Model No: IRFH7084TRPBF
Infineon Technologies IRFH7084TRPBF
Manufacturer: Infineon Technologies
SEMICON NO.: IRFH7084TRPBF
Package: 8-PQFN
Stock: In stock
Description: MOSFET N-CH Single FET 40V 100A
SEMICON NO.: IRFH7084TRPBF
Package: 8-PQFN
Stock: In stock
Description: MOSFET N-CH Single FET 40V 100A
Quantity :
| Mfr | Infineon Technologies |
| Device Type | Single N-Channel Power MOSFET |
| Drain-Source Voltage (Max) | 40 V |
| Continuous Drain Current (Max) | 100 A |
| Power Dissipation (Max) | 156 W |
| Gate-Source Voltage (Max) | ±20 V |
| Drain-Source On-Resistance (Max) | 1.25 mΩ |
| Gate Threshold Voltage (Max) | 3.9 V @ 150 µA |
| Gate Charge | 190 nC |
| Input Capacitance | 6560 pF |
| Drive Voltage | 10 V |
| Operating Temperature | –55°C to +150°C |
| Package | 8-PQFN |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
The IRFH7084TRPBF is a 40 V, 100 A N-channel StrongIRFET™ power MOSFET from Infineon Technologies, engineered to deliver ultra-low on-state resistance and exceptional current capability in high-power, low-frequency switching applications. This silicon MOSFET features an outstanding typical RDS(on) of just 0.95 mΩ (maximum 1.25 mΩ at VGS = 10 V) while supporting an impressive 265 A continuous drain current at 25°C case temperature, all housed in a compact PQFN 5 × 6 mm surface-mount package. As part of Infineon's StrongIRFET family optimized for extreme current handling and ruggedness, this 40V power MOSFET provides enhanced gate, avalanche, and dynamic dV/dt ruggedness along with fully characterized capacitance and avalanche SOA, making it a reliable workhorse for high-current DC-DC converters, motor drives, and power management systems.
Application Scenarios
● DC-DC converters and switching power supplies: serving as the primary switching element in synchronous buck/boost topologies for server power and telecom infrastructure.
● Battery management systems (BMS): high-current battery pack switching and protection circuits in electric vehicles and energy storage systems.
● Motor drives and DC drives: driving brushed and brushless DC motors in power tools, industrial automation, and robotics applications.
● Half-bridge and full-bridge topologies: power stage implementation in inverters and Class-D audio amplifiers requiring minimal conduction loss.
● DC-AC inverters: solar micro-inverters and UPS systems where efficiency and thermal performance are critical.
FAQ
Q: What is the RDS(on) of the IRFH7084TRPBF at logic-level gate drive? A: The device achieves 0.95 mΩ typical at VGS = 10 V, making it fully enhanced at standard 10 V gate drive levels.
Q: What is the maximum gate-source voltage? A: VGS is rated at ±20 V maximum, compatible with standard gate driver ICs.
Alternative N-channel MOSFET Models
1. IRFH7446TRPBF: Infineon's 40 V, 85 A StrongIRFET alternative in the same PQFN 5 × 6 package with slightly higher RDS(on) but good current capability.
2. IRFH7440TRPBF: A 40 V StrongIRFET variant in the same family offering balanced RDS(on) and gate charge for mid-power switching designs.
3. BSC093N04LS6: Infineon's OptiMOS™ 40 V N-channel MOSFET in SuperSO8 with comparable low on-resistance for high-efficiency applications.
4. AON6264E: Alpha & Omega Semiconductor's 40 V N-channel MOSFET with similar current rating in a compact DFN 5 × 6 package.
Application Scenarios
● DC-DC converters and switching power supplies: serving as the primary switching element in synchronous buck/boost topologies for server power and telecom infrastructure.
● Battery management systems (BMS): high-current battery pack switching and protection circuits in electric vehicles and energy storage systems.
● Motor drives and DC drives: driving brushed and brushless DC motors in power tools, industrial automation, and robotics applications.
● Half-bridge and full-bridge topologies: power stage implementation in inverters and Class-D audio amplifiers requiring minimal conduction loss.
● DC-AC inverters: solar micro-inverters and UPS systems where efficiency and thermal performance are critical.
FAQ
Q: What is the RDS(on) of the IRFH7084TRPBF at logic-level gate drive? A: The device achieves 0.95 mΩ typical at VGS = 10 V, making it fully enhanced at standard 10 V gate drive levels.
Q: What is the maximum gate-source voltage? A: VGS is rated at ±20 V maximum, compatible with standard gate driver ICs.
Alternative N-channel MOSFET Models
1. IRFH7446TRPBF: Infineon's 40 V, 85 A StrongIRFET alternative in the same PQFN 5 × 6 package with slightly higher RDS(on) but good current capability.
2. IRFH7440TRPBF: A 40 V StrongIRFET variant in the same family offering balanced RDS(on) and gate charge for mid-power switching designs.
3. BSC093N04LS6: Infineon's OptiMOS™ 40 V N-channel MOSFET in SuperSO8 with comparable low on-resistance for high-efficiency applications.
4. AON6264E: Alpha & Omega Semiconductor's 40 V N-channel MOSFET with similar current rating in a compact DFN 5 × 6 package.
