Model No: IRLR3705ZTRPBF
Infineon Technologies IRLR3705ZTRPBF
Manufacturer: Analog Devices Inc.
SEMICON NO.: IRLR3705ZTRPBF
Package: D-Pak (TO-252-3)
Stock: In stock
Description: MOSFET HEXFET 55V 42A 8mΩ 130W
SEMICON NO.: IRLR3705ZTRPBF
Package: D-Pak (TO-252-3)
Stock: In stock
Description: MOSFET HEXFET 55V 42A 8mΩ 130W
Quantity :
| Mfr | Analog Devices Inc. |
| Device Type | N-Channel Power MOSFET |
| Product Series | HEXFET® |
| Drain-Source Voltage | 55 V |
| Continuous Drain Current | 42 A @25°C, 89 A @100°C |
| Power Dissipation | 130 W @25°C |
| Gate-Source Voltage | ±16 V |
| Drain-Source On-Resistance | 8 mΩ (Max), 6.5 mΩ (Typ) |
| Gate Threshold Voltage | 1 V (Min) / 3 V (Max) |
| Gate Charge | 66 nC (Max) |
| Input Capacitance | 2900 pF (Max) |
| Forward Transconductance | 89 S (Min) |
| Operating Temperature | -55°C to +175°C |
| Package | D-Pak (TO-252-3) |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
The IRLR3705ZTRPBF is a 55 V N-channel HEXFET power MOSFET from Infineon Technologies, originally developed by International Rectifier. Built on an advanced process with a logic-level gate, this single enhancement-mode device reaches 8.0 mOhm maximum on-resistance at VGS = 10 V, so it conducts efficiently while being driven from 4.5 V logic. It handles 42 A continuous at a 25 °C case (package limited), 89 A silicon limited and 360 A pulsed, and its 175 °C junction rating, fast switching speed and repetitive avalanche capability suit both load switching and high-frequency power conversion.
Highlights and Key Features
● 55 V drain-to-source rating with 8.0 mOhm maximum on-resistance at VGS = 10 V for ultra-low conduction loss.
● Logic-level gate drive, characterised at both 4.5 V and 10 V, letting simple 5 V circuits switch it directly.
● High current capability: 42 A package-limited and 89 A silicon-limited continuous drain current, plus a 360 A pulsed rating.
● 66 nC maximum total gate charge and 2900 pF input capacitance for fast, low-loss switching.
● 130 W power dissipation at Tc = 25 °C with a 0.88 W/°C linear derating factor and a 175 °C operating junction temperature.
● Repetitive avalanche rated at 110 mJ single pulse, with a built-in body diode, lead-free terminals and RoHS-compliant construction.
Applications
● DC-DC converters, synchronous rectification and switch-mode power supplies.
● Motor drive and control, including brushed and brushless motor bridges.
● Load switching, ORing, hot-swap and battery management circuits.
● Automotive and industrial power stages that need a rugged, logic-level FET.
Frequently Asked Questions
Q: What is the main advantage of the IRLR3705ZTRPBF?
A: 8 mOhm on-resistance combined with logic-level drive in a DPAK, so it runs cool and can be driven straight from 5 V logic.
Q: How should it be handled during assembly?
A: It is MSL 1, so normal reflow applies; provide a generous copper pad under the tab to spread heat from the 175 °C junction.
Highlights and Key Features
● 55 V drain-to-source rating with 8.0 mOhm maximum on-resistance at VGS = 10 V for ultra-low conduction loss.
● Logic-level gate drive, characterised at both 4.5 V and 10 V, letting simple 5 V circuits switch it directly.
● High current capability: 42 A package-limited and 89 A silicon-limited continuous drain current, plus a 360 A pulsed rating.
● 66 nC maximum total gate charge and 2900 pF input capacitance for fast, low-loss switching.
● 130 W power dissipation at Tc = 25 °C with a 0.88 W/°C linear derating factor and a 175 °C operating junction temperature.
● Repetitive avalanche rated at 110 mJ single pulse, with a built-in body diode, lead-free terminals and RoHS-compliant construction.
Applications
● DC-DC converters, synchronous rectification and switch-mode power supplies.
● Motor drive and control, including brushed and brushless motor bridges.
● Load switching, ORing, hot-swap and battery management circuits.
● Automotive and industrial power stages that need a rugged, logic-level FET.
Frequently Asked Questions
Q: What is the main advantage of the IRLR3705ZTRPBF?
A: 8 mOhm on-resistance combined with logic-level drive in a DPAK, so it runs cool and can be driven straight from 5 V logic.
Q: How should it be handled during assembly?
A: It is MSL 1, so normal reflow applies; provide a generous copper pad under the tab to spread heat from the 175 °C junction.
Alternative N-channel MOSFET Models
1. IRLU3705Z: a through-hole I-PAK (TO-251) version that shares the electrical ratings for socketed or waved designs.
2. AUIRLR3705Z: the AEC-Q101 automotive-qualified DPAK equivalent for under-the-hood and high-reliability applications.
3. IRLR2905ZTRPBF: a 55 V logic-level DPAK sibling at 27 mOhm for lighter-current, cost-sensitive rails.
4. IRLR3103TRPBF: a 30 V, 19 mOhm logic-level DPAK part for low-voltage, high-current switching.
5. IRLB3034PBF: a 40 V ultra-low 1.4 mOhm device for designs where conduction loss matters more than voltage headroom.
1. IRLU3705Z: a through-hole I-PAK (TO-251) version that shares the electrical ratings for socketed or waved designs.
2. AUIRLR3705Z: the AEC-Q101 automotive-qualified DPAK equivalent for under-the-hood and high-reliability applications.
3. IRLR2905ZTRPBF: a 55 V logic-level DPAK sibling at 27 mOhm for lighter-current, cost-sensitive rails.
4. IRLR3103TRPBF: a 30 V, 19 mOhm logic-level DPAK part for low-voltage, high-current switching.
5. IRLB3034PBF: a 40 V ultra-low 1.4 mOhm device for designs where conduction loss matters more than voltage headroom.
