Model No: NSV40200LT1G
onsemi NSV40200LT1G
Manufacturer: onsemi
SEMICON NO: NSV40200LT1G
Package: SOT-23-3
Stock: In stock
Description: Bipolar (BJT) Transistor PNP 40V 2A 100MHz
SEMICON NO: NSV40200LT1G
Package: SOT-23-3
Stock: In stock
Description: Bipolar (BJT) Transistor PNP 40V 2A 100MHz
Quantity :
| Manufacturer | onsemi |
| Part Number | NSV40200LT1G |
| Type | Dual N-Channel MOSFET |
| Voltage Rating (VDSS) | 20 V |
| Current Rating (ID) | 4.7 A (per MOSFET) |
| RDS(ON) (max) | 28 mΩ (VGS = 4.5 V) |
| Gate Threshold (VGS(th)) | 0.5 V (min) – 1.5 V (max) |
| Input Capacitance (Ciss) | 350 pF (typ) |
| Power Dissipation (PD) | 2 W (max) |
| Operating Temperature | -55°C to +150°C |
| Package | SOT-23-3 |
NSV40200LT1G: ON Semiconductor PNP transistor
The NSV40200LT1G is a 40V, 2A PNP transistorfromonsemi, featuring a low saturation voltage (VCE(sat)) and high current gain capability. It belongs to the e2PowerEdge family and is designed for surface-mount applications where efficient energy control is crucial. This transistor is packaged in a compact SOT-23 form factor, making it suitable for a variety of electronic devices.
NSV40200LT1G Low VCE(sat) transistor Features
The NSV40200LT1G transistor is characterized by its ultra-low saturation voltage, which ensures high efficiency in power management applications. It has a transition frequency of 100MHz, allowing it to be used in high-speed switching applications. Additionally, it is RoHS compliant, meeting environmental and safety standards.
NSV40200LT1G Applications
This transistor is widely used in DC-DC converters and power management systems, particularly in portable and battery-powered devices such as cellular phones, PDAs, computers, printers, digital cameras, and MP3 players. It is also utilized in low-voltage motor controls for mass storage products like disc drives and tape drives. In the automotive industry, it can be applied in airbag deployment systems and instrument panels.
Advantages of Choosing NSV40200LT1G
Selecting the NSV40200LT1G offers several advantages. Its low saturation voltage ensures minimal power loss and high energy efficiency, making it ideal for battery-operated devices. The high current gain capability allows for effective control of larger currents with a smaller input signal. Additionally, its compact SOT-23 package saves space on printed circuit boards, making it suitable for modern, space-constrained designs.
The NSV40200LT1G is a 40V, 2A PNP transistorfromonsemi, featuring a low saturation voltage (VCE(sat)) and high current gain capability. It belongs to the e2PowerEdge family and is designed for surface-mount applications where efficient energy control is crucial. This transistor is packaged in a compact SOT-23 form factor, making it suitable for a variety of electronic devices.
NSV40200LT1G Low VCE(sat) transistor Features
The NSV40200LT1G transistor is characterized by its ultra-low saturation voltage, which ensures high efficiency in power management applications. It has a transition frequency of 100MHz, allowing it to be used in high-speed switching applications. Additionally, it is RoHS compliant, meeting environmental and safety standards.
NSV40200LT1G Applications
This transistor is widely used in DC-DC converters and power management systems, particularly in portable and battery-powered devices such as cellular phones, PDAs, computers, printers, digital cameras, and MP3 players. It is also utilized in low-voltage motor controls for mass storage products like disc drives and tape drives. In the automotive industry, it can be applied in airbag deployment systems and instrument panels.
Advantages of Choosing NSV40200LT1G
Selecting the NSV40200LT1G offers several advantages. Its low saturation voltage ensures minimal power loss and high energy efficiency, making it ideal for battery-operated devices. The high current gain capability allows for effective control of larger currents with a smaller input signal. Additionally, its compact SOT-23 package saves space on printed circuit boards, making it suitable for modern, space-constrained designs.