Model No: BGB741L7ESDE6327
Infineon Technologies BGB741L7ESDE6327
Manufacturer: Infineon Technologies
SEMICON NO.: BGB741L7ESDE6327
Package: PG-TSLP-7-1
Stock: In stock
Description: LNA MMIC 1.8 V to 4 V 30 mA
SEMICON NO.: BGB741L7ESDE6327
Package: PG-TSLP-7-1
Stock: In stock
Description: LNA MMIC 1.8 V to 4 V 30 mA
Quantity :
| Mfr | Infineon Technologies |
| Device Type | Low Noise Amplifier (LNA) MMIC |
| Frequency Range | 30 MHz to 5 GHz |
| Test Frequency | 1.5 GHz |
| Gain (Typical) | 19 dB to 21.5 dB |
| Noise Figure (Typical) | 1 dB to 1.8 dB |
| P1dB | -6.5 dBm |
| High RF Input Power Robustness | 20 dBm |
| Supply Voltage | 1.8 V to 4 V |
| Supply Current | 30 mA (Typical) |
| Operating Temperature | -55°C to +150°C |
| Package | PG-TSLP-7-1 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
BGB741L7ESDE6327 LNA MMIC
The BGB741L7ESDE6327 is a high-performance broadband low-noise amplifier (LNA) MMIC developed by Infineon Technologies, targeting RF front-end applications from 50 MHz up to 3.5 GHz. Fabricated in Infineon's silicon-germanium carbon (SiGe:C) bipolar process, this device is internally matched to 50 Ω, which greatly simplifies system integration and reduces the need for additional RF matching components. Housed in a compact TSLP-7-1 package, it is optimized for space-constrained modules in mobile and industrial RF designs.
This LNA MMIC combines low noise figure with high gain and robust RF power handling, delivering a minimum noise figure as low as 1.05 dB at 2.4 GHz under optimal source matching conditions. It operates from a supply voltage of 1.8 V to 4.0 V and typically consumes around 5–10 mA in on-mode, while achieving a deep power-down current in the microampere range, which is essential for battery-powered systems. The device provides a transducer gain of around 17–21 dB across frequency bands such as 900 MHz, 1.9 GHz, and 2.4 GHz, along with good input and output return loss, enabling easy integration in 50 Ω environments. An integrated on/off control pin allows fast enable/disable sequencing, and an external resistor can be used to adjust the bias current for performance optimization. The chip also features high RF input power robustness up to 20 dBm and integrated ESD protection up to 2 kV HBM on all pins, enhancing reliability in harsh RF environments.
AlternativeMMIC AmplifierModels
● Qorvo (formerly RFMD) TQP3M9037: This high-linearity LNA MMIC delivers low noise figure and high OIP3 for cellular and Wi-Fi infrastructure applications, targeting similar frequency bands with robust RF performance.
● Analog Devices / HMC series (e.g., HMC744LP3E): These MMIC amplifiers provide high gain, low noise figure, and wide bandwidth in leadless surface-mount packages, suitable for microwave backhaul and point-to-point radio links.
● NXP BGU7006, BGU7007 series: These silicon germanium LNAs are designed for multi-band cellular and Wi-Fi front-ends, offering low noise figure and high linearity in compact QFN packages, making them strong alternatives for base station and small-cell applications.
The BGB741L7ESDE6327 is a high-performance broadband low-noise amplifier (LNA) MMIC developed by Infineon Technologies, targeting RF front-end applications from 50 MHz up to 3.5 GHz. Fabricated in Infineon's silicon-germanium carbon (SiGe:C) bipolar process, this device is internally matched to 50 Ω, which greatly simplifies system integration and reduces the need for additional RF matching components. Housed in a compact TSLP-7-1 package, it is optimized for space-constrained modules in mobile and industrial RF designs.
This LNA MMIC combines low noise figure with high gain and robust RF power handling, delivering a minimum noise figure as low as 1.05 dB at 2.4 GHz under optimal source matching conditions. It operates from a supply voltage of 1.8 V to 4.0 V and typically consumes around 5–10 mA in on-mode, while achieving a deep power-down current in the microampere range, which is essential for battery-powered systems. The device provides a transducer gain of around 17–21 dB across frequency bands such as 900 MHz, 1.9 GHz, and 2.4 GHz, along with good input and output return loss, enabling easy integration in 50 Ω environments. An integrated on/off control pin allows fast enable/disable sequencing, and an external resistor can be used to adjust the bias current for performance optimization. The chip also features high RF input power robustness up to 20 dBm and integrated ESD protection up to 2 kV HBM on all pins, enhancing reliability in harsh RF environments.
AlternativeMMIC AmplifierModels
● Qorvo (formerly RFMD) TQP3M9037: This high-linearity LNA MMIC delivers low noise figure and high OIP3 for cellular and Wi-Fi infrastructure applications, targeting similar frequency bands with robust RF performance.
● Analog Devices / HMC series (e.g., HMC744LP3E): These MMIC amplifiers provide high gain, low noise figure, and wide bandwidth in leadless surface-mount packages, suitable for microwave backhaul and point-to-point radio links.
● NXP BGU7006, BGU7007 series: These silicon germanium LNAs are designed for multi-band cellular and Wi-Fi front-ends, offering low noise figure and high linearity in compact QFN packages, making them strong alternatives for base station and small-cell applications.
