Model No: FDPF18N50
onsemi FDPF18N50
Manufacturer: onsemi
SEMICON NO.: FDPF18N50
Package: TO-220-3
Stock: In stock
Description: MOSFET UniFET 500 V 18A 38.5W
SEMICON NO.: FDPF18N50
Package: TO-220-3
Stock: In stock
Description: MOSFET UniFET 500 V 18A 38.5W
Quantity :
| Mfr | onsemi |
| Device Type | N-Channel Enhancement Mode Power MOSFET |
| Product Family | UniFET™ |
| Drain-Source Voltage (Max) | 500 V |
| Continuous Drain Current (Max) @ 25°C | 18 A |
| Power Dissipation (Max) 25°C | 38.5 W |
| Gate-Source Voltage (Max) | ±30 V |
| Drain-Source On-Resistance | 265 mΩ (Max) |
| Gate Threshold Voltageax | 5 V (Max) |
| Total Gate Charge (Typ / Max) | 45 nC (Typ) / 60 nC (Max) |
| Input Capacitance | 2860 pF (Max) |
| Output Capacitance | 330 pF (Typ) |
| Reverse Transfer Capacitanc | 25 pF (Typ) |
| Operating Temperature | –55°C to +150°C |
| Package | TO-220-3 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
FDPF18N50 | UniFET onsemi MOSFET, 500V MOSFET, 18A, TO-220F MOSFET
The FDPF18N50 is an active onsemi UniFET MOSFET, a 500V N-channel MOSFET and 18A power MOSFET built on planar stripe DMOS. It pairs 500 V VDSS, 265 mOhm max RDS(on) at VGS = 10 V, 220 mOhm typical, +/-30 V gate rating and -55 C to +150 C junction range with an isolated TO-220F MOSFET (TO-220F-3, case 221AT). This 265mOhm MOSFET handles 18 A at TC = 25 C, 10.8 A at TC = 100 C, 72 A pulsed and 45 nC Qg, with 100% avalanche tested MOSFET ruggedness. It targets PFC MOSFET, ATX power supply MOSFET, FPD TV, ballast and UPS rails; the TO-220F body removes the live tab for insulated mounting.
Applications
This 500V N-channel MOSFET suits switch-mode converters, active PFC MOSFET circuits, LCD/LED/PDP TV supplies, ATX rails, electronic ballasts, LED lighting, UPS and general high voltage switching. The isolated TO-220F MOSFET mounts to a heatsink without a washer, trading 38.5 W dissipation for simpler assembly and creepage.
FAQ
Q: Gate drive? Use 10 V to 12 V; 3.3 V/5 V logic is insufficient since VGS(th) reaches 5 V.
Q: TO-220F? Molded isolation removes the live tab, yet 3.3 C/W RthetaJC needs heatsinking.
Q: Avalanche? 945 mJ EAS helps, but check SOA, snubbers, VDS spikes and 23.5 mJ repetitive limits.
Q: Gate drive? Use 10 V to 12 V; 3.3 V/5 V logic is insufficient since VGS(th) reaches 5 V.
Q: TO-220F? Molded isolation removes the live tab, yet 3.3 C/W RthetaJC needs heatsinking.
Q: Avalanche? 945 mJ EAS helps, but check SOA, snubbers, VDS spikes and 23.5 mJ repetitive limits.
Alternative Models
1. FDPF20N50T: active 500 V/20 A/230 mOhm UniFET TO-220F upgrade with 45.6 nC Qg for more headroom.
2. FDP18N50: exposed-tab TO-220 with the same ratings, 235 W dissipation and 0.53 C/W RthetaJC.
3. STF19NM50N: ST MDmesh II 500 V/14 A/250 mOhm TO-220FP with 34 nC Qg, needing thermal requalification.
4. IPP50R250CPXKSA1: Infineon CoolMOS 500 V TO-220 cross-reference listed as similar by distributors, needing SOA and gate-charge validation.
1. FDPF20N50T: active 500 V/20 A/230 mOhm UniFET TO-220F upgrade with 45.6 nC Qg for more headroom.
2. FDP18N50: exposed-tab TO-220 with the same ratings, 235 W dissipation and 0.53 C/W RthetaJC.
3. STF19NM50N: ST MDmesh II 500 V/14 A/250 mOhm TO-220FP with 34 nC Qg, needing thermal requalification.
4. IPP50R250CPXKSA1: Infineon CoolMOS 500 V TO-220 cross-reference listed as similar by distributors, needing SOA and gate-charge validation.
