Model No: NTS4001NT1G
onsemi NTS4001NT1G
Manufacturer: onsemi
SEMICON NO.: NTS4001NT1G
Package: SOT-323
Stock: In stock
Description: IC MOSFET N-CH 30V 270mA 330mW
SEMICON NO.: NTS4001NT1G
Package: SOT-323
Stock: In stock
Description: IC MOSFET N-CH 30V 270mA 330mW
Quantity :
| Mfr | onsemi |
Type | N-Channel Small Signal MOSFET |
| Drain-Source Voltage (VDS) | 30V |
| Gate-Source Voltage (VGS) | ±20V |
| Continuous Drain Current (ID) | 270mA (TA = 25°C) |
| On-Resistance (RDS(on)) | 1.5Ω @ 10mA, 4V |
| Gate Threshold Voltage (VGS(th)) | 0.8V–1.5V @ 100µA |
| Input Capacitance (Ciss) | 33pF @ 5V |
| Gate Charge (Qg) | 1.3nC @ 5V |
| Power Dissipation (PD) | 330mW (TA) |
| Switching Times | Rise Time: 23ns, Fall Time: 82ns |
| Package/Sizes | SOT-323 |
| Operating Temperature | -55°C to +150°C |
| Mounting Type | Surface Mount (SMD/SMT) |
NTS4001NT1G Small signal MOSFET, N-channel MOSFET
The NTS4001NT1G is a single N-channel small signal MOSFET designed by ON Semiconductor. It features a maximum drain-source voltage of 30V and a continuous drain current of 270mA, making it suitable for a variety of low-power applications. The device is packaged in a compact SC-70 (SOT-323) form factor, which is 30% smaller than a TSOP package. It is also AEC-Q101 qualified and PPAP capable, ensuring high reliability for automotive and industrial applications.
Features
The NTS4001NT1G offers several key features that enhance its performance and versatility. It has a low gate charge, which enables fast switching capabilities, making it ideal for applications requiring high efficiency and minimal switching losses. The device also features ESD protection on the gate to prevent damage during handling and assembly. Additionally, it has a typical input capacitance of 33pF at 5V, ensuring minimal impact on high-frequency circuits. Its drain-source on-state resistance (Rds(on)) is 1.5Ω at 4V and 10mA, providing efficient current handling capabilities.
Applications
The NTS4001NT1G is widely used in applications that require efficient power switching and small form factors. It is commonly found in low-side load switches, where its ability to handle high current pulses and low on-state resistance ensures reliable operation. It is also used in lithium-ion battery-powered devices, such as smartphones, PDAs, and digital cameras, where its compact size and low power consumption are critical. Additionally, it is suitable for buck converters and level-shifting applications, where its fast switching capabilities and low gate charge contribute to high efficiency.
AEC-Q101qualified MOSFET Selection Advantages
Choosing the NTS4001NT1G provides several advantages. Its small SC-70 package allows for integration into space-constrained designs, while its AEC-Q101 qualification ensures reliability in demanding environments. The low gate charge and fast switching capabilities make it an excellent choice for applications requiring high efficiency and minimal power loss. Additionally, its ESD-protected gate reduces the risk of damage during manufacturing and operation. The device's wide operating temperature range of -55°C to 150°C further enhances its versatility for various industrial and consumer applications.
Alternative Models
●NTS4001N: Similar to the NTS4001NT1G but may differ in packaging options.
● NVS4001N: An AEC-Q101 qualified variant with similar specifications, suitable for automotive applications.
● 2N7002W: A small signal MOSFET with a higher drain-source voltage (60V) and higher continuous drain current (340mA), offering greater flexibility in higher voltage applications.
The NTS4001NT1G is a single N-channel small signal MOSFET designed by ON Semiconductor. It features a maximum drain-source voltage of 30V and a continuous drain current of 270mA, making it suitable for a variety of low-power applications. The device is packaged in a compact SC-70 (SOT-323) form factor, which is 30% smaller than a TSOP package. It is also AEC-Q101 qualified and PPAP capable, ensuring high reliability for automotive and industrial applications.
Features
The NTS4001NT1G offers several key features that enhance its performance and versatility. It has a low gate charge, which enables fast switching capabilities, making it ideal for applications requiring high efficiency and minimal switching losses. The device also features ESD protection on the gate to prevent damage during handling and assembly. Additionally, it has a typical input capacitance of 33pF at 5V, ensuring minimal impact on high-frequency circuits. Its drain-source on-state resistance (Rds(on)) is 1.5Ω at 4V and 10mA, providing efficient current handling capabilities.
Applications
The NTS4001NT1G is widely used in applications that require efficient power switching and small form factors. It is commonly found in low-side load switches, where its ability to handle high current pulses and low on-state resistance ensures reliable operation. It is also used in lithium-ion battery-powered devices, such as smartphones, PDAs, and digital cameras, where its compact size and low power consumption are critical. Additionally, it is suitable for buck converters and level-shifting applications, where its fast switching capabilities and low gate charge contribute to high efficiency.
AEC-Q101qualified MOSFET Selection Advantages
Choosing the NTS4001NT1G provides several advantages. Its small SC-70 package allows for integration into space-constrained designs, while its AEC-Q101 qualification ensures reliability in demanding environments. The low gate charge and fast switching capabilities make it an excellent choice for applications requiring high efficiency and minimal power loss. Additionally, its ESD-protected gate reduces the risk of damage during manufacturing and operation. The device's wide operating temperature range of -55°C to 150°C further enhances its versatility for various industrial and consumer applications.
Alternative Models
●NTS4001N: Similar to the NTS4001NT1G but may differ in packaging options.
● NVS4001N: An AEC-Q101 qualified variant with similar specifications, suitable for automotive applications.
● 2N7002W: A small signal MOSFET with a higher drain-source voltage (60V) and higher continuous drain current (340mA), offering greater flexibility in higher voltage applications.
