Model No: NTJD4152PT1G
onsemi NTJD4152PT1G
Manufacturer: onsemi
SEMICON NO.: NTJD4152PT1G
Package: SC-88/SC70-6/SOT-363
Stock: In stock
Description: MOSFET Array 20V 880mA 272mW
SEMICON NO.: NTJD4152PT1G
Package: SC-88/SC70-6/SOT-363
Stock: In stock
Description: MOSFET Array 20V 880mA 272mW
Quantity :
| Mfr | onsemi |
| Device Type | Dual P-Channel Small Signal MOSFET |
| Technology | Trench MOSFET |
| Drain-Source Voltage | -20 V |
| Gate-Source Voltage | ±12 V |
| Continuous Drain Current | -0.88 A @ 25°C |
| Pulsed Drain Current | -2.2 A |
| Power Dissipation | 272 mW @ 25°C |
| Power Dissipation (Alt) | 280 mW |
| Drain-Source On-Resistance | 260 mΩ (Max) / 215 mΩ (Typ) |
| Gate Threshold Voltage | -1.2 V (Max) @ 250µA |
| Gate Charge | 2.2 nC (Max) / 1.3 nC |
| Input Capacitance | 155 pF (Max) |
| Output Capacitance | 6 pF |
| Operating Temperature | -55°C to +150°C |
| Package | SC-88/SC70-6/SOT-363 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
The NTJD4152PT1G is a dual P-channel trench small-signal MOSFET manufactured by onsemi, featuring a drain-source voltage rating of -20V with a continuous drain current of -0.88A per channel in a compact SC-88 (SOT-363/SC70-6 equivalent) 6-pin surface-mount package. This device incorporates leading trench technology that delivers low RDS(ON) performance of 0.215Ω maximum at VGS = -4.5V, combined with integrated ESD protection on the gate structures for enhanced reliability in demanding applications. The MOSFET operates with logic-level gate drive compatibility, supporting gate-source voltages up to ±12V with a gate threshold voltage range of -0.45V to -1.2V, enabling direct interface with modern low-voltage microcontrollers and battery-powered circuits.
Feature Highlights
● Dual P-Channel Configuration: Integrates two independent P-channel MOSFETs in a single SC-88 package, enabling compact implementation of complementary switching circuits, bridge configurations, and dual-channel load switches while reducing component count and board space requirements.
● Leading Trench Technology: Advanced trench construction achieves RDS(ON) of 0.215Ω maximum at VGS = -4.5V, minimizing conduction losses and improving efficiency in power switching applications compared to planar MOSFET alternatives.
● ESD Protected Gate: Integrated electrostatic discharge protection on gate structures provides robust handling reliability during assembly and operation, reducing sensitivity to ESD events that could damage conventional unprotected MOSFETs.
● Logic-Level Gate Drive: Gate threshold voltage range of -0.45V to -1.2V enables direct drive from 2.5V and 3.3V logic circuits without requiring level-shifting circuitry or charge pumps, simplifying design in battery-powered applications.
● Low Gate Charge: Total gate charge of only 2.2nC at VGS = 4.5V enables fast switching speeds with minimal drive power requirements, reducing switching losses and supporting high-frequency PWM operation in power management circuits.
FAQ
Q: What is the key advantage of the dual P-channel configuration in a single package?
A:The dual-channel integration enables implementation of bridge circuits, complementary switching topologies, and dual load switches in minimal board space, reducing component count by approximately 50% compared to discrete single-channel solutions while ensuring matched thermal characteristics between channels.
Alternative MOSFET array Models
● SI1913EDH: This dual P-channel 20V TrenchFET MOSFET offers equivalent electrical specifications in the same SOT-363 package with halogen-free construction, providing a direct cross-platform alternative for space-constrained power management applications.
● SI6913DN: This dual P-channel MOSFET delivers higher current capability with 4.9A continuous rating and lower RDS(ON) of 16mΩ in compact packaging, suitable for more demanding load switching applications requiring increased power handling.
● NTHD4102PT1G: This dual P-channel device provides higher current capability of -2.9A with the same -20V voltage rating in similar packaging, offering enhanced power handling for applications exceeding the NTJD4152P current limits.
● Dual P-Channel Configuration: Integrates two independent P-channel MOSFETs in a single SC-88 package, enabling compact implementation of complementary switching circuits, bridge configurations, and dual-channel load switches while reducing component count and board space requirements.
● Leading Trench Technology: Advanced trench construction achieves RDS(ON) of 0.215Ω maximum at VGS = -4.5V, minimizing conduction losses and improving efficiency in power switching applications compared to planar MOSFET alternatives.
● ESD Protected Gate: Integrated electrostatic discharge protection on gate structures provides robust handling reliability during assembly and operation, reducing sensitivity to ESD events that could damage conventional unprotected MOSFETs.
● Logic-Level Gate Drive: Gate threshold voltage range of -0.45V to -1.2V enables direct drive from 2.5V and 3.3V logic circuits without requiring level-shifting circuitry or charge pumps, simplifying design in battery-powered applications.
● Low Gate Charge: Total gate charge of only 2.2nC at VGS = 4.5V enables fast switching speeds with minimal drive power requirements, reducing switching losses and supporting high-frequency PWM operation in power management circuits.
FAQ
Q: What is the key advantage of the dual P-channel configuration in a single package?
A:The dual-channel integration enables implementation of bridge circuits, complementary switching topologies, and dual load switches in minimal board space, reducing component count by approximately 50% compared to discrete single-channel solutions while ensuring matched thermal characteristics between channels.
Alternative MOSFET array Models
● SI1913EDH: This dual P-channel 20V TrenchFET MOSFET offers equivalent electrical specifications in the same SOT-363 package with halogen-free construction, providing a direct cross-platform alternative for space-constrained power management applications.
● SI6913DN: This dual P-channel MOSFET delivers higher current capability with 4.9A continuous rating and lower RDS(ON) of 16mΩ in compact packaging, suitable for more demanding load switching applications requiring increased power handling.
● NTHD4102PT1G: This dual P-channel device provides higher current capability of -2.9A with the same -20V voltage rating in similar packaging, offering enhanced power handling for applications exceeding the NTJD4152P current limits.
