Model No: CSD17556Q5B
Texas Instruments CSD17556Q5B
Manufacturer: Texas Instruments
SEMICON NO.: CSD17556Q5B
Package: 8‑VSON‑CLIP
Stock: In stock
Description: Power MOSFET NexFET 30V 1.2mΩ
SEMICON NO.: CSD17556Q5B
Package: 8‑VSON‑CLIP
Stock: In stock
Description: Power MOSFET NexFET 30V 1.2mΩ
Quantity :
| Mfr | Texas Instruments |
| Device Type | N-Channel Enhancement Mode Power MOSFET |
| Product Series | NexFET™ Power MOSFET |
| Drain-to-Source Voltage (VDS) | 30 V |
| Gate-to-Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID) | 100 A, 215 A, 34 A |
| Pulsed Drain Current (IDM) | 400 A |
| Power Dissipation (PD) | 3.1 W |
| Power Dissipation (PD) | 191 W |
| Total Gate Charge (Qg) | 30 nC (Typ) / 39 nC (Max) |
| Gate-to-Drain Charge (Qgd) | 7.5 nC (Typ) |
| Input Capacitance (Ciss) | 7020 pF (Max) |
| Operating Temperature | –55°C to +150°C |
| Package | 8‑VSON‑CLIP |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
The CSD17556Q5B is a 30 V N-channel NexFET power MOSFET from Texas Instruments: a single, logic-level, enhancement-mode device in a lead-free 5 mm x 6 mm SON package (VSON-CLIP, 8 pins). It reaches 1.4 mOhm maximum on-resistance at VGS = 10 V and 1.8 mOhm at VGS = 4.5 V, with 30 nC total gate charge and 7.5 nC gate-to-drain, minimising conduction and switching loss in synchronous rectification and other power conversion circuits. The package carries 100 A continuous and 400 A pulsed drain current, dissipates 3.1 W to ambient and 191 W through the case, is avalanche rated to 500 mJ, and works from -55 °C to +150 °C junction temperature.
Highlights and Key Features
● On-resistance as low as 1.4 mOhm maximum at VGS = 10 V, cutting conduction loss in high-current paths.
● Ultra-low gate charge of 30 nC total and 7.5 nC gate-to-drain for high-frequency, low-loss switching.
● High current capability: 100 A continuous (package limited), 215 A silicon limited and 400 A pulsed.
● Low thermal resistance of 1.3 °C/W junction-to-case and about 40 °C/W junction-to-ambient on 2-oz copper.
● Avalanche rated to 500 mJ single pulse, with lead-free terminal plating, RoHS compliance and halogen-free material.
● Logic-level drive, 20 V maximum gate-to-source voltage and MSL 1 moisture sensitivity for simple designs.
Applications
● Point-of-load synchronous buck converters in networking, telecom and computing systems.
● Synchronous rectification in DC/DC converters and secondary-side power stages.
● Active ORing, hotswap and load-switch circuits in redundant power supplies.
● Server, datacenter and base-station stages where efficiency at high current matters.
Frequently Asked Questions
Q: What is the main advantage of the CSD17556Q5B?
A: 1.4 mOhm on-resistance plus only 30 nC gate charge, so both conduction and switching loss fall in one 5 mm x 6 mm package.
Q: Does it need a special gate driver?
A: No, it is logic-level with a 1.4 V typical threshold, though a 10 V drive gives the lowest on-resistance.
Q: How should I lay it out?
A: Use a large, thermally relieved copper pad with the clip-style drain connection and low gate resistance to avoid ringing.
● On-resistance as low as 1.4 mOhm maximum at VGS = 10 V, cutting conduction loss in high-current paths.
● Ultra-low gate charge of 30 nC total and 7.5 nC gate-to-drain for high-frequency, low-loss switching.
● High current capability: 100 A continuous (package limited), 215 A silicon limited and 400 A pulsed.
● Low thermal resistance of 1.3 °C/W junction-to-case and about 40 °C/W junction-to-ambient on 2-oz copper.
● Avalanche rated to 500 mJ single pulse, with lead-free terminal plating, RoHS compliance and halogen-free material.
● Logic-level drive, 20 V maximum gate-to-source voltage and MSL 1 moisture sensitivity for simple designs.
Applications
● Point-of-load synchronous buck converters in networking, telecom and computing systems.
● Synchronous rectification in DC/DC converters and secondary-side power stages.
● Active ORing, hotswap and load-switch circuits in redundant power supplies.
● Server, datacenter and base-station stages where efficiency at high current matters.
Frequently Asked Questions
Q: What is the main advantage of the CSD17556Q5B?
A: 1.4 mOhm on-resistance plus only 30 nC gate charge, so both conduction and switching loss fall in one 5 mm x 6 mm package.
Q: Does it need a special gate driver?
A: No, it is logic-level with a 1.4 V typical threshold, though a 10 V drive gives the lowest on-resistance.
Q: How should I lay it out?
A: Use a large, thermally relieved copper pad with the clip-style drain connection and low gate resistance to avoid ringing.
Alternative NexFET MOSFET Models
1. CSD17559Q5: the same SON outline at 1.5 mOhm maximum and 257 A silicon-limited current.
2. CSD17577Q5A: a 60 A, 5.8 mOhm variant with 13 nC gate charge for lighter point-of-load rails.
3. CSD17581Q5A: a 30 V, 60 A device rated 3.5 mOhm at 4.5 V in the identical outline.
4. CSD17555Q5A: a 30 V, 100 A part at 2.7 mOhm maximum for cost-sensitive designs.
5. BSC011N03LS: an Infineon OptiMOS 30 V, 100 A alternative in the same SuperSO8 5 x 6 footprint.
1. CSD17559Q5: the same SON outline at 1.5 mOhm maximum and 257 A silicon-limited current.
2. CSD17577Q5A: a 60 A, 5.8 mOhm variant with 13 nC gate charge for lighter point-of-load rails.
3. CSD17581Q5A: a 30 V, 60 A device rated 3.5 mOhm at 4.5 V in the identical outline.
4. CSD17555Q5A: a 30 V, 100 A part at 2.7 mOhm maximum for cost-sensitive designs.
5. BSC011N03LS: an Infineon OptiMOS 30 V, 100 A alternative in the same SuperSO8 5 x 6 footprint.
