Model No: BFP196WH6327
Infineon Technologies BFP196WH6327
Manufacturer: Infineon Technologies
SEMICON NO.: BFP196WH6327
Package: PG-SOT343-4-1
Stock: In stock
Description: RF Transistor NPN 12V 150mA 7.5GHz
SEMICON NO.: BFP196WH6327
Package: PG-SOT343-4-1
Stock: In stock
Description: RF Transistor NPN 12V 150mA 7.5GHz
Quantity :
| Mfr | Infineon Technologies |
| Device Type | Low-Noise Silicon Bipolar RF Transistor (NPN) |
| Collector-Emitter Voltage (VCEO) | 12 V |
| Collector-Base Voltage (VCBO) | 20 V |
| Emitter-Base Voltage (VEBO) | 2 V |
| Collector Current (IC) | 150 mA |
| Power Dissipation (Ptot) | 700 mW |
| Transistor Polarity | NPN |
| Transition Frequency | 7.5 GHz |
| Operating Junction Temperature | 150°C |
| Package | PG-SOT343-4-1 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
BFP196WH6327RF TransistorNPN
BFP196WH6327 is Infineon's silicon epitaxial NPN dual-emitter RF bipolar transistor delivered in 4-pin miniature SOT-343 tape-and-reel packaging with RoHS lead-free and halogen-free compliance, MSL 1 unlimited moisture tolerance, EAR99 classification and AEC-Q101 automotive qualification supporting -65°C to +150°C extreme temperature range. It rated at 12V maximum VCEO, 20V VCB, 2V VEB, 150mA continuous collector current and 700mW total power dissipation, featuring industry-leading 7.5GHz typical transition frequency, only 1.3dB minimum noise figure at 900MHz, 17dB maximum available gain and 32dBm OIP3 for low-distortion RF signal amplification.
BFP196WH6327 serves as core low-noise amplifier transistor for GNSS active antenna front ends, 900MHz/1.8GHz DECT and PCN wireless transceivers, CATV signal booster modules, portable spectrum test equipment, IoT sub-GHz broadband signal amplifiers and automotive remote keyless entry RF circuits. Its ultra-low noise figure boosts receiver sensitivity to capture faint far-field RF signals, high linearity prevents signal compression for high-data-rate wireless communication systems, moderate power dissipation suits battery-powered handheld radio devices, wide temperature rating fits outdoor industrial monitoring sensors.
Alternative RF transistor Models
● BFR92AW (NXP): Wideband SOT-343 RF transistor with 5GHz transition frequency, optimized for low-cost consumer radio signal preamplifier designs without strict noise requirements.
● MMBT5771 (ON Semiconductor): SOT-23 low-noise RF NPN with comparable gain, suitable for simplified single-emitter compact wireless sensor modules with relaxed PCB size limits.
● GC0706 (Gcore): Domestic SOT-343 RF bipolar transistor with matching 7.5GHz fT, budget replacement for non-automotive commercial broadband amplifier hardware.
● BFP196WE6327 (Infineon): Identical electrical specs with alternate reel coding, fully pin-to-pin compatible for alternative mass production supply chains.
BFP196WH6327 is Infineon's silicon epitaxial NPN dual-emitter RF bipolar transistor delivered in 4-pin miniature SOT-343 tape-and-reel packaging with RoHS lead-free and halogen-free compliance, MSL 1 unlimited moisture tolerance, EAR99 classification and AEC-Q101 automotive qualification supporting -65°C to +150°C extreme temperature range. It rated at 12V maximum VCEO, 20V VCB, 2V VEB, 150mA continuous collector current and 700mW total power dissipation, featuring industry-leading 7.5GHz typical transition frequency, only 1.3dB minimum noise figure at 900MHz, 17dB maximum available gain and 32dBm OIP3 for low-distortion RF signal amplification.
BFP196WH6327 serves as core low-noise amplifier transistor for GNSS active antenna front ends, 900MHz/1.8GHz DECT and PCN wireless transceivers, CATV signal booster modules, portable spectrum test equipment, IoT sub-GHz broadband signal amplifiers and automotive remote keyless entry RF circuits. Its ultra-low noise figure boosts receiver sensitivity to capture faint far-field RF signals, high linearity prevents signal compression for high-data-rate wireless communication systems, moderate power dissipation suits battery-powered handheld radio devices, wide temperature rating fits outdoor industrial monitoring sensors.
Alternative RF transistor Models
● BFR92AW (NXP): Wideband SOT-343 RF transistor with 5GHz transition frequency, optimized for low-cost consumer radio signal preamplifier designs without strict noise requirements.
● MMBT5771 (ON Semiconductor): SOT-23 low-noise RF NPN with comparable gain, suitable for simplified single-emitter compact wireless sensor modules with relaxed PCB size limits.
● GC0706 (Gcore): Domestic SOT-343 RF bipolar transistor with matching 7.5GHz fT, budget replacement for non-automotive commercial broadband amplifier hardware.
● BFP196WE6327 (Infineon): Identical electrical specs with alternate reel coding, fully pin-to-pin compatible for alternative mass production supply chains.
