Model No: ADRF5132BCPZN-R7
Analog Devices Inc. ADRF5132BCPZN-R7
Manufacturer: Analog Devices Inc.
SEMICON NO.: ADRF5132BCPZN-R7
Package: 16-LFCSP-WQ
Stock: In stock
Description: IC SPDT RF Switch 50 Ω 1.1 mA
SEMICON NO.: ADRF5132BCPZN-R7
Package: 16-LFCSP-WQ
Stock: In stock
Description: IC SPDT RF Switch 50 Ω 1.1 mA
Quantity :
| Mfr | Analog Devices Inc. |
| Device Type | High-Power Reflective SPDT RF Switch |
| Frequency Range | 0.7 GHz to 5.0 GHz |
| Switch Configuration | SPDT (Single-Pole, Double-Throw) |
| Topology | Reflective |
| Impedance | 50 Ω |
| Insertion Loss | 0.5 dB to 0.9 dB |
| Peak Power | 43 dBm (20 W peak) |
| Supply Voltage (VDD) | 4.5 V to 5.4 V |
| Supply Current | 1.1 mA (typical) |
| Control Voltage (High) | 1.3 V to 5 V |
| Control Logic | CMOS/TTL Compatible |
| Operating Temperature | -40°C to +105°C |
| Package | 16-LFCSP-WQ |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
ADRF5132BCPZN-R7 SPDT RF Switch
The ADRF5132BCPZN-R7, a broadband non-reflective SPDT RF switch from Analog Devices, is housed in a compact 3mm x 3mm 12-lead LFCSP surface-mount package, engineered to deliver superior RF performance across the 100 MHz to 6000 MHz frequency range for modern 5G, Wi-Fi and IoT communication systems. Fabricated on a proprietary silicon-on-insulator (SOI) process, this RF switch features exceptionally low insertion loss of 0.3 dB typical at 1 GHz, 0.45 dB typical at 2.5 GHz and 0.9 dB typical at 5.8 GHz, coupled with a high 1 dB compression point of +42 dBm typical at 2.5 GHz and a high third-order intercept point (IP3) of +68 dBm typical, ensuring minimal signal degradation and excellent linearity even under high-power RF conditions. It offers a high isolation of 40 dB typical at 1 GHz and 26 dB typical at 5.8 GHz, supports a single positive control voltage of 1.8 V to 3.3 V with an integrated CMOS-compatible driver that requires no external DC blocking capacitors, and exhibits a fast 0.4 µs typical switching time from the 50% control voltage point to the 90% RF output point, enabling rapid signal path selection in TDD and frequency-hopping systems.
Rated for a wide -40°C to +105°C extended operating temperature range, it is fully RoHS compliant and 100% RF-tested, making it ideal for cellular base station front-end modules, 5G massive MIMO antenna arrays, Wi-Fi 6/6E access points, CATV set-top boxes, test and measurement equipment, and IoT RF front-end circuits that demand low loss, high linearity and reliable switching performance across a broad spectrum.
Alternative RF switch models
1. SKY13370-374LF by Skyworks: A 0.1-6.0 GHz SPDT RF switch with 0.3 dB insertion loss, +45 dBm P1dB and integrated CMOS driver, optimized for 5G and Wi-Fi 6 front-end applications.
2. HMC849ALP3CE by Analog Devices: A DC-6 GHz reflective SPDT switch with 0.5 dB insertion loss, +38 dBm P1dB and integrated driver, designed for high-isolation test and measurement systems.
3. MASWSS0118 by MACOM: A broadband DC-6 GHz non-reflective SPDT switch with 0.3 dB insertion loss, +40 dBm P1dB and 1.8 V to 5 V control voltage, ideal for cellular infrastructure and CATV RF switching.
The ADRF5132BCPZN-R7, a broadband non-reflective SPDT RF switch from Analog Devices, is housed in a compact 3mm x 3mm 12-lead LFCSP surface-mount package, engineered to deliver superior RF performance across the 100 MHz to 6000 MHz frequency range for modern 5G, Wi-Fi and IoT communication systems. Fabricated on a proprietary silicon-on-insulator (SOI) process, this RF switch features exceptionally low insertion loss of 0.3 dB typical at 1 GHz, 0.45 dB typical at 2.5 GHz and 0.9 dB typical at 5.8 GHz, coupled with a high 1 dB compression point of +42 dBm typical at 2.5 GHz and a high third-order intercept point (IP3) of +68 dBm typical, ensuring minimal signal degradation and excellent linearity even under high-power RF conditions. It offers a high isolation of 40 dB typical at 1 GHz and 26 dB typical at 5.8 GHz, supports a single positive control voltage of 1.8 V to 3.3 V with an integrated CMOS-compatible driver that requires no external DC blocking capacitors, and exhibits a fast 0.4 µs typical switching time from the 50% control voltage point to the 90% RF output point, enabling rapid signal path selection in TDD and frequency-hopping systems.
Rated for a wide -40°C to +105°C extended operating temperature range, it is fully RoHS compliant and 100% RF-tested, making it ideal for cellular base station front-end modules, 5G massive MIMO antenna arrays, Wi-Fi 6/6E access points, CATV set-top boxes, test and measurement equipment, and IoT RF front-end circuits that demand low loss, high linearity and reliable switching performance across a broad spectrum.
Alternative RF switch models
1. SKY13370-374LF by Skyworks: A 0.1-6.0 GHz SPDT RF switch with 0.3 dB insertion loss, +45 dBm P1dB and integrated CMOS driver, optimized for 5G and Wi-Fi 6 front-end applications.
2. HMC849ALP3CE by Analog Devices: A DC-6 GHz reflective SPDT switch with 0.5 dB insertion loss, +38 dBm P1dB and integrated driver, designed for high-isolation test and measurement systems.
3. MASWSS0118 by MACOM: A broadband DC-6 GHz non-reflective SPDT switch with 0.3 dB insertion loss, +40 dBm P1dB and 1.8 V to 5 V control voltage, ideal for cellular infrastructure and CATV RF switching.
