Model No: STGB30H60DLLFBAG
STMicroelectronics STGB30H60DLLFBAG
Manufacturer: STMicroelectronics
SEMICON NO.: STGB30H60DLLFBAG
Package: TO-263 (D2PAK)
Stock: In stock
Description: IGBT Trench Field Stop 600V 260W TO-263
SEMICON NO.: STGB30H60DLLFBAG
Package: TO-263 (D2PAK)
Stock: In stock
Description: IGBT Trench Field Stop 600V 260W TO-263
Quantity :
| Mfr | STMicroelectronics |
| IGBT Type | Trench Field-Stop |
| Voltage | 600V (max) |
| Current | 60A (continuous), 120A (pulsed) |
| Power Dissipation | 260W (max) |
| Switching Energy | 600µJ (turn-off) |
| Gate Charge | 110nC |
| Turn-On/Off Delay | - / 320ns @ 25°C |
| Input Type | Logic-level gate drive (compatible with 5V) |
| Operating Temperature | -55°C to +175°C |
| Package | TO-263 (D2PAK) |
| Mounting Type | Surface Mount (SMD) |
| Compliance | RoHS compliant, lead-free |
STGB30H60DLLFBAG 600V 30A IGBT
The STGB30H60DLLFBAG is a high-performance, trench gate field-stop IGBT (Insulated Gate Bipolar Transistor) designed for demanding power conversion applications. It features a 600 V collector-emitter breakdown voltage and a maximum collector current of 30 A, making it suitable for high-efficiency power conversion in various industrial and automotive settings.
Features and Applications
This IGBT offers fast switching capabilities with a low saturation voltage, ensuring high efficiency and minimal power loss. It has a positive temperature coefficient, which helps in thermal stability, and a low tail current, reducing switching losses. The device also features high input impedance and an embedded anti-parallel diode, which simplifies circuit design. It is packaged in a TO-263AB (D2PAK) surface-mount package, making it suitable for compact and reliable designs.
The STGB30H60DLLFBAG is widely used in applications requiring high power conversion efficiency and reliability. These include motor drives, solar inverters, uninterruptible power supplies (UPS), induction heating and welding systems, and switched-mode power supplies. Its robust design and high voltage rating make it ideal for harsh industrial environments.
Technical Specifications
The STGB30H60DLLFBAG operates within a wide temperature range of -55°C to +175°C, ensuring reliable performance in extreme conditions. It has a maximum gate-emitter voltage of ±20 V and a continuous collector current of 30 A. The device is designed to meet automotive-grade standards, ensuring high reliability and durability.
Alternative Trench gate field-stop IGBT Models
● STGB30H60DLFB: This variant shares similar core features with the STGB30H60DLLFBAG but may differ in package type or pin configuration. It is also designed for high-efficiency power conversion applications.
●STGB30H60DLF: Another alternative within the STMicroelectronics IGBT family, offering similar performance characteristics but potentially with different packaging options.
● STGB30H60D: This model provides the same high-voltage and high-current capabilities, making it suitable for applications requiring robust power handling and efficiency.
The STGB30H60DLLFBAG is a high-performance, trench gate field-stop IGBT (Insulated Gate Bipolar Transistor) designed for demanding power conversion applications. It features a 600 V collector-emitter breakdown voltage and a maximum collector current of 30 A, making it suitable for high-efficiency power conversion in various industrial and automotive settings.
Features and Applications
This IGBT offers fast switching capabilities with a low saturation voltage, ensuring high efficiency and minimal power loss. It has a positive temperature coefficient, which helps in thermal stability, and a low tail current, reducing switching losses. The device also features high input impedance and an embedded anti-parallel diode, which simplifies circuit design. It is packaged in a TO-263AB (D2PAK) surface-mount package, making it suitable for compact and reliable designs.
The STGB30H60DLLFBAG is widely used in applications requiring high power conversion efficiency and reliability. These include motor drives, solar inverters, uninterruptible power supplies (UPS), induction heating and welding systems, and switched-mode power supplies. Its robust design and high voltage rating make it ideal for harsh industrial environments.
Technical Specifications
The STGB30H60DLLFBAG operates within a wide temperature range of -55°C to +175°C, ensuring reliable performance in extreme conditions. It has a maximum gate-emitter voltage of ±20 V and a continuous collector current of 30 A. The device is designed to meet automotive-grade standards, ensuring high reliability and durability.
Alternative Trench gate field-stop IGBT Models
● STGB30H60DLFB: This variant shares similar core features with the STGB30H60DLLFBAG but may differ in package type or pin configuration. It is also designed for high-efficiency power conversion applications.
●STGB30H60DLF: Another alternative within the STMicroelectronics IGBT family, offering similar performance characteristics but potentially with different packaging options.
● STGB30H60D: This model provides the same high-voltage and high-current capabilities, making it suitable for applications requiring robust power handling and efficiency.
