Model No: FDS6681Z
onsemi FDS6681Z
Manufacturer: onsemi
SEMICON NO.: FDS6681Z
Package: 8-SOIC
Stock: In stock
Description: P-Channel MOSFET -30V -20A 4.6mΩ
SEMICON NO.: FDS6681Z
Package: 8-SOIC
Stock: In stock
Description: P-Channel MOSFET -30V -20A 4.6mΩ
Quantity :
| Mfr | onsemi |
| Device Type | P-Channel Enhancement Mode Power MOSFET |
| Drain-Source Voltage (Max) | -30 V |
| Gate-Source Voltage (Max) | ±25 V |
| Continuous Drain Current (Max) | -20 A |
| Power Dissipation (Max) | 2.5 W |
| Drain-Source On-Resistance (Max) | 4.6 mΩ |
| Gate Threshold Voltage (Max) | -3 V |
| Gate Charge (Typ) | 12 nC |
| Input Capacitance (Typ) | 7540 pF |
| Reverse Transfer Capacitance (Typ) | 327 pF |
| Operating Temperature | -55°C to +150°C |
| Package | 8-SOIC |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
The FDS6681Z is a -30 V, -20 A P-Channel PowerTrench MOSFET from onsemi (formerly Fairchild Semiconductor), built on an advanced trench process specifically tailored to minimize on-state resistance in power management and load-switching circuits. This P-channel enhancement-mode device delivers an exceptionally low RDS(ON) of just 4.6 mΩ at VGS = -10 V and 6.5 mΩ at VGS = -4.5 V, packaged in a compact SOIC-8. With an extended ±25 V gate-source range for battery applications, 8-kV typical HBM ESD protection, and a wide -55°C to +150°C junction temperature range, this RoHS-compliant, halide-free power transistor is engineered for high-side switching and efficient power delivery in notebook computers, portable battery packs, and general-purpose DC-DC conversion systems.
Application Scenarios
● Notebook and laptop computers: high-side load switching and power-rail gating in battery-powered portable systems where minimal conduction loss extends runtime.
● Portable battery packs and power banks: battery protection circuits and high-current switching paths that benefit from the extended gate voltage range and low RDS(ON).
● DC-DC converters and switching power supplies: synchronous buck/boost stages in point-of-load regulators and mid-power architectures.
● Motor control and audio amplifiers: P-channel high-side drive stages for H-bridge and Class-D topologies requiring clean switching performance.
● General power management: load switches, reverse-polarity protection, and hot-swap controllers across industrial and consumer platforms.
FAQ
Q: What is the RDS(ON) of the FDS6681Z at logic-level gate drive? A: The on-resistance is 6.5 mΩ maximum at VGS = -4.5 V, making it suitable for 5 V gate-drive circuits without full enhancement.
Q: Can it handle ESD events during assembly? A: Yes, the integrated gate-to-source diode provides 8 kV typical HBM ESD protection, though no gate overvoltage rating beyond ±25 V is implied.
Alternative MOSFET Models
● FDS6680AS: A dual N-channel counterpart in the same PowerTrench family, optimized for synchronous rectification stages that pair with P-channel high-side switches.
● SI4459ADY-T1-GE3: Vishay's TrenchFET P-channel MOSFET in SOIC-8 with comparable -30 V/-20 A ratings and low gate charge for similar load-switch roles.
● IRF9310TRPBF: Infineon's -30 V P-channel MOSFET in SOIC-8 offering equivalent voltage and current capability with strong thermal performance.
● FDS6690A: A higher-current N-channel PowerTrench alternative in the same family for low-side switching topologies up to -25 A.
Application Scenarios
● Notebook and laptop computers: high-side load switching and power-rail gating in battery-powered portable systems where minimal conduction loss extends runtime.
● Portable battery packs and power banks: battery protection circuits and high-current switching paths that benefit from the extended gate voltage range and low RDS(ON).
● DC-DC converters and switching power supplies: synchronous buck/boost stages in point-of-load regulators and mid-power architectures.
● Motor control and audio amplifiers: P-channel high-side drive stages for H-bridge and Class-D topologies requiring clean switching performance.
● General power management: load switches, reverse-polarity protection, and hot-swap controllers across industrial and consumer platforms.
FAQ
Q: What is the RDS(ON) of the FDS6681Z at logic-level gate drive? A: The on-resistance is 6.5 mΩ maximum at VGS = -4.5 V, making it suitable for 5 V gate-drive circuits without full enhancement.
Q: Can it handle ESD events during assembly? A: Yes, the integrated gate-to-source diode provides 8 kV typical HBM ESD protection, though no gate overvoltage rating beyond ±25 V is implied.
Alternative MOSFET Models
● FDS6680AS: A dual N-channel counterpart in the same PowerTrench family, optimized for synchronous rectification stages that pair with P-channel high-side switches.
● SI4459ADY-T1-GE3: Vishay's TrenchFET P-channel MOSFET in SOIC-8 with comparable -30 V/-20 A ratings and low gate charge for similar load-switch roles.
● IRF9310TRPBF: Infineon's -30 V P-channel MOSFET in SOIC-8 offering equivalent voltage and current capability with strong thermal performance.
● FDS6690A: A higher-current N-channel PowerTrench alternative in the same family for low-side switching topologies up to -25 A.
