onsemi MBRS410LT3G - Semicone IC Supplier

Mfr	AMD
Product Family	MBRS4 Series
Device Type	Schottky Power Rectifier
Repetitive Peak Reverse Voltage	10 V
DC Reverse Voltage	10 V
Average Rectified Forward Current	4 A
Non-Repetitive Peak Surge Current	150 A
Forward Voltage	225 mV (Typ) / 330 mV (Max)
Reverse Leakage Current	5 mA (Max)
Operating Temperature	-65°C to +125°C
Package	DO-214AB(SMC)
Mounting Type	Surface Mount
Compliance	RoHS Compliant

The MBRS410LT3G is a high‑performance surface‑mount Schottky power rectifier produced by onsemi, packaged in the compact DO‑214AB (SMC) 2‑pin epoxy‑molded housing and delivered on tape‑and‑reel for high‑volume automated PCB assembly. Designed with epitaxial construction, oxide‑passivated junction and built‑in guard‑ring stress protection, this single diode provides 4 A average continuous forward current and 10 V repetitive peak reverse voltage, delivering ultra‑low forward voltage drop to minimize conduction power loss. Featuring 150 A peak non‑repetitive surge‑current tolerance and wide junction temperature range from ‑65 °C to +125 °C, this fast‑switching Schottky device is optimized for low‑voltage, high‑frequency power conversion, freewheeling loop protection and reverse‑polarity blocking circuits across compact portable and industrial hardware designs.
Key Features
● Maximum 0.33 V low forward voltage drop at 4 A forward current, effectively reducing heat generation and power dissipation.
● 4‑ampere continuous average rectified forward current with 150 A peak surge‑current capability to resist transient overload shocks.
● Fast Schottky switching performance with negligible reverse‑recovery charge, supporting high‑frequency DC‑DC converter topologies.
● Built‑in guard‑ring structure and oxide‑passivated junction enhance stability and improve avalanche transient energy resistance.
● Broad operating junction temperature window from ‑65 °C to +125 °C, offering reliable performance under extreme thermal conditions.
FAQ
Q: What is the main advantage of selecting MBRS410LT3G over standard silicon rectifier diodes?
A: Its Schottky barrier technology delivers far‑lower forward voltage loss and fast switching speed, raising power‑conversion efficiency for low‑voltage circuits.
Q: Can this diode protect circuits against reverse‑battery connection?
A: Yes, it is widely used for low‑voltage reverse‑polarity blocking, though thermal derating is required under sustained heavy‑current operation.
Alternative power diode parts
● MBRS420LT3G: onsemi 4 A, 20 V Schottky rectifier with identical SMC footprint, offering higher reverse‑voltage safety margin for low‑voltage power rails.
● NRVBS410LT3G: onsemi equivalent avalanche‑rated Schottky rectifier sharing full electrical specifications and pin‑compatible layout as a direct drop‑in replacement.
● SK310: 3 A, 10 V SMC Schottky diode suitable for projects with reduced current demand to achieve extra cost savings.