate drive voltage, drastically minimizing conduction losses in low-voltage high-current switching circuits.
This AEC-Q101 automotive-qualified MOSFET is fully RoHS-compliant, 100% avalanche-tested for unclamped inductive load scenarios, and features an MSL 1 moisture sensitivity rating that allows up to 260°C peak reflow soldering without special pre-drying requirements. It operates reliably across an extended -55°C to 175°C junction temperature range, with a maximum power dissipation of 57 W at 25°C, and exhibits extremely short dynamic switching timings: a 6 ns typical turn-on delay, 4 ns typical rise time, 18 ns typical turn-off delay and 3 ns typical fall time, making it perfectly suited for high-frequency DC-DC converters, automotive body electronics, motor drive circuits, load switches, battery management systems, power distribution modules and industrial power supplies that demand consistent performance under harsh operating conditions.
Alternative power MOSFEs
1. NTD3055L174 by onsemi: An N-channel 60 V 55 A power MOSFET in TO-252 package with 14 mΩ maximum Rds(on), AEC-Q101 qualified and optimized for automotive low-side switching and motor control applications.
2. AO4407A by Alpha & Omega Semiconductor: A P-channel -30 V -12 A power MOSFET in SO-8 package with 28 mΩ maximum Rds(on), designed for low-voltage battery protection and load switch circuits in portable electronics.
3. IRFR7440TRPBF by Infineon: An N-channel 40 V 40 A power MOSFET in DPAK package with 4.2 mΩ maximum Rds(on), featuring low gate charge and high avalanche ruggedness for high-current DC-DC converter designs.
