Model No: STB16NF06LT4
STMicroelectronics STB16NF06LT4
Manufacturer: STMicroelectronics
SEMICON NO.: STB16NF06LT4
Package: D2PAK (TO-263-3)
Stock: In stock
Description: Transistors Power MOSFET 1 N-Channel
SEMICON NO.: STB16NF06LT4
Package: D2PAK (TO-263-3)
Stock: In stock
Description: Transistors Power MOSFET 1 N-Channel
Quantity :
| Mfr | STMicroelectronics |
| Product Family | STripFET™ II |
| Device Type | N-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage (VDSS) | 60 V |
| Continuous Drain Current (ID) @ 25°C | 16 A |
| Pulsed Drain Current (IDM) | 64 A |
| Power Dissipation (Ptot) | 45 W |
| Special Features | Logic-Level Gate Drive |
| Operating Temperature | -55°C to +175°C |
| Package | D2PAK (TO-263-3) |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
STB16NF06LT4 N‑Channel Power MOSFET Transistors
The STB16NF06LT4 is an N‑channel power MOSFET manufactured by STMicroelectronics using the advanced STripFET™ II process, engineered for medium‑voltage, high‑efficiency switching applications. Housed in a compact D2PAK (TO‑263) surface‑mount package, it delivers a 60 V drain‑source voltage (VDS), 16 A continuous drain current (ID), and a low 90 mΩ maximum RDS(on) at 10 V gate drive, with a ±16 V gate‑source voltage rating and a maximum power dissipation of 45 W at 25°C. Optimized for logic‑level drive and high‑speed switching, this device combines low on‑resistance, minimal gate charge, and robust avalanche ruggedness, making it ideal for cost‑effective, high‑performance power conversion and load control systems.
Key Features and Application Scenarios
This MOSFET features a logic‑level gate compatible with 5 V microcontroller outputs, a low typical gate charge of 10 nC at 4.5 V, and an input capacitance of 345 pF, enabling fast switching with minimal drive power. It provides exceptional dv/dt capability, tight parameter tolerances, and a wide operating temperature range of −55°C to +175°C, ensuring stability in harsh industrial and automotive environments. Switching characteristics include a 10 ns turn‑on delay, 20 ns turn‑off delay, 37 ns rise time, and 12.5 ns fall time, supporting PWM frequencies up to 100 kHz. Core applications include DC‑DC converters, motor drives (DC/BLDC), solenoid and relay drivers, battery management systems, automotive body electronics, industrial power supplies, and LED lighting drivers.
Selection Advantages
Alternative switching MOSFET Models
● IRLZ44N (Infineon): 60 V/17 A N‑channel MOSFET with 75 mΩ RDS(on), TO‑220 package, ideal for low‑cost medium‑power switching.
● AO3407 (Alpha & Omega): 60 V/15 A N‑channel MOSFET with 80 mΩ RDS(on), SOT‑223 package, suitable for space‑constrained portable applications.
● STD16NF06LT4 (STMicroelectronics): 60 V/16 A N‑channel MOSFET with 90 mΩ RDS(on), DPAK package, pin‑compatible with smaller footprint.
● FDP16N60 (ON Semiconductor): 60 V/16 A N‑channel MOSFET with 100 mΩ RDS(on), TO‑220 package, robust for industrial motor control.
● SI2302 (Vishay): 60 V/14 A N‑channel MOSFET with 85 mΩ RDS(on), SOT‑23 package, cost‑effective for low‑power DC‑DC converters.
The STB16NF06LT4 is an N‑channel power MOSFET manufactured by STMicroelectronics using the advanced STripFET™ II process, engineered for medium‑voltage, high‑efficiency switching applications. Housed in a compact D2PAK (TO‑263) surface‑mount package, it delivers a 60 V drain‑source voltage (VDS), 16 A continuous drain current (ID), and a low 90 mΩ maximum RDS(on) at 10 V gate drive, with a ±16 V gate‑source voltage rating and a maximum power dissipation of 45 W at 25°C. Optimized for logic‑level drive and high‑speed switching, this device combines low on‑resistance, minimal gate charge, and robust avalanche ruggedness, making it ideal for cost‑effective, high‑performance power conversion and load control systems.
Key Features and Application Scenarios
This MOSFET features a logic‑level gate compatible with 5 V microcontroller outputs, a low typical gate charge of 10 nC at 4.5 V, and an input capacitance of 345 pF, enabling fast switching with minimal drive power. It provides exceptional dv/dt capability, tight parameter tolerances, and a wide operating temperature range of −55°C to +175°C, ensuring stability in harsh industrial and automotive environments. Switching characteristics include a 10 ns turn‑on delay, 20 ns turn‑off delay, 37 ns rise time, and 12.5 ns fall time, supporting PWM frequencies up to 100 kHz. Core applications include DC‑DC converters, motor drives (DC/BLDC), solenoid and relay drivers, battery management systems, automotive body electronics, industrial power supplies, and LED lighting drivers.
Selection Advantages
Alternative switching MOSFET Models
● IRLZ44N (Infineon): 60 V/17 A N‑channel MOSFET with 75 mΩ RDS(on), TO‑220 package, ideal for low‑cost medium‑power switching.
● AO3407 (Alpha & Omega): 60 V/15 A N‑channel MOSFET with 80 mΩ RDS(on), SOT‑223 package, suitable for space‑constrained portable applications.
● STD16NF06LT4 (STMicroelectronics): 60 V/16 A N‑channel MOSFET with 90 mΩ RDS(on), DPAK package, pin‑compatible with smaller footprint.
● FDP16N60 (ON Semiconductor): 60 V/16 A N‑channel MOSFET with 100 mΩ RDS(on), TO‑220 package, robust for industrial motor control.
● SI2302 (Vishay): 60 V/14 A N‑channel MOSFET with 85 mΩ RDS(on), SOT‑23 package, cost‑effective for low‑power DC‑DC converters.
