Model No: FDMA908PZ
onsemi FDMA908PZ
Manufacturer: onsemi
SEMICON NO.: FDMA908PZ
Package: 6-WDFN
Stock: In stock
Description: Single MOSFET -12V -12A 12.5mΩ
SEMICON NO.: FDMA908PZ
Package: 6-WDFN
Stock: In stock
Description: Single MOSFET -12V -12A 12.5mΩ
Quantity :
| Mfr | onsemi |
| Device Type | Single P-Channel PowerTrench® MOSFET |
| Drain-Source Voltage | -12 V |
| Gate-Source Voltage | ±8 V |
| Continuous Drain Current | -12 A @ 25°C |
| Pulsed Drain Current | -40 A |
| Power Dissipation | 2.4 W @ 25°C |
| Gate Threshold Voltage | 1 V (Max) @ 250 µA |
| Gate Charge | 8.6 nC @4.5 V |
| Input Capacitance | 3957 pF @6V |
| Output Capacitance | 480 pF |
| Reverse Transfer Capacitance | 146 pF |
Quiescent Gate Charge | 1.3 nC (Typ) |
| Operating Temperature | -55°C to +150°C |
| Package | 6-WDFN |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
The FDMA908PZ is a high-performance P-channel PowerTrench MOSFET manufactured by onsemi (formerly ON Semiconductor), featuring a drain-source voltage rating of -12V with a continuous drain current of -12A in a compact 6-pin MicroFET 2x2 surface-mount package. This device employs advanced PowerTrench technology that delivers exceptionally low RDS(ON) performance of just 12.5mΩ, specifically optimized for battery charge and load switching applications. The MOSFET operates with a maximum gate threshold voltage of 600mV and supports gate-source voltages from -8V to +8V, enabling direct interface with modern low-voltage logic circuits. Specified across an operating temperature range up to +150°C with power dissipation of 2.4W, the component measures just 2.05mm × 2.05mm, providing space-efficient implementation for high-density portable electronic designs.
Applications
The FDMA908PZ serves critical power management functions across multiple industries and applications. In battery charging circuits, it functions as a high-side power switch for charge path control, reverse polarity protection, and power path management in single-cell lithium-ion battery systems. Portable electronics including smartphones, tablets, and wearable devices utilize this MOSFET for load switching and power distribution, enabling selective subsystem activation for battery conservation. DC-DC converter designs leverage its low RDS(ON) and PowerTrench construction for synchronous rectification in point-of-load regulation applications where efficiency directly impacts battery life. Additionally, notebook computers, ultrabooks, and tablets employ this component for battery disconnect functions and power multiplexing, while general-purpose industrial equipment benefits from its robust construction and reliable switching characteristics for power routing and protection circuits.
FAQ
Q: What is the key advantage of the ultra-low 12.5mΩ RDS(ON) specification?
A: The exceptionally low on-state resistance minimizes conduction losses during current flow, directly translating to improved efficiency and reduced heat generation, which is critical for battery-powered applications where thermal management and energy conservation directly impact device performance and user experience.
Q: What layout considerations apply when using this MOSFET in high-current applications?
A: The MicroFET 2x2 package requires adequate PCB copper area for heat dissipation, with multiple vias connecting the drain pads to internal ground planes recommended to maintain junction temperatures within specification while supporting the full 12A continuous current rating in space-constrained designs.
Alternative MOSFET Models
● Vishay SI4435DDY: This P-channel TrenchFET MOSFET offers -30V drain-source voltage with -9.4A current rating and 22mΩ RDS(ON) in SO-8 package, providing higher voltage margin for more demanding applications requiring increased blocking capability.
● Infineon BSC014N06NS: This advanced OptiMOS P-channel MOSFET delivers -60V voltage rating with exceptional efficiency in a compact package, offering superior performance for higher-voltage industrial and automotive power management systems.
● Alpha & Omega AO4435: This P-channel MOSFET provides -30V drain-source voltage with -10A continuous current and low RDS(ON) in SO-8 package, delivering proven reliability for battery management and load switching in portable applications.
Applications
The FDMA908PZ serves critical power management functions across multiple industries and applications. In battery charging circuits, it functions as a high-side power switch for charge path control, reverse polarity protection, and power path management in single-cell lithium-ion battery systems. Portable electronics including smartphones, tablets, and wearable devices utilize this MOSFET for load switching and power distribution, enabling selective subsystem activation for battery conservation. DC-DC converter designs leverage its low RDS(ON) and PowerTrench construction for synchronous rectification in point-of-load regulation applications where efficiency directly impacts battery life. Additionally, notebook computers, ultrabooks, and tablets employ this component for battery disconnect functions and power multiplexing, while general-purpose industrial equipment benefits from its robust construction and reliable switching characteristics for power routing and protection circuits.
FAQ
Q: What is the key advantage of the ultra-low 12.5mΩ RDS(ON) specification?
A: The exceptionally low on-state resistance minimizes conduction losses during current flow, directly translating to improved efficiency and reduced heat generation, which is critical for battery-powered applications where thermal management and energy conservation directly impact device performance and user experience.
Q: What layout considerations apply when using this MOSFET in high-current applications?
A: The MicroFET 2x2 package requires adequate PCB copper area for heat dissipation, with multiple vias connecting the drain pads to internal ground planes recommended to maintain junction temperatures within specification while supporting the full 12A continuous current rating in space-constrained designs.
Alternative MOSFET Models
● Vishay SI4435DDY: This P-channel TrenchFET MOSFET offers -30V drain-source voltage with -9.4A current rating and 22mΩ RDS(ON) in SO-8 package, providing higher voltage margin for more demanding applications requiring increased blocking capability.
● Infineon BSC014N06NS: This advanced OptiMOS P-channel MOSFET delivers -60V voltage rating with exceptional efficiency in a compact package, offering superior performance for higher-voltage industrial and automotive power management systems.
● Alpha & Omega AO4435: This P-channel MOSFET provides -30V drain-source voltage with -10A continuous current and low RDS(ON) in SO-8 package, delivering proven reliability for battery management and load switching in portable applications.
