Model No: NTMFS5C426NT1G
onsemi NTMFS5C426NT1G
Manufacturer: onsemi
SEMICON NO.: NTMFS5C426NT1G
Package: DFN-5
Stock: In stock
Description: N Channel 40V 41A 235A 3.8W 128W
SEMICON NO.: NTMFS5C426NT1G
Package: DFN-5
Stock: In stock
Description: N Channel 40V 41A 235A 3.8W 128W
Quantity :
| Mfr | onsemi |
| Device Type | Single N-Channel Power MOSFET |
| Technology | MOSFET (Metal Oxide) |
| Drain-Source Voltage | 40 V |
| Continuous Drain Current | 235 A, 41 A |
| Pulsed Drain Current | 900 A |
| Power Dissipation | 128 W, 3.8 W |
| Gate-Source Voltage | ±20 V |
| Input Capacitance | 4300 pF (Typ) |
| Output Capacitance | 2100 pF |
| Reverse Transfer Capacitance | 59 pF |
| Operating Temperature | -55°C to +175°C |
| Package | DFN-5 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
NTMFS5C426NT1G is an N‑channel trench power MOSFET manufactured by onsemi, featuring 40 V drain‑source breakdown voltage and 235 A continuous drain‑current under cooled condition with ultra‑low 1.3 mΩ maximum on‑resistance. Delivered in tape‑and‑reel 5‑DFN (5 mm × 6 mm) surface‑mount package, this high‑density power switch carries 128 W power dissipation capability, optimized gate‑charge parameters for reduced switching loss, and wide junction temperature range from ‑55 °C to 175 °C, well suited for high‑current, high‑efficiency DC‑DC converters, synchronous rectification circuits and motor‑drive power stages inside compact power‑dense hardware designsonsemi.
Key Features
● N‑channel enhancement‑mode power MOSFET with 40 V Vds rating, ideal for 12 V‑24 V low‑voltage bus power conversion applications.
● 235 A continuous drain‑current at 25 °C case temperature and maximum 128 W power dissipation with sufficient thermal cooling.
● Ultra‑low maximum Rds(on) of 1.3 mΩ at 10 V gate drive, drastically cutting conduction losses for heavy‑load circuits.
● Optimized low 65 nC total gate charge reduces driver power consumption and switching heat loss during high‑frequency operation.
● Low input and output parasitic capacitance parameters improve transient response and lower high‑frequency switching noise.
● Wide operating junction temperature from ‑55 °C to 175 °C delivers stable performance under harsh industrial thermal conditions.
FAQ
Q: Why is low Rds(on) critical for this MOSFET?
A: It greatly reduces I²R conduction heat loss when high current flows, improving overall system energy efficiency.
Q: What recommended gate‑drive voltage should be used?
A: 10 V gate‑source voltage is required to achieve the specified minimum on‑resistance value.
Q: What PCB layout precautions are needed?
A: Use wide, short copper traces on high‑current loops, add thermal vias under the exposed thermal pad, and fit a small gate resistor to suppress high‑frequency oscillation.
Alternative MOSFET Models
● NVMFS5C426NT1G: Pin‑compatible automotive‑grade 40 V, 235 A MOSFET with identical electrical parameters, suitable for vehicle‑borne power conversion designs.
● NTMFS5C410NT1G: 40 V N‑channel DFN power MOSFET with slightly higher on‑resistance, a cost‑effective downgrade option for lower‑current projects.
● BSC014N04LS: Infineon 40 V ultra‑low‑resistance power MOSFET in a comparable DFN package, serving as cross‑brand functional replacement for high‑current switching circuits.
Key Features
● N‑channel enhancement‑mode power MOSFET with 40 V Vds rating, ideal for 12 V‑24 V low‑voltage bus power conversion applications.
● 235 A continuous drain‑current at 25 °C case temperature and maximum 128 W power dissipation with sufficient thermal cooling.
● Ultra‑low maximum Rds(on) of 1.3 mΩ at 10 V gate drive, drastically cutting conduction losses for heavy‑load circuits.
● Optimized low 65 nC total gate charge reduces driver power consumption and switching heat loss during high‑frequency operation.
● Low input and output parasitic capacitance parameters improve transient response and lower high‑frequency switching noise.
● Wide operating junction temperature from ‑55 °C to 175 °C delivers stable performance under harsh industrial thermal conditions.
FAQ
Q: Why is low Rds(on) critical for this MOSFET?
A: It greatly reduces I²R conduction heat loss when high current flows, improving overall system energy efficiency.
Q: What recommended gate‑drive voltage should be used?
A: 10 V gate‑source voltage is required to achieve the specified minimum on‑resistance value.
Q: What PCB layout precautions are needed?
A: Use wide, short copper traces on high‑current loops, add thermal vias under the exposed thermal pad, and fit a small gate resistor to suppress high‑frequency oscillation.
Alternative MOSFET Models
● NVMFS5C426NT1G: Pin‑compatible automotive‑grade 40 V, 235 A MOSFET with identical electrical parameters, suitable for vehicle‑borne power conversion designs.
● NTMFS5C410NT1G: 40 V N‑channel DFN power MOSFET with slightly higher on‑resistance, a cost‑effective downgrade option for lower‑current projects.
● BSC014N04LS: Infineon 40 V ultra‑low‑resistance power MOSFET in a comparable DFN package, serving as cross‑brand functional replacement for high‑current switching circuits.
