Model No: PMV37ENEAR
Nexperia USA Inc. PMV37ENEAR
Manufacturer: Nexperia USA Inc.
SEMICON NO.: PMV37ENEAR
Package: SOT-23
Stock: In stock
Description: MOSFET 60V 3.5A 13nC 450pF
SEMICON NO.: PMV37ENEAR
Package: SOT-23
Stock: In stock
Description: MOSFET 60V 3.5A 13nC 450pF
Quantity :
| Mfr | Nexperia USA Inc. |
| Device Type | N-Channel Enhancement Mode Trench MOSFET |
| Drain-Source Voltage (Max) | 60 V |
| Continuous Drain Current (Max) | 3.5 A |
| Power Dissipation (Max) | 710 mW / 8.3 W |
| Gate-Source Voltage (Max) | ±20 V |
| Avalanche Energy | 15.4 mJ |
| Drain-Source On-Resistance | 49 mΩ(Max), 37 mΩ(Typ) |
| Gate Threshold Voltage | 1.3 V (Typ) / 1.7 V (Max) |
| Total Gate Charge (Typ) | 13 nC |
| Input Capacitance (Typ) | 450 pF |
| Reverse Transfer Capacitance (Typ) | 30 pF |
| Operating Temperature | –55°C to +175°C |
| Package | SOT-23 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
PMV37ENEAR 60 V, 3.5 A N-Channel Trench MOSFET in SOT23/TO-236AB
The PMV37ENEAR is a 60 V N-channel enhancement-mode Trench MOSFET from Nexperia in the small SOT23 (TO-236AB) surface-mounted package. Rated 60 V drain-source, +/-20 V gate-source and 3.5 A continuous drain current at Tamb = 25 C, it achieves 37 mOhm typical and 49 mOhm maximum on-state resistance at VGS = 10 V and ID = 3.5 A. Logic-level gate drive, a 2.7 V maximum threshold, 13 nC gate charge and 450 pF input capacitance keep switching losses low, while the -55 C to +175 C junction range and better than 2 kV HBM (class H2) ESD protection make it rugged. AEC-Q101 qualified and supplied on 3000-piece tape-and-reel, this compact Trench MOSFET suits relay drivers, high-speed line drivers, low-side load switches and general switching circuits.
Highlights and Features
● N-channel enhancement-mode Trench MOSFET rated 60 V VDS and 3.5 A ID.
● Low RDS(on) of 37 mOhm typical and 49 mOhm maximum at VGS = 10 V, ID = 3.5 A.
● Logic-level compatible gate drive with a maximum VGS(th) of 2.7 V at 250 uA.
● Low gate charge of 13 nC maximum and a small 450 pF input capacitance for fast switching.
● Gate-source voltage range of +/-20 V for robust gate-drive margin.
● Internal ESD protection better than 2 kV HBM (class H2).
● Extended junction temperature range Tj = 175 C for thermal headroom.
Applications
● Relay drivers in automotive and industrial control modules.
● High-speed line drivers and signal switching circuits.
● Low-side load switches for lamps, solenoids and small actuators.
● General-purpose switching circuits and interface stages.
● Battery-powered and space-constrained portable electronics.
Frequently Asked Questions
Q: What voltage and current can the device handle? A: 60 V drain-source and 3.5 A continuous drain current at 25 C ambient.
Q: How low is the on-state resistance? A: 37 mOhm typical and 49 mOhm maximum at VGS = 10 V and ID = 3.5 A.
Q: Is it logic-level compatible? A: Yes; the maximum gate threshold is 2.7 V and RDS(on) is specified from VGS = 4.5 V.
Alternative and Equivalent N-channel Trench MOSFET Models
1. PMV37ENER - the PMV37ENE-series version in the same SOT23 package, offered as a related orderable code.
2. FDN5632N-F085 - an onsemi AEC-Q101 60 V N-channel MOSFET in SOT-23 suggested as a direct functional replacement.
3. TSM850N06CX RFG - a Taiwan Semiconductor 60 V N-channel MOSFET in SOT-23 used as a cross-source alternative.
4. NVR5198NLT1G - an onsemi 60 V, 2.2 A automotive-qualified N-channel MOSFET in SOT-23 for lower-current duty.
5. BSP122,115 - a Nexperia 60 V logic-level N-channel MOSFET in SOT-223 for higher power dissipation.
1. PMV37ENER - the PMV37ENE-series version in the same SOT23 package, offered as a related orderable code.
2. FDN5632N-F085 - an onsemi AEC-Q101 60 V N-channel MOSFET in SOT-23 suggested as a direct functional replacement.
3. TSM850N06CX RFG - a Taiwan Semiconductor 60 V N-channel MOSFET in SOT-23 used as a cross-source alternative.
4. NVR5198NLT1G - an onsemi 60 V, 2.2 A automotive-qualified N-channel MOSFET in SOT-23 for lower-current duty.
5. BSP122,115 - a Nexperia 60 V logic-level N-channel MOSFET in SOT-223 for higher power dissipation.
