Model No: ULN2804A
STMicroelectronics ULN2804A
Manufacturer: STMicroelectronics
SEMICON NO.: ULN2804A
Package: 18-DIP
Stock: In stock
Description: Darlington Transistor Array Octal 50V 500 mA
SEMICON NO.: ULN2804A
Package: 18-DIP
Stock: In stock
Description: Darlington Transistor Array Octal 50V 500 mA
Quantity :
| Mfr | STMicroelectronics |
| Device Type | Octal Darlington Transistor Array |
| Number of Channels / Drivers | 8 (Octal) |
| Output Type | Open-Collector |
| Collector-Emitter Voltage (VCEO) | 50 V |
| Continuous Collector Current (IC) | 500 mA (per channel) |
| Peak Load Current | 600 mA |
| Power Dissipation (PD) | 2.25 W |
| Input Voltage (VI) | 30 V |
| Operating Temperature | -20°C to +85°C |
| Package | 18-DIP |
| Mounting Type | Through Hole |
| Compliance | RoHS Compliant |
ULN2804A Octal Transistor Array
The ULN2804A is a high-voltage, high-current octal Darlington transistor array manufactured by STMicroelectronics, designed to provide efficient interface bridging between low-level logic circuits and high-power peripheral loads in a standard 18-pin plastic dual in-line package (PDIP-18). The device integrates eight independent NPN Darlington transistor pairs with common emitters, each featuring an integrated base resistor of 10.5 kΩ specifically optimized for direct interfacing with 6 V to 15 V CMOS and PMOS logic families, eliminating the need for external current-limiting components. Each Darlington channel is capable of delivering a peak load current of 600 mA and a continuous collector current of 500 mA, with an OFF-state collector-emitter voltage withstand capability of at least 50 V, ensuring robust performance when driving inductive loads such as relays, solenoids, stepper motors, and printer hammers.
This octal Darlington array distinguishes itself through a comprehensive integration of protection and performance features that minimize external component count while maximizing system reliability. The Darlington configuration delivers an exceptionally high DC current gain (hFE) of 1000 at 350 mA collector current and 2 V collector-emitter voltage, enabling microcontrollers and logic devices with limited drive current to control substantial power loads effortlessly. The device exhibits a maximum collector-emitter saturation voltage of 1.6 V at 350 mA with 500 µA base drive, ensuring efficient power delivery with minimal voltage drop across the switch. With a total power dissipation rating of 2.25 W and an operating junction temperature range extending to 150°C, the ULN2804A maintains reliable performance under demanding thermal conditions. The copper lead frame construction enhances thermal conductivity and mechanical durability, making it suitable for both industrial automation environments and cost-sensitive consumer electronics where long-term operational stability is paramount.
Alternative octal NPN transistor Models
● ULN2803A: STMicroelectronics' companion variant featuring a 2.7 kΩ input resistor optimized for 5 V TTL and CMOS logic interfacing, offering identical electrical performance and pinout for systems operating at lower logic voltage levels.
● MC1413BDR2G: onsemi's seven-channel Darlington array in SOIC-16 package, offering a surface-mount alternative with slightly fewer channels but similar 500 mA per-channel current capability for space-constrained designs.
● TBD62083APG: Toshiba's DMOS transistor array featuring eight channels with 50 V / 500 mA ratings and lower ON-resistance than bipolar Darlingtons, providing a modern MOSFET-based alternative for applications prioritizing reduced power dissipation and higher switching efficiency.
The ULN2804A is a high-voltage, high-current octal Darlington transistor array manufactured by STMicroelectronics, designed to provide efficient interface bridging between low-level logic circuits and high-power peripheral loads in a standard 18-pin plastic dual in-line package (PDIP-18). The device integrates eight independent NPN Darlington transistor pairs with common emitters, each featuring an integrated base resistor of 10.5 kΩ specifically optimized for direct interfacing with 6 V to 15 V CMOS and PMOS logic families, eliminating the need for external current-limiting components. Each Darlington channel is capable of delivering a peak load current of 600 mA and a continuous collector current of 500 mA, with an OFF-state collector-emitter voltage withstand capability of at least 50 V, ensuring robust performance when driving inductive loads such as relays, solenoids, stepper motors, and printer hammers.
This octal Darlington array distinguishes itself through a comprehensive integration of protection and performance features that minimize external component count while maximizing system reliability. The Darlington configuration delivers an exceptionally high DC current gain (hFE) of 1000 at 350 mA collector current and 2 V collector-emitter voltage, enabling microcontrollers and logic devices with limited drive current to control substantial power loads effortlessly. The device exhibits a maximum collector-emitter saturation voltage of 1.6 V at 350 mA with 500 µA base drive, ensuring efficient power delivery with minimal voltage drop across the switch. With a total power dissipation rating of 2.25 W and an operating junction temperature range extending to 150°C, the ULN2804A maintains reliable performance under demanding thermal conditions. The copper lead frame construction enhances thermal conductivity and mechanical durability, making it suitable for both industrial automation environments and cost-sensitive consumer electronics where long-term operational stability is paramount.
Alternative octal NPN transistor Models
● ULN2803A: STMicroelectronics' companion variant featuring a 2.7 kΩ input resistor optimized for 5 V TTL and CMOS logic interfacing, offering identical electrical performance and pinout for systems operating at lower logic voltage levels.
● MC1413BDR2G: onsemi's seven-channel Darlington array in SOIC-16 package, offering a surface-mount alternative with slightly fewer channels but similar 500 mA per-channel current capability for space-constrained designs.
● TBD62083APG: Toshiba's DMOS transistor array featuring eight channels with 50 V / 500 mA ratings and lower ON-resistance than bipolar Darlingtons, providing a modern MOSFET-based alternative for applications prioritizing reduced power dissipation and higher switching efficiency.
