Model No: STL117N4LF7AG
STMicroelectronics STL117N4LF7AG
Manufacturer: STMicroelectronics
SEMICON NO.: STL117N4LF7AG
Package: 8-PowerVDFN
Stock: In stock
Description: MOSFET N-CH 40V 119A POWERFLAT
SEMICON NO.: STL117N4LF7AG
Package: 8-PowerVDFN
Stock: In stock
Description: MOSFET N-CH 40V 119A POWERFLAT
Quantity :
| Mfr | STMicroelectronics |
| Core Function | N-Channel Power MOSFET |
| Technology | STripFET™ F7 |
| Drain-Source Voltage (Vdss) | 40 V |
| Continuous Drain Current (Id) | 119 A |
| Drive Voltage (Vgs) | 4.5 V (Max Rds On), 10 V (Min Rds On) |
| Static Drain-Source On-Resistance (Rds(on)) | 3.5 mΩ (Max) |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.5 V (Max) |
| Total Gate Charge (Qg) | 27.6 nC (Max) |
| Max Gate-Source Voltage (Vgs) | ±20 V |
| Input Capacitance (Ciss) | 1780 pF (Max) |
| Power Dissipation (Pd) | 94 W (Max) |
| Operating Temperature | -55°C ~ +175°C |
| Package | 8-PowerVDFN |
| Mounting | Surface Mount (SMD/SMT) |
| Compliance | RoHS Compliant |
STL117N4LF7AG N-Channel 40 V 119A (Tc) 94W (Tc)
The STL117N4LF7AG is an automotive-grade N-channel Power MOSFET from STMicroelectronics. This device utilizes STripFET™ F7 technology with an enhanced trench gate structure, resulting in very low on-state resistance and reduced internal capacitance and gate charge for faster and more efficient switching. It is designed to meet the stringent requirements of automotive applications, offering high reliability and performance.
Electrical Characteristics and Advantages
The STL117N4LF7AG features a maximum drain-source voltage (VDS) of 40V and a typical on-state resistance (RDS(on)) of 3.5 mΩ at 25°C. It can handle a continuous drain current (ID) of up to 119A. The device also offers a low gate charge (QG) and a fast switching speed, which contribute to its high efficiency. It is compliant with the AEC-Q101 standard, ensuring robustness and reliability in automotive applications.
This MOSFET provides several key performance benefits. Its low on-state resistance ensures minimal power loss and high efficiency, making it suitable for applications requiring high current handling and low power dissipation. The STL117N4LF7AG also features excellent thermal performance, thanks to its advanced packaging and low RDS(on), which helps in maintaining a stable operation under high load conditions. Additionally, its fast switching capability reduces switching losses, further enhancing overall system efficiency.
Applications
The STL117N4LF7AG is widely used in automotive applications, including electric power steering (EPS), electronic braking systems (EBS), and hybrid/electric vehicle (HEV) powertrains. Its high current capability and low on-state resistance make it ideal for driving high-power loads, while its fast switching speed ensures efficient operation in high-frequency applications. The device is also suitable for industrial applications where high reliability and performance are required.
AlternativeTransistors Models
● STL117N4LF7: A similar N-channel Power MOSFET from STMicroelectronics, offering the same voltage and current ratings but without the automotive grade certification.
● STB75NF75L: A 75V N-channel Power MOSFET with a very low on-state resistance of 0.009Ω and a continuous drain current of 75A, suitable for high-power applications.
● STL76DN4LF7AG: An automotive-grade dual N-channel 40V Power MOSFET with a typical on-state resistance of 9mΩ and a continuous drain current of 18A per channel, ideal for applications requiring dual-channel control.
The STL117N4LF7AG is an automotive-grade N-channel Power MOSFET from STMicroelectronics. This device utilizes STripFET™ F7 technology with an enhanced trench gate structure, resulting in very low on-state resistance and reduced internal capacitance and gate charge for faster and more efficient switching. It is designed to meet the stringent requirements of automotive applications, offering high reliability and performance.
Electrical Characteristics and Advantages
The STL117N4LF7AG features a maximum drain-source voltage (VDS) of 40V and a typical on-state resistance (RDS(on)) of 3.5 mΩ at 25°C. It can handle a continuous drain current (ID) of up to 119A. The device also offers a low gate charge (QG) and a fast switching speed, which contribute to its high efficiency. It is compliant with the AEC-Q101 standard, ensuring robustness and reliability in automotive applications.
This MOSFET provides several key performance benefits. Its low on-state resistance ensures minimal power loss and high efficiency, making it suitable for applications requiring high current handling and low power dissipation. The STL117N4LF7AG also features excellent thermal performance, thanks to its advanced packaging and low RDS(on), which helps in maintaining a stable operation under high load conditions. Additionally, its fast switching capability reduces switching losses, further enhancing overall system efficiency.
Applications
The STL117N4LF7AG is widely used in automotive applications, including electric power steering (EPS), electronic braking systems (EBS), and hybrid/electric vehicle (HEV) powertrains. Its high current capability and low on-state resistance make it ideal for driving high-power loads, while its fast switching speed ensures efficient operation in high-frequency applications. The device is also suitable for industrial applications where high reliability and performance are required.
AlternativeTransistors Models
● STL117N4LF7: A similar N-channel Power MOSFET from STMicroelectronics, offering the same voltage and current ratings but without the automotive grade certification.
● STB75NF75L: A 75V N-channel Power MOSFET with a very low on-state resistance of 0.009Ω and a continuous drain current of 75A, suitable for high-power applications.
● STL76DN4LF7AG: An automotive-grade dual N-channel 40V Power MOSFET with a typical on-state resistance of 9mΩ and a continuous drain current of 18A per channel, ideal for applications requiring dual-channel control.
