Model No: NVTFS4823NWFTWG
onsemi NVTFS4823NWFTWG
Manufacturer: onsemi
SEMICON NO.: NVTFS4823NWFTWG
Package: 8-WDFN
Stock: In stock
Description: MOSFET N-CH 30V 13A 8WDFN
SEMICON NO.: NVTFS4823NWFTWG
Package: 8-WDFN
Stock: In stock
Description: MOSFET N-CH 30V 13A 8WDFN
Quantity :
| Mfr | onsemi |
| Devices Type | Transistor - FET, MOSFET - Single |
| Description | N-Channel 30V 13A (Ta) Power MOSFET |
| Technology | MOSFET (Metal Oxide) |
| Drain-Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 13A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 10.5 mΩ @ 15A, 10V |
| Gate Threshold Voltage (Vgs(th) Max) | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 12V |
| Power Dissipation (Max) | 3.1W (Ta), 21W (Tc) |
| Vgs (Max) | ±20V |
| Package/Sizes | 8-WDFN |
| Operating Temperature | -55°C ~ 175°C |
| Mounting Type | Surface Mount (SMD/SMT) |
| RoHS Compliance | Yes |
onsemiPower MOSFETNVTFS4823NWFTWG30V 30A MOSFET
The NVTFS4823NWFTWG is an N-Channel Power MOSFET designed by ON Semiconductor. It is optimized for high efficiency and low power dissipation in a compact surface-mount package. This device features a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) of up to 30A, and a low on-state resistance (RDS(on)) of 10.5 mΩ at VGS = 10V. The NVTFS4823NWFTWG is available in an 8-WDFN (3.3x3.3 mm) package, making it suitable for space-constrained designs.
Low RDS(on) MOSFET NVTFS4823NWFTWGFeatures
This Power MOSFET offers several key features that make it ideal for a variety of applications. It has a low gate charge (Qg) and low gate-drain capacitance (Cgd), which minimize switching losses and improve efficiency. The device is also 100% avalanche tested and AEC-Q101 qualified, ensuring high reliability and suitability for automotive applications. Additionally, it supports high thermal performance and is available with a wettable flank option for enhanced optical inspection.
The NVTFS4823NWFTWG operates within a temperature range of -55°C to +175°C, making it suitable for both commercial and industrial applications. It has a maximum power dissipation of 21W at Tc (case temperature) and 3.1W at Ta (ambient temperature). The device is designed to minimize conduction losses with its low RDS(on) and offers excellent thermal performance in its compact 8-WDFN package.
NVTFS4823NWFTWG Applications
The NVTFS4823NWFTWG is widely used in applications requiring high current handling and low power dissipation. These include power supply DC-DC switcher output drivers, automotive infotainment systems, and other high-efficiency power management systems. Its low RDS(on) and compact size make it ideal for applications where space and efficiency are critical.
AutomotiveMOSFET Alternative models
1. NVTFS4823N: 30V, 30A, 10.5 mΩ, Single N-Channel MOSFET.
2. NVTFS4823NTAG: Equivalent to the NVTFS4823N but with additional tagging for specific applications.
The NVTFS4823NWFTWG is an N-Channel Power MOSFET designed by ON Semiconductor. It is optimized for high efficiency and low power dissipation in a compact surface-mount package. This device features a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) of up to 30A, and a low on-state resistance (RDS(on)) of 10.5 mΩ at VGS = 10V. The NVTFS4823NWFTWG is available in an 8-WDFN (3.3x3.3 mm) package, making it suitable for space-constrained designs.
Low RDS(on) MOSFET NVTFS4823NWFTWGFeatures
This Power MOSFET offers several key features that make it ideal for a variety of applications. It has a low gate charge (Qg) and low gate-drain capacitance (Cgd), which minimize switching losses and improve efficiency. The device is also 100% avalanche tested and AEC-Q101 qualified, ensuring high reliability and suitability for automotive applications. Additionally, it supports high thermal performance and is available with a wettable flank option for enhanced optical inspection.
The NVTFS4823NWFTWG operates within a temperature range of -55°C to +175°C, making it suitable for both commercial and industrial applications. It has a maximum power dissipation of 21W at Tc (case temperature) and 3.1W at Ta (ambient temperature). The device is designed to minimize conduction losses with its low RDS(on) and offers excellent thermal performance in its compact 8-WDFN package.
NVTFS4823NWFTWG Applications
The NVTFS4823NWFTWG is widely used in applications requiring high current handling and low power dissipation. These include power supply DC-DC switcher output drivers, automotive infotainment systems, and other high-efficiency power management systems. Its low RDS(on) and compact size make it ideal for applications where space and efficiency are critical.
AutomotiveMOSFET Alternative models
1. NVTFS4823N: 30V, 30A, 10.5 mΩ, Single N-Channel MOSFET.
2. NVTFS4823NTAG: Equivalent to the NVTFS4823N but with additional tagging for specific applications.
